Buch, Englisch, Band 17, 363 Seiten, HC gerader Rücken kaschiert, Format (B × H): 160 mm x 241 mm, Gewicht: 728 g
Buch, Englisch, Band 17, 363 Seiten, HC gerader Rücken kaschiert, Format (B × H): 160 mm x 241 mm, Gewicht: 728 g
Reihe: Lecture Notes in Nanoscale Science and Technology
ISBN: 978-3-319-02020-4
Verlag: Springer International Publishing
- Offers comprehensive coverage of novel nanoscale transistors with quantum confinement effect
- Provides the keys to understanding the emerging area of the quantum FinFET
- Written by leading experts in each research area
- Describes a key enabling technology for research and development of nanofabrication and nanoelectronic devices
Zielgruppe
Physics, Electrical Engineering, and Materials Science departments
Autoren/Hrsg.
Fachgebiete
Weitere Infos & Material
PrefaceChapter 1: Simulation of Quantum Ballistic Transport in FinFETs
Chapter 2: Model for quantum confinement in nanowires and the application of this model to the study of carrier mobility in nanowire FinFETs
Chapter 3: Understanding the FinFET Mobility by Systematic Experiments
Chapter 4: Quantum Mechanical Potential Modeling of FinFET
Chapter 5: Physical insight and correlation analysis of finshape fluctuations and work-function variability in FinFET devices
Chapter 6: Characteristic and Fluctuation of Multi-Fin FinFETs
Chapter 7: Variability in Nanoscale FinFET Technologies
Chapter 8: Random Telegraph Noise in Multi-Gate FinFET/Nanowire Devices and the Impact of Quantum Confinement
Chapter 9: Investigations on Transport Properties of Poly-Silicon Nanowire Transistors Featuring Independent Double-Gated Configuration under Cryogenic Ambient
Chapter 10: Towards Drain extended FinFETs for SoC applications
Chapter 11: Modeling FinFETs for CMOS Applications
Chapter 12: Enhanced Quantum Effects in Room-Temperature Coulomb Blockade Devices Based on Ultrascaled finFET Structure
Chapter 13: Single-Electron Tunneling Transistors Utilizing Individual Dopant Potentials
Chapter 14: Single Electron Transistor and Quantum Dots on Graphene
Chapter 15: Terahertz Response in Schottky Warp-Gate Controlled Single Electron TransistorsIndex