Weiss / Henisch Structure and Application of Galvanomagnetic Devices

International Series of Monographs on Semiconductors
1. Auflage 2014
ISBN: 978-1-4831-8621-4
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, Band Volume 8, 378 Seiten, Web PDF

Reihe: International Series of Monographs on Semiconductors

International Series of Monographs on Semiconductors, Volume 8: Structure and Application of Galvanomagnetic Devices focuses on the composition, reactions, transformations, and applications of galvanomagnetic devices. The book first ponders on basic physical concepts, design and fabrication of galvanomagnetic devices, and properties of galvanomagnetic devices. Discussions focus on changes in electrical properties on irradiation with high-energy particles, magnetoresistor field-plate, Hall generator, preparation of semiconductor films by vacuum deposition, structure of field-plate magnetoresistors, growth of semiconductors from the melt, and galvanomagnetic materials and effects. The text then elaborates on the applications of the Hall effect and the magnetoresistance effect. Topics include contactless control, connecting the field-plate to other semiconductor devices, non-contacting variable resistance and potentiometer, measurement of magnetic fields and quantities proportional to magnetic fields, and measurement of quantities representable by a magnetic induction. The manuscript underscores other possibilities for controlling the electrical properties of semiconductors by means of a magnetic field. The publication is a vital source of data for researchers wanting to explore the structure and applications of galvanomagnetic devices.

Autoren/Hrsg.

Weiss, H.

Henisch, Heinz K.

Inhaltsverzeichnis

1;Front Cover;1
2;Structure and Application of Galvanomagnetic Devices;4
3;Copyright Page;5
4;Table of Contents;6
5;PREFACE;10
6;LIST OF SYMBOLS;12
7;INTRODUCTION;16
8;CHAPTER 1. BASIC PHYSICAL CONCEPTS;18
8.1;1.1 The Galvanomagnetic Effects;18
8.2;1.2 Galvanomagnetic Materials;46
9;CHAPTER
2. DESIGN AND FABRICATION OF GALVANOMAGNETIC DEVICES;72
9.1;2.1 Growth of Semiconductors from the Melt;73
9.2;2.2 Preparation of Semiconductor Films by Vacuum Deposition;83
9.3;2.3 Structure of Hall Generators;86
9.4;2.4 Structure of Field-plate Magnetoresistors;94
10;CHAPTER
3. PROPERTIES OF GALVANOMAGNETIC DEVICES;101
10.1;3.1 Hall Generator;101
10.2;3.2 The Magnetoresistor Field-plate;150
10.3;3.3 Changes in Electrical Properties on Irradiation with High-energy Particles;173
11;CHAPTER 4. APPLICATIONS OF THE HALL EFFECT;177
11.1;4.1 Measurement of Magnetic Fields;178
11.2;4.2 Measurement of Quantities Representable by a Magnetic Induction;201
11.3;4.3 Contactless Signal Generation;210
11.4;4.4 Multiplicative Properties of Hall Generators;233
11.5;4.5 Hall Effect Gyrator, Isolator and Circulator;251
12;CHAPTER 5. APPLICATIONS OF THE MAGNETORESISTANCE EFFECT;259
12.1;5.1 Measurement of Magnetic Fields and Quantities Proportional to Magnetic Fields;259
12.2;5.2 Non-contacting Variable Resistance and Potentiometer;277
12.3;5.3 Modulation of Small D.C. Currents and Voltages;291
12.4;5.4 Multiplication;314
12.5;5.5 Connecting the Field-plate to other Semiconductor Devices;326
12.6;5.6 Contactless Control;339
12.7;5.7 Feedback-coupled Field-plate;355
13;CHAPTER 6. OTHER POSSIBILITIES FOR CONTROLLING THE ELECTRICAL PROPERTIES OF SEMICONDUCTORS BY MEANS OF A MAGNETIC FIELD;361
14;REFERENCES;367
15;PARAMETERS OF GALVANOMAGNETIC DEVICES;372
16;INDEX;374