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E-Book, Englisch, 254 Seiten, Web PDF

Williams / Hall / Pamplin Luminescence and the Light Emitting Diode

The Basics and Technology of LEDS and the Luminescence Properties of the Materials
1. Auflage 2016
ISBN: 978-1-4832-8021-9
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark

The Basics and Technology of LEDS and the Luminescence Properties of the Materials

E-Book, Englisch, 254 Seiten, Web PDF

ISBN: 978-1-4832-8021-9
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark



Luminescence and the Light Emitting Diode: The Basics and Technology of LEDS and the Luminescence Properties of the Materials focuses on the basic physics and technology of light emitting diodes (LEDS) and pn junction lasers as well as their luminescence properties. Optical processes in semiconductors and the useful devices which can be made are discussed. Comprised of 10 chapters, this book begins with an introduction to the crystal structure and growth, as well as the optical and electrical properties of LED materials. The detailed fabrication of the LED is then considered, along with the luminescence of the material and the diode light emission. Subsequent chapters explore solid-state lasers made from LED materials; the equipment used to measure luminescence, cathodoluminescence, and diode electro-optic characteristics; and luminescence in gallium arsenide, GaAs1-xPx, and gallium phosphide. Other LED materials such as silicon carbide and ternary semiconducting compounds are also surveyed. The text concludes with a brief chapter that describes some of the applications of LEDs and LED products. This monograph will be of value to students and non-graduate engineers with an interest in LEDs.

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Weitere Infos & Material


1;Front Cover;1
2;Luminescence and the Light Emitting Diode: The Basics and Technology of LEDS and the Luminescence Properties of the Materials;4
3;Copyright Page;5
4;Table of Contents;6
5;EDITORS' PREFACE;10
6;AUTHORS' PREFACE;12
7;CHAPTER 1. INTRODUCTION;14
8;CHAPTER 2. INTRODUCING LED CRYSTALS;19
8.1;2.1 Crystal Structure;19
8.2;2.2 Band Structure;24
8.3;2.3 Absorption;31
8.4;2.4 Optical Reflectivity;37
8.5;2.5 Phonon Spectra of Zinc Blende Structures;38
8.6;2.6 Electrical Properties;39
9;CHAPTER 3. CRYSTAL GROWTH;52
9.1;3.1 Introduction;52
9.2;3.2 Phase Diagrams;52
9.3;3.3 Melt Growth;57
9.4;3.4 Vapour Epitaxial Growth;58
9.5;3.5 Solution Epitaxial Growth;59
9.6;3.6 Molecular Beam Epitaxy;61
9.7;3.7 Electron Beam Plasma Technique;62
9.8;3.8 Conclusion;62
10;CHAPTER 4. FABRICATION;66
10.1;4.1 Material;67
10.2;4.2 Photoresist Techniques;68
10.3;4.3 Diffusion;70
10.4;4.4 Ohmic Contacts;74
10.5;4.5 Scribing and Breaking;78
10.6;4.6 Dice Mounting and Wire Bonding;79
10.7;4.7 Encapsulation;81
11;CHAPTER 5. LUMINESCENCE AND EXCITATION PROCESSES;85
11.1;5.1 Radiative Recombination;86
11.2;5.2 Minority Carrier Lifetime;88
11.3;5.3 Recombination via Defect Centres;90
11.4;5.4 Auger Recombination;93
11.5;5.5 BASIC EQUATIONS FOR NON-EQUILIBRIUM CONDITIONS;94
11.6;5.6 Optical Generation;95
11.7;5.7 Electrical Injection;98
11.8;5.8 p-n Junction;99
12;CHAPTER 6. SOLID-STATE LASERS MADE FROM LED MATERIALS;108
12.1;6.1 Criteria for Lasing;108
12.2;6.2 Near- and Far-field Patterns;111
12.3;6.3 Continuous Operation;114
12.4;6.4 Degradation;116
13;CHAPTER 7. MEASUREMENT TECHNIQUES;118
13.1;7.1 Photoluminescence;118
13.2;7.2 Cathodoluminescence;126
13.3;7.3 Capacity Measurements;137
13.4;7.4 Evaluation of Diode Emission;142
14;CHAPTER 8. LUMINESCENCE OF COMMERCIAL LED MATERIALS;155
14.1;8.1 Introduction;155
14.2;8.2 Impurities and Vacancy-impurity Complexes in Gallium Arsenide;155
14.3;8.3 Impurities in Gallium Phosphide;175
14.4;8.4 Gallium Arsenide Phosphide Alloys;182
15;CHAPTER 9. LIGHT-EMITTING DIODE SURVEY;196
15.1;9.1 Introduction;196
15.2;9.2 Electrical Characteristics;196
15.3;9.3 Optical Characteristics;199
15.4;9.4 Gallium Arsenide;203
15.5;9.5 Gallium Phosphide;204
15.6;9.6 Gallium Arsenide Phosphide;208
15.7;9.7 Indium Phosphide;213
15.8;9.8 Other III-V Compounds;214
15.9;9.9 Other III-V Alloy Systems;214
15.10;9.10 Two-photon Phosphor Diodes;216
15.11;9.11 Silicon Carbide Diodes;218
15.12;9.12 Ternary Chalcopyrite Semiconductors;220
15.13;9.13 Conclusion;221
16;CHAPTER 10. APPLICATION OF LED PRODUCTS;228
16.1;10.1 Introduction;228
16.2;10.2 LED Indicator L228
16.3;10.3 Alpha-numeric Displays;233
16.4;10.4 Optically Coupled Devices;238
16.5;10.5 Future Prospects;240
17;AUTHOR INDEX;244
18;SUBJECT INDEX;250



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