Buch, Englisch, 156 Seiten, Format (B × H): 152 mm x 229 mm, Gewicht: 381 g
A Retrospective from 2021
Buch, Englisch, 156 Seiten, Format (B × H): 152 mm x 229 mm, Gewicht: 381 g
Reihe: Frontiers in Semiconductor Technology
ISBN: 978-1-03-225744-0
Verlag: CRC Press
This book first reviews the development of MOS technology and discusses the potentials of emerging Ge and the challenges facing it as a contentious channel material, once promising to replace Si (silicon) for advanced nodes. The study systematically analyzes the following aspects of GeO2/Ge stacks that will shed light on the characteristics and reaction principles of the system: GeO2/Ge degradation, Ge passivation techniques, desorption kinetics of GeO from GeO2/Ge, the relationship between GeO2 crystallization and GeO2/Ge interface reaction, and the oxidation kinetics of Ge. Based on findings from the intrinsic properties of GeO2/Ge, the author also compares it with prevalent SiO2/Si systems and demonstrates the essential differences between the two, contributing to quality control, process optimization, and technology advancements of GeO2/Ge.
The book will be a useful reference for researchers, professionals, and students interested in electronic materials, condenser matter physics, microelectronic engineering, and semiconductors.
Autoren/Hrsg.
Fachgebiete
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Produktionstechnik Industrielle Qualitätskontrolle
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
- Technische Wissenschaften Energietechnik | Elektrotechnik Elektrotechnik
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Transistoren
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
Weitere Infos & Material
1. Introduction 2. Fabrication and Characterization Methods 3. Desorption Kinetics of GeO from GeO2/Ge 4. Structural Transition Kinetics in GeO2/Ge 5. Oxidations in GeO2/Ge Stack