Yamada / Ishiwara / Kamijo Laser and Ion Beam Modification of Materials

Proceedings of the Symposium U: Material Synthesis and Modification by Ion Beams and Laser Beams of the 3rd IUMRS International Conference on Advanced Materials, Sunshine City, Ikebukuro, Tokyo, Japan, August 31 - September 4, 1993
1. Auflage 2013
ISBN: 978-1-4831-6404-5
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, 646 Seiten, Web PDF

Laser and Ion Beam Modification of Materials is a compilation of materials from the proceedings of the symposium U: Material Synthesis and Modification by Ion beams and Laser Beams. This collection discusses the founding of the KANSAI Science City in Japan, and the structures, equipment, and research projects of two institutions are discussed pertaining to eV-MeV ion beams. A description of ion beams as used in materials research and in manufacturing processes, along with trends in ion implantation technology in semiconductors, is discussed. Research into ion beams by China and its industrial uses in non-semiconductor area is noted. For industrial applications, developing technology in terms of high speed, large surface modifications and use of high doses is important. Thus, the development of different ion beam approaches is examined. Industrial applications of ion and laser processing are discussed as cluster beams are used in solid state physics and chemistry. Mention is made on a high power discharge pumped solid state physics (ArF) excimer laser as a potential light source for better material processing. Under ion beam material processing is nanofabrication using focused ion beams, important for research work in mesoscopic systems. Progress in the use of ion-beam mixing using kinetic energy of ion-beams to mingle with pre-deposited surface layers of substrate materials has shown promise. Advanced materials researchers and scientists, as well as academicians in the field of nuclear physics, will find this collection helpful.

Autoren/Hrsg.

Yamada, I.

Ishiwara, H.

Kamijo, E.

Inhaltsverzeichnis

1;Front Cover;1
2;Laser and Ion Beam Modification of Materials;4
3;Copyright Page;5
4;Table of Contents;18
5;General Preface;6
6;Conference Organizers;8
7;Co-Sponsors;10
8;Supporting Sponsors;12
9;Contents of Each Volume;14
10;Names of Symposia and Organizing Committees;16
11;SYMPOSIUM U MATERIAL SYNTHESIS AND MODIFICATION BY ION BEAMS AND LASER BEAMS;26
12;PREFACE;28
13;Part 1: Plenary talks;32
13.1;Chapter 1. REVIEW OF ION ENGINEERING CENTER CORPORATIONAND RELATED RESEARCH PROJECTS INION ENGINEERING RESEARCH INSTITUTE CORPORATION;34
13.1.1;l.ION ENGINEERING CENTERCORPORATION (IECC);34
13.1.2;2 . ION ENGINEERINGRESEARCH INSTITUTECORPORATION (IERIC);35
13.1.3;3 . EQUIPMENT;35
13.1.4;4 . PERSPECTIVE OF eV-MeVION BEAMS IN MATERIALSCIENCE;37
13.1.5;5 . SELECTED BIG PROJECTS INPROGRESS;39
13.1.6;ACKNOWLEGEMENT;47
13.1.7;REFERENCES;47
13.2;Chapter 2. Development program for advanced material-processingand machining technology in Japanf;48
13.2.1;1.INTRODUCTION;48
13.2.2;2.HIGH POWER EXCIMER LASER DEVELOPMENT;48
13.2.3;3.HIGH DENSITY ION BEAM DEVELOPMENT;50
13.2.4;4.MATERIAL PROCESSING BY LASER OR IONBEAMS;52
13.2.5;5.ULTRA-PRECISION MACHINING AND OTHERS;53
13.2.6;6.CONCLUSIONS;53
13.2.7;REFERENCES;53
14;Part 2: Prospects for ion/laser processes;54
14.1;Chapter 3. The growth of heterostructures by pulsed laser deposition;56
14.1.1;1. INTRODUCTION;56
14.1.2;3. LSCO/FUSED SILICA;60
14.1.3;REFERENCES;61
14.1.4;4. CONCLUSION;61
14.1.5;5. ACKNOWLEDGMENT;61
14.2;Chapter 4. Ion Beams Past and Present;62
14.2.1;1. INTRODUCTION;62
14.2.2;2. THE DEVELOPMENT OF HEAVY IONACCELERATORS;62
14.2.3;3.THE FUTURE:;66
14.2.4;REFERENCES;71
14.3;Chapter 5. Trends in ion implantation technology of semiconductors;72
14.3.1;1. INTRODUCTION;72
14.3.2;2. CHANNELING IMPLANTS ANDTWO-DIMENSIONAL PROFILES;73
14.3.3;3. INTERACTIONS OF IMPLANTEDDAMAGE WITH OXYGEN AND WITHDOPANTS;75
14.3.4;4. CONCLUSIONS;77
14.3.5;REFERENCES;77
14.4;CHapter 6. ION BEAM RESEARCH IN CHINA;78
14.4.1;Abstract;78
14.4.2;1. Introduction;78
14.4.3;2. Materials synthesis by ion beam;78
