Gallium Nitride Power Devices

1. Auflage 2017
ISBN: 978-981-4774-09-3
Verlag: Pan Stanford Publishing Pte Ltd

Buch, Englisch, 308 Seiten, Format (B × H): 236 mm x 158 mm, Gewicht: 658 g

GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China.

This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices.

GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.

Zielgruppe

Academic, Postgraduate, and Professional Practice & Development

Autoren/Hrsg.

Yu, Hongyu

Duan, Tianli

Fachgebiete

• Naturwissenschaften Physik Physik Allgemein
• Naturwissenschaften Biowissenschaften Biowissenschaften
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik

Inhaltsverzeichnis

The Growth Technology of High-Voltage GaN on Silicon. The Characteristics of Polarization Effects in GaN Heterostructures. The GaN Transistor Fabrication Process. Conventional AlGaN/GaN Heterojunction Field-Effect Transistors. Original Demonstration of Depletion Mode and Enhancement Mode AlGaN/GaN Heterojunction Field-Effect Transistors. Surface Passivation and GaN MIS HEMTs. GaN Vertical Power Devices. Reliability of GaN HEMT Devices. Packaging Technologies for GaN HEMTs.

Über Autor(innen)

Hongyu Yu and Tianli Duan are bkoth with the Southern University of Science and Technology of China, Shenzhen