Wood / Jena Polarization Effects in Semiconductors

From Ab Initio Theory to Device Applications
1. Auflage 2007
ISBN: 978-0-387-68319-5
Verlag: Springer
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, 515 Seiten

This book presents the latest understanding of the solid physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of hexagonal semiconductors, and the piezo-electric effects in thin film hetero-structures which are used in wide forbidden band gap sensor, electronic and opto-electronic semiconductor devices.

Autoren/Hrsg.

Wood, Colin

Jena, Debdeep

Inhaltsverzeichnis

1;Preface;5
2;Contributors;7
3;Contents;9
4;Theoretical Approach to Polarization Effects in Semiconductors;14
4.1;1 Introduction;14
4.2;2 Basic Electrostatics;15
4.3;3 Polarization;17
4.4;4 Ab Initio Calculations of the Electronic Structure;18
4.5;5 Modern Theory of Polarization;19
4.6;6 Polarization at Interfaces: Interface Dipoles ;23
4.7;7 Spontaneous Polarization in theWurtzite Structure: BeO;25
4.8;8 GaN/AlN Superlattice: Spontaneous Polarization and Piezoelectricity;26
4.9;9 Electric Field-Driven Diffusion and Segregation of Dopants in Superlattices ;29
4.10;10 Summary;36
4.11;References;37
5;Polarization Induced Effects in GaN-based Heterostructures and Novel Sensors;39
5.1;1 Introduction;39
5.2;2 First-Principles Prediction of Structural and Pyroelectric Properties;41
5.3;3 Lattice Constants, Average Bond Length and Bond Angles in Ternary Compounds;42
5.4;4 Polarity;52
5.5;5 Growth of Undoped AlGaN/GaN, InGaN/GaN and AlInN/GaN Hetero- and Nanostructures;53
5.6;6 Non-Linear Spontaneous and Piezoelectric Polarization in Group- III- Nitrides;54
5.7;7 Polarization Induced Surface and Interface Charges;68
5.8;8 Sheet Carrier Concentration of Polarization Induced 2DEGs;73
5.9;9 Sensors Based on Polarization Induced 2DEGs ;86
5.10;10 Summary;112
5.11;References;115
6;Lateral and Vertical Charge Transport in Polar Nitride Heterostructures:;122
6.1;1 Polar Heterostructures: What Do They Offer?;122
6.2;2 Theoretical Approach;128
6.3;3 Tailoring of Vertical Junctions;139
6.4;4 Nitride HFETS: Transport Issues;145
6.5;5 Smart HFETs: Multi-Functional Devices;153
6.6;6 Conclusions;165
6.7;References;165
7;Polarization Effects on Low-Field Transport & Mobility in III- V Nitride HEMTs;171
7.1;1 Introduction;171
7.2;2 Polarization-Induced 2DEGs in AlGaN/GaN HEMTs;173
7.3;3 Scattering Mechanisms ;181
7.4;4 Using Theory to Explain Experimental Data;204
7.5;5 Summary and Conclusions;208
7.6;6 Appendix on the Theory of Low-Field Transport & Mobility;208
7.7;References;224
8;Local Polarization Effects in Nitride Heterostructures and Devices;227
8.1;1 Introduction ;227
8.2;2 Polarization-Based Engineering of Nitride Heterostructures;235
8.3;3 Localized Effects of Polarization;253
8.4;References;270
9;Polarization inWide Bandgap Semiconductors and their Characterization by Scanning Probe Microscopy;275
9.1;1 Introduction;275
9.2;2 III-N and SiC Heterostructures;279
9.3;3 Interface and Surface Charge in SiC and III-N Heterojunctions;284
9.4;4 SPM Characterization of Heterostructures;295
9.5;5 Summary;312
9.6;References;313
10;Functionally Graded Polar Heterostuctures: New Materials for Multifunctional Devices;316
10.1;1 Introduction;316
10.2;2 Graded Polar Nitride Semiconductor Heterostructures ;317
10.3;3 Universal Physics of Functionally Graded Ferroelectric and Ferromagnetic Alloys ;354
10.4;4 Summary and Challenges;377
10.5;References;377
11;Polarization in GaN Based Heterostructures and Heterojunction Field Effect Transistors ( HFETs);382
11.1;Introduction;382
11.2;1 Heterojunction Field Effect Transistors (HFETs);385
11.3;2 AlGaN/GaN HFET Performance;433
11.4;References;466
12;Effects of Polarization in Optoelectronic Quantum Structures;476
12.1;1 Introduction;476
12.2;2 Basic Elements of the Theory of Polarization in III-V Nitride Heterostructures;477
12.3;3 Experimental Manifestation of Polarization Fields in Group-III Nitride Based Nanostructures;503
12.4;4 Conclusion;515
12.5;References;516
13;Index;521