14.4.4;3. Surface modification by ionimplantation;80
14.4.5;4. Surface processing by low energy ionbeam;83
14.4.6;5. Applications;83
14.4.7;6.Conclusion;84
14.4.8;References;84
15;Part 3: Large scale ion beam systems;86
15.1;Chapter 7. Development of high current metal ion beams;88
15.1.1;1. INTRODUCTION;88
15.1.2;2. EQUIPMENT DEVELOPMENT;88
15.1.3;3. CONCLUSIONS;91
15.1.4;R E F E R E N C E S;92
15.2;Chapter 8. Development of a high energy large sheet ion beam system and a low energyion beam deposition system;94
15.2.1;1. INTRODUCTION;94
15.2.2;2. SHEET ION BEAM SYSTEM;95
15.2.3;3. LOW ENERGY ION BEAM DEPOSITIONSYSTEM;97
15.2.4;4. CONCLUSION;99
15.2.5;REFERENCES;99
15.3;Chapter 9. Multiple ionized-beams system for high deposition rates;100
15.3.1;1. INTRODUCTION;100
15.3.2;2. EXPERIMENTAL SETUP;101
15.3.3;3. RESULTS AND DISCUSSIONS;102
15.3.4;4. CONCLUSION;104
15.3.5;REFERENCES;104
15.4;Chapter 10. High energy high current ion implantation system using variable energy RFQ*;106
15.4.1;1. INTRODUCTION;106
15.4.2;2. DESIGN OF RFQ ELECTRODES;106
15.4.3;3. ACCELERATION EXPERIMENTS;107
15.4.4;4. DISCUSSION AND CONCLUSION;111
15.4.5;REFERENCES;111
15.5;Chapter 11. Electrostatic Accelerators Facility for Multiple Ion Beam Applications;112
15.5.1;1. Introduction;112
15.5.2;2. Accelerators and beam lines;112
15.5.3;3. The characteristics of experimentalapparatus;114
15.5.4;4. Conclusion;115
15.5.5;Reference;115
15.6;Chapter 12. Experiment of wide energy range control for metal ion beam;116
15.6.1;1. INTRODUCTION;116
15.6.2;2. EXPERIMENTAL APPARATUS;116
15.6.3;3. EXPERIMENTAL METHOD;117
15.6.4;4. EXPERIMENTAL RESULTS;118
15.6.5;5. CONCLUSIONS;119
15.6.6;REFERENCES;119
15.7;Chapter 13. DEVELOPMENT OF A REENTRANT-CAVITY-TYPE ELECTRON CYCLOTRONRESONANCE (ECR) ION SOURCE AND ITS APPLICATIONS FOR MATERIALPROCESSING;120
15.7.1;1.INTRODUCTION;120
15.7.2;2.EXPERIMENT;120
15.7.3;3.RESULTS AND DISCUSSION;121
15.7.4;4.CONCLUSION;122
15.7.5;REFERENCES;122
15.8;Chapter 14. Facilities for in situ ion beam studies in transmission electron microscopes;124
15.8.1;1 . INTRODUCTION;124
15.8.2;2. FACILITIES—OPERATIONAL;124
15.8.3;3. FACILITIES—PROPOSED;126
15.8.4;4. ACKNOWLEDGMENTS;127
15.8.5;REFERENCES;127
15.8.6;FACILITY FAX [OFFICE] NUMBERS;127
16;Part 4: Ionized cluster beams;128
16.1;Chapter 15. SURFACE MODIFICATION WITH IONIZED GAS - CLUSTER BEAMS;130
16.1.1;1. INTRODUCTION;130
16.1.2;2. MODELING OF CLUSTER ION IMPACT;130
16.1.3;3. GENERATION OF CLUSTER ION BEAMS;132
16.1.4;4. EFFECTS OF GAS-CLUSTER ION BEAMS;133
16.1.5;5. CONCLUSIONS AND PERSPECTIVES;135
16.1.6;ACKNOWLEDGMENTS;136
16.1.7;REFERENCES:;136
16.2;Chapter 16. Ionized cluster beam source characteristics for high-intensity cluster depositionand erosion;138
16.2.1;Abstract;138
16.2.2;1. CLUSTER IMPACTS FOR MICROSTRUCTURING;138
16.2.3;2. CLUSTER BEAM SOURCE CHARACTERISTICS;138
16.2.4;3. HIGH-INTENSITY METAL CLUSTER BEAMGENERATION;139
16.2.5;4. CLUSTER IMPACT LITHOGRAPHY (CIL;141
16.2.6;REFERENCES;141
16.3;CHapter 17. Molecular - dynamics simulation of metal surface sputtering byenergetic rare-gas cluster impact;142
16.3.1;1. INTRODUCTION;142
16.3.2;2. The Model;142
16.3.3;3, THE RESULTS ANDDISCUSSION;144
16.3.4;4, Summary and Conclusions;148
16.3.5;REFERENCES;148
16.4;CHapter 18. Irradiation Effects of Gas-Cluster Ar Ion Beams on Solid Surfaces;150
16.4.1;1. INTRODUCTION;150
16.4.2;2. EXPERIMENT;150
16.4.3;3. RESULTS A N D DISCUSSIONS;151
16.4.4;4. CONCLUSION;152
16.4.5;REFERENCES;153
17;Part 5: Ion and laser processing for industrial applications;154
18;Chapter 19. Ionized cluster beam techniques for film formation;156
18.1;1. INTRODUCTION;156
18.2;2. INITIAL STAGE OF FILM DEPOSITION;157
18.3;3. FILM FORMATION AND EPITAXY;158
18.4;4. APPLICATIONS OF ICB FILMS;159
18.5;5. CONCLUSIONS;161
18.6;ACKNOWLEDGMENT;162
18.7;REFERENCES;162
19;Chapter 20. Fabrication of Soft X-ray Multilayer Mirrors Using Low Energy Ion Beam;164
19.1;1. INTRODUCTION;164
19.2;2. EXPERIMENTAL;164
19.3;3. RESULTS AND DISCUSSION;166
19.4;4. CONCLUSION;169
19.5;5. ACKNOWLEDGMENT;169
19.6;REFERENCES;169
