Buch, Englisch, 418 Seiten, Format (B × H): 229 mm x 154 mm, Gewicht: 666 g
Reihe: Woodhead Publishing Series in Electronic and Optical Materials
Materials, Physics, Design, and Applications
Buch, Englisch, 418 Seiten, Format (B × H): 229 mm x 154 mm, Gewicht: 666 g
Reihe: Woodhead Publishing Series in Electronic and Optical Materials
ISBN: 978-0-08-102306-8
Verlag: Elsevier Science & Technology
Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed.
Zielgruppe
<p>Academic and industry researchers in materials science, engineering, and physics</p>
Fachgebiete
Weitere Infos & Material
1. Introduction 2. SiC Material Properties 3. GaN Material Properties 4. SiC Power Device Design and Fabrication 5. GaN-on-Si Power Device Design and Fabrication 6. GaN-on-GaN Power Device Design and Fabrication 7. Gate Drives for WBG devices 8. Packaging WBG devices 9. Applications of GaN devices 10. Applications of SiC devices 11. Synopsys