20;CHapter 21. MODIFICATION OF LARGE AREA GLASS SURFACES BY ION IMPLANTATION;170
20.1;1.INTRODUCTION;170
20.2;2 . EXPERIMENT;170
20.3;3 . RESULTS AND DISCUSSION;170
20.4;4. CONCLUSIONS;175
20.5;REFERENCES;175
21;Chapter 22. Investigation of laser and ion beam applications for industrial use;176
21.1;1. INTRODUCTION;176
21.2;2. ETCHING;176
21.3;3. FILM FORMATION AND MIXING;179
21.4;4. CONCLUSION;181
21.5;REFERENCES;181
22;Chapter 23. High Current Metal Ion Beam Transport through a 90° Sector Magnet
;182
22.1;1. INTRODUCTION;182
22.2;2. EXPERIMENTAL APPARATUS;183
22.3;3. EXPERIMENTAL RESULTS;183
22.4;4. CONCLUSION;184
22.5;REFERENCES;184
23;Chapter 24. Performance characteristics of a sheet-shaped microwave ion source using slot antennas on a rectangular

waveguide;186
23.1;1. INTRODUCTION;186
23.2;2. EXPERIMENTAL APPARATUS;186
23.3;3. RESULTS AND DISCUSSION;188
23.4;4. CONCLUSIONS;189
23.5;REFERENCES;189
24;Part 6: Thin film deposition by ion beams I;190
24.1;Chapter 25. IRON FILM FORMATION BY ION BEAM DEPOSITIONKiyoshi Miyake, Kenya Ohashi, Hiromasa Takahashi and Tetsuroh Minemura;192
24.1.1;1. INTRODUCTION;192
24.1.2;2. EXPERIMENTAL;192
24.1.3;3. RESULTS AND DISCUSSION;193
24.1.4;4. CONCLUSION;195
24.1.5;ACKNOWLEDGMENTS;195
24.1.6;REFERENCES;195
24.2;Chapter 26. In-situ STM observation of surfaces irradiated with low energy ion beam;196
24.2.1;Abstract;196
24.2.2;1. Introduction;196
24.2.3;2. Experiment;196
24.2.4;3. Results and Discussion;197
24.2.5;4. Conclusions;199
24.2.6;Acknowledgement;199
24.2.7;References;199
24.3;Chapter 27. In-situ Subplantation of Low-Energy (-100 eV) C+ into GaAs using Combined Ion Beam andMolecular Beam Epitaxy;200
24.3.1;1. Introduction;200
24.3.2;2. The CIBMBE system;200
24.3.3;3. Experimental;202
24.3.4;4. Results and Discussion;202
24.3.5;5.Conclusion;203
24.3.6;6.Acknowledgment;203
24.3.7;References;203
24.4;Chapter 28. Al/Si Epitaxial Deposition by UHV Electric-Mirror Sputtering;204
24.4.1;1. INTRODUCTION;204
24.4.2;2. SYSTEM DESCRIPTION;204
24.4.3;3. EXPERIMENTAL PROCEDURE;205
24.4.4;4. RESULTS AND DISCUSSION;205
24.4.5;5. CONCLUSIONS;207
24.4.6;ACKNOWLEDGEMENTS;207
24.4.7;REFERENCES;207
24.5;Chapter 29. STRUCTURAL STUDIES ON C60 THIN FILMS FORMED BY IONIZED CLUSTERBEAM DEPOSITION;208
24.5.1;1.Introduction;208
24.5.2;2.Experiments;208
24.5.3;3.Results and Discussion;209
24.5.4;4.Conclusions;211
24.5.5;Acknowledgements;211
24.5.6;References;211
24.6;Chapter 30. Diamond-like carbon films produced by cluster deposition;212
24.6.1;1. INTRODUCTION;212
24.6.2;2. EXPERIMENTAL PROCEDURE;213
24.6.3;3. RESULTS;213
24.6.4;4. CONCLUSION;215
24.6.5;Aknowledgements;215
24.6.6;REFERENCES;215
24.7;Chapter 31. Thermal stability of Mo-based multilayer soft x-ray mirrors;218
24.7.1;1. INTRODUCTION;218
24.7.2;2. FABRICATION OF MULTILAYERS;218
24.7.3;3. EVALUATION;218
24.7.4;4. SOFT X-RAY REFLECTIVITY;220
24.7.5;5. CONCLUSION;221
24.7.6;6. ACKNOWLEDGMENTS;221
24.7.7;REFERENCES;221
25;Part 7: Large scale laser systems;222
25.1;Chapter 32. High-power high beam quality ArF laser;224
25.1.1;1. INTRODUCTION;224
25.1.2;2. THE INJECTION-LOCKED ArFLASER SYSTEM;224
25.1.3;3. SYSTEM OPERATION ANDCHARACTERISTICS;226
25.1.4;4. CONCLUSION;228
25.1.5;ACKNOWLEDGEMENT;229
25.1.6;REFERENCES;229
25.2;Chapter 33. High-repetition-rate XeCl Excimer Laser;230
25.2.1;1. INTRODUCTION;230
25.2.2;2. EXPERIMENTAL APPARATUS;231
25.2.3;3. RESULTS;231
25.2.4;5. CONCLUSION;233
25.2.5;REFERENCES;233
25.3;Chapter 34. High repetition rate operation of a high power long pulse XeCl laser;234
25.3.1;1. INTRODUCTION;234
25.3.2;2. SETUP OF 500W LASER;234
25.3.3;3. CHARACTERISTICS OF 500W LASER;235
25.3.4;4. DESIGN OF 2KW LASER AND THEPRELIMINARY TEST RESULTS;236
25.3.5;5. CONCLUSION;238
25.3.6;REFERENCES;238
25.4;Chapter 35. Beam Manipulation Techniques for KrF Excimer Laser;240
25.4.1;1. INTRODUCTION;240
25.4.2;2.WAVELENGTH CONVERSION;241
25.4.3;3. LASER BEAM CLEAN-UP;243
25.4.4;4. FLATTENING OF THE INTENSITYDISTRIBUTION;244
25.4.5;5.PULSE WIDTH CONTROLLING;245
25.4.6;6. CONCLUSION;245
25.4.7;7.ACKN0WLEDGMENT;245
25.4.8;REFERENCE;245
26;Part 8: Laser processes I;246
26.1;Chapter 36. Formation of low stress Si02 films by physical vapor deposition using a C02 laser;248
26.1.1;1. INTRODUCTION;248
26.1.2;2. EXPERIMENTS;248
26.1.3;3. RESULTS AND DISCUSSION;249
26.1.4;4. SUMMARY;251
26.1.5;REFERENCES;251
26.2;Chapter 37. Surface alterations of quartz glass with vacuum ultraviolet rare gas excimer lasers;252
26.2.1;1. INTRODUCTION;252
26.2.2;2. RARE GAS EXCIMER LASERS;253
26.2.3;3. OBSERVATIONS;254
26.2.4;4. REACTION MECHANISMS;255
26.2.5;5. CONCLUSIONS;255
26.3;Chapter 38. Chemical processes in laser-induced aerosol formation from vaporized carbon disulfide;256
26.3.1;1. INTRODUCTION;256
26.3.2;2. EXPERIMENTAL;256
26.3.3;3. RESULTS AND DISCUSSION;256
26.3.4;4. CONCLUSION;259
26.3.5;REFERENCES;259
26.4;Chapter 39. IONIC CLUSTERS OF TRIAZINE DERIVATIVES PRODUCED BYMATRIX-ASSISTED N2 LASER DESORPTION AND C02 LASER DESORPTION;260
26.4.1;1. INTRODUCTION;260
26.4.2;2. EXPERIMENTAL;260
26.4.3;3. RESULTS AND DISCUSSION;261
26.4.4;REFERENCES;263
26.5;Chapter 40. Improvement of high temperature oxidation resistance by laser remelted Si-Cr-Ti coatingon C103-Nb alloy;264
26.5.1;1. INTRODUCTION;264
26.5.2;2. EXPERIMENTAL METHODS;264
26.5.3;3. EXPERIMENTAL RESULTS;265
26.5.4;4. DISCUSSION;266
26.5.5;5. CONCLUSIONS;267
26.5.6;REFERENCES;267
26.6;Chapter 41. Photon Assisted Implantation of B and As in Si;268
26.6.1;1. INTRODUCTION;268
26.6.2;2. SAMPLE PREPARATION;268
26.6.3;3. EXPERIMENTAL RESULTS AND DISCUSSION;269
26.6.4;4. CONCLUSIONS;271
26.6.5;ACKNOWLEDGEMENTS;271
26.6.6;REFERENCES;271
26.7;Chapter 42. Enhanced Vacuum Ultraviolet and X-ray Radiation From ElectricallyControlled KrF Laser Plasma;272
26.7.1;1. INTRODUCTION;272
26.7.2;2. EXPERIMENTAL SET UP;272
26.7.3;3. RESULT;273
26.7.4;4. CONCLUSION;275
26.7.5;5.ACKNOWLEDGMENT;275
26.7.6;REFERENCE;275
27;Part 9: Thin film deposition by ion beams II;276
27.1;Chapter 43. Epitaxial growth of metal-insulator-metal structures on S i ( l l l ) substrates;278
27.1.1;1. INTRODUCTION;278
27.1.2;2. EXPERIMENTAL;278
27.1.3;3. RESULTS AND DISCUSSIONS;279
27.1.4;4. SUMMARY AND CONCLUSION;281
27.1.5;REFERENCES;281
27.2;Chapter 44. Characteristics of polyimide prepared by ion beam assisted vapor deposition;282
27.2.1;1. INTRODUCTION;282
27.2.2;2. EXPERIMENTAL PROCEDURE;282
27.2.3;3. RESULT AND DISCUSSION;283
27.2.4;4. CONCLUSION;285
27.2.5;ACKNOWLEDGEMENTS;285
27.2.6;REFERENCES;285
27.3;Chapter 45. Epitaxial Al films grown on heavily doped Si(100) surfaces by ICB methods forfabricating ULSI contacts;286
27.3.1;1. INTRODUCTION;286
27.3.2;2. EXPERIMENTAL PROCEDURES;286
27.3.3;& EXPERIMENTAL RESULTS;287
27.3.4;4. DISCUSSION;289
27.3.5;5. CONCLUSION;289
27.3.6;REFERENCES;289
27.4;Chapter 46. Z113P2 thin film growth by ionized-cluster beam deposition;290
27.4.1;1. INTRODUCTION;290
27.4.2;2. EXPERIMENT;290
27.4.3;3. RESULTS A N D DISCUSSION;290
27.4.4;4. CONCLUSION;292
27.4.5;REFERENCES;293
27.5;Chapter 47. STM observations of the initial growth processes of metal thin film;294
27.5.1;1. INTRODUCTION;294
27.5.2;2. EXPERIMENT;294
27.5.3;3. RESULTS AND DISCUSSION;295
27.5.4;4. SUMMARY;296
27.5.5;REFERENCES;297
27.6;Chapter 48. Formation of TiN barrier films at the bottom of contact holes byIonized Cluster Beam;298
27.6.1;1. INTRODUCTION;298
27.6.2;2. SIMULATION MODEL;298
27.6.3;3. EXPERIMENTAL;300
27.6.4;4. RESULTS AND DISCUSSION;300
27.6.5;5. CONCLUSIONS;301
27.6.6;REFERENCES;301
27.7;Chapter 49. Low temperature growth of epitaxial and highly oriented TiCL rutile filmsby ICB;302
27.7.1;l.INTRODUCTION;302
27.7.2;2. EXPERIMENTAL;302
27.7.3;3.RESULTS;303
27.7.4;4.CONCLUSIONS;305
27.7.5;REFERENCES;305
28;Part 10: Laser processes II;306
29;Chapter 50. Laser-induced deposition of aluminum thin film Mitsugu Hanabusa;308
29.1;1.INTRODUCTION;308
29.2;2. LASER-CVD OF ALUMINUM THIN FILMS;308
29.3;3.DEPOSITION BY LASER ABLATION;310
29.4;4.COMPARISON OF THE TWO METHODS;312
29.5;5. CONCLUSION;312
29.6;ACKNOWLEDGMENT;312
29.7;REFERENCES;313
30;Chapter 51. Laser ablation studies relevant to thin film deposition;314
30.1;1. INTRODUCTION;314
30.2;2. EXPERIMENT;315
30.3;3. TYPICAL RESULTS;316
30.4;4. CONCLUSIONS;318
30.5;ACKNOWLEDGMENTS;319
30.6;REFERENCES;319
31;Chapter 52. Production of CnN clusters by laser vaporization of a nitrogen-rich polymer;320
31.1;1. INTRODUCTION;320
31.2;2. EXPERIMENTAL SECTION;320
31.3;3. RESULTS AND DISCUSSION;321
31.4;Acknowledgements.;323
31.5;REFERENCES;323
32;Chapter 53. Organic thin films formation by laser ablation;324
32.1;1.INTRODUCTION;324
32.2;2.EXPERIMENTAL;324
32.3;3.RESULTS AND DISCUSSION;325
32.4;4.Conclusion;327
32.5;ACKNOWLEDGEMENT;327
32.6;REFERENCES;327
32.7;REFERENCES;255
33;Chapter 54. Preparation of organic fine particles by excimer laser-induced ablation of solid organic monomers;328
33.1;1. INTRODUCTION;328
33.2;2. EXPERIMENTAL PROCEDURES;328
33.3;3. RESULTS AND DISCUSSION;329
33.4;Acknowledgements;331
33.5;REFERENCES;331
34;Chapter 55. KrF laser source with variable pulse width for material processing;332
34.1;1. INTRODUCTION;332
34.2;2. PRINCIPLE OF VARIABLEPULSE WIDTH GENERATION;332
34.3;3. EXPERIMENT SETUP;333
34.4;4. PRELIMINARY EXPERIMENTALDATA;334
34.5;5. CONCLUSION;335
34.6;REFERENCES;335
35;Chapter 56. Characterization of tungsten-silicon multilayer mirrors fabricated using an ArF excimer laser;336
35.1;1. INTRODUCTION;336
35.2;2. EXPERIMENTAL;337
35.3;3. RESULTS;338
35.4;4. DISCUSSIONS;338
35.5;5. CONCLUSIONS;341
35.6;ACKNOWLEDGEMENTS;341
35.7;REFERENCES;341
36;CHapter 57. Excimer Laser-assisted Chemical Etching of Copper and Silicon in Chlorine Atmospheres;342
36.1;1. INTRODUCTION;342
36.2;2. ETCHING OF SILICON;342
36.3;3. ETCHING OF COPPER;344
36.4;4. CONCLUSIONS;346
36.5;REFERENCES;347
37;Part 11: Laser processes III;348
38;Chapter 58. Thin film growth by pulsed laser deposition;350
38.1;1. Introduction;350
38.2;2. Background and Theory;350
38.3;3. Experimental Approach;354
38.4;Acknowledgement:;356
38.5;REFERENCES;356
39;Chapter 59. Large area oxide thin film by laser deposition;358
39.1;1. INTRODUCTION;358
39.2;2. EXPERIMENTAL;358
39.3;3. RESULTS AND DISCUSSION;359
39.4;REFERENCES;362
40;Chapter 60. Laser ablation in epitaxial growth and processing of semiconductor quantum wells and superlattices;364
40.1;1. INTRODUCTION;364
40.2;2. EPITAXIAL GROWTH OF THIN FILMSAND MULTILAYER STRUCTURES;365
40.3;3. LASER-ASSISTED DIGITAL ETCHINGABLATION (LADEA;368
40.4;4. CONCLUSIONS;369
40.5;ACKNOWLEDGEMENTS;370
40.6;REFERENCES;370
41;Chapter 61. Off-Axis Laserdeposition of YBa2Cu3O7-. thin films and SrTiO3 insulation layers;372
41.1;Abstract;372
41.2;1. Introduction;372
41.3;2. Experimental;372
41.4;References;375
42;Chapter 62. Reduction of particulates on laser deposited thin films;376
42.1;1. I N T R O D U C T I O N;376
42.2;2. E X P E R I M E N T;376
42.3;3. RESULTS A N D DISCUSSION;377
42.4;4. CONCLUSION;379
42.5;REFERENCES;379
43;Chapter 63. Gated ICCD Photography of the KrF-Laser Ablation of Graphite into Background Gases;380
43.1;1. INTRODUCTION;380
43.2;2. EXPERIMENTAL;380
43.3;3. RESULTS AND DISCUSSION;381
43.4;4. CONCLUSIONS;385
43.5;REFERENCES;385
44;Chapter 64. Characterization of laser ablated plasma plume from Pb(Zrx,Ti1-x)O3 target;386
44.1;Introduction;386
44.2;Experiment;386
44.3;Results and Discussions;386
44.4;Acknowledgement;388
44.5;References;388
45;Part 12: Ion implantation I;390
46;Chapter 65. Lattice damage during ion implantation of semiconductors;392
46.1;1. INTRODUCTION;392
46.2;2.D TYENMAPMEIRCA RTEUCROE VDEERPYE NDENCE AND;392
46.3;3. IMPLICATIONS FOR SiGe ALLOYS;394
46.4;4. IMPLICATIONS FOR GaAs;395
46.5;5. OTHER SEMICONDUCTORS;396
46.6;6. SUMMARY;397
46.7;7. ACKNOWLEDGEMENTS;397
46.8;REFERENCES;397
47;Chapter 66. Application of Large Area Ion-Doping Technique to AM-LCD;398
47.1;1. Introduction;398
47.2;2. Implanted Ions in The Ion Doping Technique;399
47.3;3. Effects of Hydrogen in Ion-Doped a-Si:H;400
47.4;4. Electrical Properties of Ion-Doped a-Si:H;401
47.5;5. a-Si:HTFT Fabrication;402
47.6;References;402
48;Chapter 67. Photoluminescence investigation of a new emission formed in Mn+ implanted ultra-pure GaAs grown by MBE;404
48.1;1. INTRODUCTION;404
48.2;2. EXPERIMENTAL;404
48.3;3. RESULTS AND DISCUSSIONS;405
48.4;4. SUMMARY;407
48.5;REFERENCES;407
49;Chapter 68. INCORPORATION OF IMPLANTED HYDROGEN IN Si;408
49.1;1. Introduction;408
49.2;2. Experimental;408
49.3;3. Results a n d Discussion;408
49.4;4. Summary;411
49.5;REFERENCES;411
50;Chapter 69. High Energy Heavy Ion Irradiation Effects on Electron Transport Property inLa2-xSrxCuO4;414
50.1;1. INTRODUCTION;414
50.2;2. EXPERIMENTAL METHOD;414
50.3;3. RESULT AND DISCUSSION;415
50.4;REFERENCES;417
51;Chapter 70. Crystallization behavior of silicon implanted with copper;418
51.1;1. INTRODUCTION;418
51.2;2. EXPERIMENT;418
51.3;3. RESULT & DISCUSSION;419
51.4;4. CONCLUSION;420
51.5;REFERENCES;420
52;Chapter 71. Shallow SIMOX Technology (SST): A Double Mechanically Scanned Approach;422
52.1;1.0 Introduction;422
52.2;2.0 Experiment;422
52.3;3.0 Results;423
52.4;4.0 Discussion;424
52.5;5.0 Conclusion;424
52.6;References;425
53;Chapter 72. Epitaxial crystallization of a-Si and a-GaAs induced by low-energy ion bombardments;426
53.1;1. INTRODUCTION;426
53.2;2. EXPERIMENTAL;426
53.3;3. RESULTS AND DISCUSSION;427
53.4;4 SUMMARY AND CONCLUSIONS;429
53.5;REFERENCES;429
54;Part 13: Ion implantation II;430
54.1;Chapter 73. Multiple-species implantation for defect engineering ofshallow p+-junctions in Si(100);432
54.1.1;Abstract;432
54.1.2;1. Introduction;432
54.1.3;2. Experimental conditions;432
54.1.4;3. As-implanted profiles;433
54.1.5;4. Annealing effects;433
54.1.6;5. Optical probes of lattice damage;435
54.1.7;6. Summary;437
54.1.8;Acknowledgements:;437
54.1.9;References:;437
54.2;Chapter 74. Heavy ion microprobes for microanalysis of materials surfaces;438
54.2.1;1. INTRODUCTION;438
54.2.2;2. MICROPROBE SYSTEM AT GIRIO;439
54.2.3;3. APPLICATION OF HIM;439
54.2.4;4. SUMMARY;442
54.2.5;ACKNOWLEDGMENT;442
54.2.6;REFERENCES;442
54.3;Chpter 75. Behavior and chemical state of gold atoms implanted into silicon;444
54.3.1;1. INTRODUCTION;444
54.3.2;2. EXPERIMENTAL;444
54.3.3;3. RESULTS A N D DISCUSSION;445
54.3.4;4. CONCLUSIONS;446
54.3.5;REFERENCES;446
54.4;Chapter 76. Ion Induced Damage and Dynamic Annealing Processes;448
54.4.1;1. INTRODUCTION;448
54.4.2;2. BASIC CONCEPTS;448
54.4.3;3. SPECIAL CONDITIONS FORAMORPHIZATION;450
54.4.4;4. MODELS AND THE ROLE OFDEFECTS;452
54.4.5;5. CONCLUSIONS;453
54.4.6;REFERENCES;454
55;Part 14: Ion beam mixing and sputtering;456
55.1;Chapter 77. Synthesis of AIN Thin Films by Dual Ion Beam Sputtering Hethod;458
55.1.1;1. INTRODUCTION;458
55.1.2;2. EXPERIMENTAL;459
55.1.3;3. RESULTS AND DISCUSSION;459
55.1.4;4. CONCLUSIONS;461
55.1.5;REFERENCES;461
55.2;Chapter 78. METALLIZATION ON POLYIMIDE FILM BY ION AND VAPOR DEPOSITION (IVD)METHOD;462
55.2.1;1.INTRODUCTION;462
55.2.2;2.EXPERIMENTAL;462
55.2.3;3.RESULTS AND DISCUSSION;463
55.2.4;4.CONCLUSION;465
55.2.5;REFERANCE;465
55.3;Chapter 79. Preparation of Tantalum Oxide thin films on Si substrate by ion beam sputtering;466
55.3.1;l.INTRODUCTION;466
55.3.2;2. EXPERIMENTALS;466
55.3.3;3. RESULTS AND DISCUSSION;467
55.3.4;4. CONCLUSION;469
55.4;Chapter 80. Magnetostriction of thin films of TbxDy1-xFe2 prepared by ion beam sputtering;470
55.4.1;1.INTRODUCTION;470
55.4.2;2.EXPERIMENTAL;470
55.4.3;3.RESULTS AND DISCUSSION;471
55.4.4;4.CONCLUDING REMARKS;473
55.4.5;REFERENCES;473
55.5;Chapter 81. EPITAXIAL GROWTH CONDITION OF NI FILMS DC-BIAS-SPUTTER-DEPOSITED ON MGO(OOl);474
55.5.1;1.INTRODUCTION;474
55.5.2;2.EXPERIMENTAL PROCEDURES;474
55.5.3;3.RESULTS AND DISCUSSIONS;475
55.5.4;ACKNOWLEDGEMENT;477
55.5.5;REFERENCES;477
55.6;Chapter 82. Synthesis of A1N Thin Film by Ion Beam Assisted Sputter Deposition;478
55.6.1;1. Introduction;478
55.6.2;2- Experiments;478
55.6.3;3. Results and Discussion;479
55.6.4;4. Conclusion;481
55.6.5;References;481
55.7;Chapter 83. Anomalous ion mixing/sputtering in metallized compoundsemiconductors;482
55.7.1;1. INTRODUCTION;482
55.7.2;2. EXPERIMENTAL;482
55.7.3;3. RESULTS;482
55.7.4;4 . CONCLUSIONS;485
55.7.5;REFERENCES;485
55.8;Chapter 84. Monoenergetic positron beam formation with 22Na and electrostatic field;486
55.8.1;1. INTRODUCTION;486
55.8.2;2. VESSEL;486
55.8.3;3. ELECTRODE DESIGN;487
55.8.4;REFERENCES;488
55.9;CHapter 85. Tc DECAY OF B i - P b - S r - C a - C u - 0 ETCHED BY He ION;490
55.9.1;1 . INTRODUCTION;490
55.9.2;2.EXPERIMENTAL PROCEDURE;490
55.9.3;3.RESULTS AND DISCUSSIONS;492
55.9.4;3 . 2 X-RAY DIFFRACTION;492
55.9.5;4.CONCLUSION;493
55.9.6;REFERENCES;493
55.10;Chapter 86. Enhancement of thickness of nitrogen compound layer formed by plasma processing in metalsby means of preparative irradiation of electron beam or ion beam;494
55.10.1;1. INTRODUCTION;494
55.10.2;2. EXPERIMENTAL PROCEDURE;494
55.10.3;3. RESULTS AND DISCUSSION;495
55.10.4;4. CONCLUSION;497
55.10.5;ACKNOWLEDGMENT;497
55.10.6;REFERENCES;497
55.11;Chapter 87. RAPID RATE OF He ION ETCHING RATE OF HIGH Tc Bi-Pb-Sr-Ca-Cu-0;498
55.11.1;1.INTRODUCTION;498
55.11.2;2.EXPERIMENTAL PROCEDURE;498
55.11.3;3.RESULTS;499
55.11.4;4.DISCUSSIONS;500
55.11.5;5.CONCLUSION;501
55.12;Chapter 88. AGING INDUCED HIGH Tc OF EXCESS ETCHED B i - P b - S r - C a - C u - 0 BY HeION;502
55.12.1;1.INTRODUCTION;502
55.12.2;2.EXPERIMENTAL PROCEDURE;502
55.12.3;3.RESULTS AND DISCUSSIONS;504
55.12.4;4.CONCLUSION;505
55.12.5;REFERENCES;505
55.13;Chapter 89. POLISHING OF Bi-Pb-Sr-Ca-Cu-0 BY He ION ETCHING;506
55.13.1;1. INTRODUCTION;506
55.13.2;2. EXPERIMENTAL PROCEDURE;506
55.13.3;3.RESULTS;507
55.13.4;4.DISCUSSIONS;507
55.13.5;5.CONCLUSION;508
55.13.6;REFERENCES;508
55.14;Chapter 90. Hydrogen in silicon: surface modification and passivation of defects andimpurities;510
55.14.1;1. INTRODUCTION;510
55.14.2;2. PASSIVATION OF DEFECTS;510
55.14.3;S. PASSIVATION OF DEEPIMPURITIES;510
55.14.4;REFERENCES;513
56;Part 15: Ion implantation into metals, insulators and organic materials;514
56.1;Chapter 91. The Tribological Properties of Ion-implanted JIS SUS304 Stainless Steel;516
56.1.1;1. INTRODUCTION;516
56.1.2;2. ION IMPLANTATION;516
56.1.3;3. TRIBOLOGICAL TESTS;517
56.1.4;4. RESULTS AND DISCUSSION;517
56.1.5;5. CONCLUSIONS;519
56.1.6;REFERENCES;519
56.2;Chapter 92. Extension of implanted layers using repeated cycles of W-Ti alloyevaporation and multiple B+ ion implantation;520
56.2.1;1. Introduction;520
56.2.2;2. Experimental;520
56.2.3;3. Result and discussion;521
56.2.4;4. Conclusion;524
56.2.5;REFERENCES;524
56.3;Chapter 93. Acoustic spectro-microscopy of Al-implanted Ni and Ni alloys;526
56.3.1;1. INTRODUCTION;526
56.3.2;2. ACOUSTIC DIAGNOSIS;526
56.3.3;4. ACOUSTIC DISPERSION ANALYSIS;527
56.3.4;6. CONCLUSION;528
56.3.5;References;528
56.4;Chapter 94. High resolution transmission electron microscopy of Fe1 ANproduced in iron by ion implantation method;530
56.4.1;1.INTRODUCTION;530
56.4.2;2.EXPERIMENTAL PROCEDURE;530
56.4.3;3.RESULTS AND DISCUSSION;531
56.4.4;4.CONCLUSIONS;532
56.4.5;REFERENCES;532
56.5;Chapter 95. Ion implantation and dynamic recovery of tin-doped indium oxide films;534
56.5.1;1. INTRODUCTION;534
56.5.2;2. EXPERIMENT;535
56.5.3;3. RESULTS AND DISCUSSION;535
56.5.4;4. CONCLUSIONS;536
56.5.5;ACKNOWLEDGMENTS;537
56.5.6;REFERENCES;537
56.6;Chapter 96. Application of Ion Implantation in a Glass for Radiotherapy;538
56.6.1;1. INTRODUCTION;538
56.6.2;2. EXPERIMENTAL;539
56.6.3;3. RESULTS AND DISCUSSION;539
56.6.4;4. CONCLUSION;541
56.6.5;REFERENCE;541
56.7;Chapter 97. Modification of surface hardness of alumina by ion implantation;542
56.7.1;1. INTRODUCTION;542
56.7.2;2. EXPERIMENT;542
56.7.3;3. ANALYSIS;542
56.7.4;4. RESULTS AND DISCUSSION;543
56.7.5;5. CONCLUSION;543
56.7.6;REFERENCES;545
56.8;Chapter 98. Depth dependence of IR absorption of MeV and GeV irradiated PMMA andPETP foils;546
56.8.1;1. INTRODUCTION;546
56.8.2;2. EXPERIMENTAL PROCEDURE;547
56.8.3;3. RESULTS AND DISCUSSION;547
56.8.4;4. CONCLUSIONS;549
56.8.5;REFERENCE;549
57;Part 16: Ion implantation into semiconductors;550
57.1;Chapter 99. Topological transformation of In films on Si substrates by ion irradiation;552
57.1.1;1. INTRODUCTION;552
57.1.2;2. EXPERIMENT;552
57.1.3;3. RESULTS AND DISCUSSION;554
57.1.4;4. CONCLUSIONS;555
57.1.5;REFERENCES;555
57.2;Chapter 100. Ion beam synthesis of heteroepitaxial Si/CoxNi1 xSi2/Si(lll) structures;556
57.2.1;^INTRODUCTION;556
57.2.2;2. EXPERIMENTAL;556
57.2.3;3. RESULTS AND DISCUSSION;557
57.2.4;4. CONCLUSIONS;559
57.2.5;ACKNOWLEDGEMENTS;559
57.2.6;REFERENCES;560
57.3;Chapter 100. Changes of physical and chemical properties of polycrystalline siliconfilms by low energy high dose arsenic implantation;562
57.3.1;^INTRODUCTION;562
57.3.2;2.EXPERIMENTAL;562
57.3.3;3.RESULT AND DISCUSSION;563
57.3.4;4.SUMMARY;565
57.3.5;ACKNOWLEDGEMENT;565
57.3.6;REFERENCES;565
58;Part 17: Ion beam material processing I;566
58.1;Chapter 101. Nanofabrication Using Focused Ion Beams;568
58.1.1;1. INTRODUCTION;568
58.1.2;2. PERFORMANCE OF FIB SYSTEMS;568
58.1.3;3. FIB NANOF ABRICATION;569
58.1.4;4. IN SITU FABRICATION BY ION IMPLANTATIONAND REGROWTH;570
58.1.5;5. SUMMARY;573
58.1.6;REFERENCES;573
58.2;Chapter 102. PLASMA IMMERSION ION IMPLANTATION;574
58.2.1;ABSTRACT;574
58.2.2;1. INTRODUCTION;574
58.2.3;2. MODELING OF SHEATH DYNAMICS;574
58.2.4;3. PLASMA SOURCES AND REACTORDESIGNS;575
58.2.5;4. SEMICONDUCTOR DOPING;576
58.2.6;5.MATERIALS SURFACE MODIFICATION;576
58.2.7;6. PROCESSING CONSIDERATIONS;577
58.2.8;7. CONCLUSIONS;578
58.2.9;ACKNOWLEDGMENT;578
58.2.10;REFERENCES;578
58.2.10.1;L INTRODUCTION;580
58.2.10.2;2. EXPERIMENTAL PROCEDURE;580
58.2.10.3;a CRYSTAL-TO-CRYSTAL TRANSITIONS;581
58.2.10.4;4. CRYSTAb-TO-AMORPHOUS TRANSITION:GLASS FORMING ABILITY UPON IONMIXING;581
58.2.10.5;&, CONSTRUCTION OF FREE ENERGYDIAGRAM;582
58.3;Chapter 103. Study of structural phase transition by ion beams;580
58.4;Chapter 104. Formation of colloidal Ag precipitates in fused silica by MeV ion implantation;584
58.4.1;INTRODUCTION;584
58.4.2;EXPERIMENTAL DETAILS;584
58.4.3;RESULTS AND DISCUSSIONS;585
58.4.4;SUMMARY;588
58.4.5;References;589
58.5;Chapter 105. MODIFICATION OF METAL SURFACES BY ION IMPLANTATION;590
58.5.1;1. Introduction;590
58.5.2;2. Experimental procedure;591
58.5.3;3. Results and discussion;591
58.5.4;4, Conclusion;595
58.5.5;Acknowledgement;595
58.5.6;References;595
58.6;Chapter 106. Ion implantation of diamond: damage, doping, and lift-off;596
58.6.1;1. INTRODUCTION;596
58.6.2;2. RESULTS AND DISCUSSION;596
58.6.3;3. SUMMARY;601
58.6.4;Acknowledgments;601
58.6.5;REFERENCES;601
58.7;Chapter 107. Temperature-Dependent Ion Beam Mixing;602
58.7.1;1 . INTRODUCTION;602
58.7.2;2. TEHXEPOERREITMIENCTAALL STAUNDDI ES;602
58.7.3;3. EFFECTS OF MICROSTRUCTURE;605
58.7.4;4. SUMMARY;607
58.7.5;5. ACKNOWLEDGMENTS;607
58.7.6;REFERENCES;607
59;Part 18: Ion beam material processing II;610
59.1;Chapter 108. Solid and liquid phase doping of energetic ion tracks in polymers;612
59.1.1;1. INTRODUCTION;612
59.1.2;2. EXPERIMENTAL PROCEDURE;612
59.1.3;3. RESULTS AND DISCUSSION;613
59.1.4;4. CONCLUSION;614
59.1.5;REFERENCES;614
59.2;Chapter 109. Surface modification of sapphire for enhanced infrared window performance;616
59.2.1;1. INTRODUCTION;616
59.2.2;2. EXPERIMENTAL DETAILS;616
59.2.3;3. DISCUSSION OF RESULTS;617
59.2.4;4. SUMMARY;619
59.2.5;ACKNOWLEDGMENT;619
59.2.6;REFERENCES;619
59.2.7;REFERENCES;501
59.3;Chapter 110. Furnace annealing of single crystal zirconia implanted with hafnium ions;620
59.3.1;1. INTRODUCTION;620
59.3.2;2. EXPERIMENTAL;620
59.3.3;3. RESULTS AND DISCUSSION;620
59.3.4;4. SUMMARY;622
59.3.5;5. ACKNOWLEDGMENTS;623
59.3.6;REFERENCES;623
59.4;Chapter 111. Regrowth measurements in ion-beam amorphised ceramics using timeresolved reflectivity;624
59.4.1;1. INTRODUCTION;624
59.4.2;2. EXPERIMENTAL;624
59.4.3;3. RESULTS AND DISCUSSION;625
59.4.4;4. CONCLUSIONS;627
59.4.5;REFERENCES;627
59.5;Chapter 112. Nitrogen and Argon Irradiation of Silver-Implanted Silica;628
59.5.1;1. INTRODUCTION;628
59.5.2;2. EXPERIMENTAL;628
59.5.3;3. RESULTS AND DISCUSSION;629
59.5.4;4. CONCLUSIONS;631
59.5.5;5. ACKNOWLEDGEMENTS;631
59.5.6;REFERENCES;631
59.6;Chapter 113. Molecular beam epitaxy of oxide thin films using mass-separated low-energy0+ beams;632
59.6.1;1. INTRODUCTION;632
59.6.2;2, EXPERIMENTAL;632
59.6.3;3. RESULTS AND DISCUSSION;633
59.6.4;4. CONCLUSIONS;635
59.6.5;ACKNOWLEDGMENTS;635
59.6.6;REFERENCES;635
60;Author Index;636
61;Subject Index;642