Zang / Qian Principles of Semiconductor Processes and Device Technology

1. Auflage 2026
ISBN: 978-3-527-84798-3
Verlag: Wiley-VCH
Format: PDF
Kopierschutz: Adobe DRM (»Systemvoraussetzungen)

E-Book, Englisch, 355 Seiten, E-Book

From fundamental physics to frontier devices in semiconductor technology
 
Semiconductor devices underpin modern electronics, from power systems to optical sensors and light emitters. Principles of Semiconductor Processes and Device Technology delivers detailed coverage spanning fundamental physics through advanced fabrication techniques. Written by professors Zhigang Zang and Qingkai Qian of Chongqing University, this reference connects semiconductor physics with practical device development for researchers and engineers.
 
The book covers semiconductor physics, synthesis and characterization of optoelectronic materials, and fabrication processes. Focused chapters address transistors, luminescent materials and devices, superluminescent diodes, solar cells, photodetectors, and graphene devices. Technical details and frontier research results support professionals developing new semiconductor devices across academic and industrial settings.
 
Readers will also find:
 
* Clear explanations of fabrication, characterization, and operation principles for various semiconductor device types from foundational concepts to advanced applications
* Specific technical details and research frontier results enabling practitioners to develop innovative luminescent devices, solar cells, and photodetectors
* Coverage of graphene-based devices and their related optical property investigations grounded in first-principle calculations and experimental validation
* Practical knowledge combining semiconductor process principles with device technology for both academic research and industrial product development
* Detailed treatment of optoelectronic materials synthesis and characterization methods essential for modern semiconductor device engineering and design
 
Designed for materials scientists, electronics engineers, semiconductor physicists, and graduate students in physics and materials sciences, this reference provides the depth required for device design and product development practitioners. Academic and industrial professionals will find it invaluable for understanding and advancing semiconductor technology.

Autoren/Hrsg.

Zang, Zhigang

Qian, Qingkai

Inhaltsverzeichnis

CHAPTER 1: SEMICONDUCTOR PHYSICS
1.1 Introduction
1.2 Properties of Semiconductors
1.3 Crystal Structure and Types of Semiconductors
1.4 Carrier Transport
1.5 Doping Process
1.6 Energy Band Theory
1.7 PN Junctions
 
CHAPTER 2: SYNTHESIS AND CHARACTERIZATION OF OPTOELECTRONIC MATERIALS
2.1 Introduction
2.2 Synthesis of Semiconductors
2.3 Characterization
 
CHAPTER 3: EUV LITHOGRAPHY PROCESS OF SEMICONDUCTOR DEVICES
3.1 Introduction
3.2 EUV Lithography System and Working Principles
3.3 Development of Resist for EUV Lithography
3.4 Mask Materials and Designs for EUV Lithography
3.5 Conclusions and Perspectives
 
CHAPTER 4: TRANSISTORS
4.1 Bipolar Transistors
4.2 Field-Effect Transistors
4.3 Thin-Film Transistors
 
CHAPTER 5: LUMINESCENT MATERIALS AND DEVICES
5.1 Introduction
5.2 Principle of Semiconductor Luminescence
5.3 Structure and Feature of LEDs
5.4 Process of LEDs
5.5 GaN LEDs
5.6 Perovskite LEDs
5.7 White LEDs
 
CHAPTER 6: SUPERLUMINESCENT LIGHT EMITTING DIODES
6.1 Introduction
6.2 History of SLED
6.3 Principle of Active-MMI SLED
6.4 Merit and Results of Active-MMI SLED
 
CHAPTER 7: SOLAR CELLS
7.1 Introduction
7. 2 Basic Principles of Solar Cells
7.3 Typical Solar Cells
7.4 Manufacturing of Solar Cells
7.5 Applications of Solar Cells
7.6 Conclusion
 
CHAPTER 8: PHOTODETECTORS
8.1 Introduction
8.2 Principle of Photodetectors
8.3 General Metrics of Photodetectors
8.4 Perovskite Photodetectors
8.5 Metal-Semiconductor-Metal Photodetectors
8.6 Organic Photomultiplication Detectors
 
CHAPTER 9: GRAPHENE AND GRAPHENE-BASED DEVICES
9.1 Introduction
9.2 Structure and Properties of Graphene
9.3 Preparation Methods of Graphene
9.4 Graphene-Based Devices
9.5 Future of Graphene-Based Devices

Über Autor(innen)

Prof. Zhigang Zang was the winner of the National Youth Talent Project, Chongqing Outstanding Youth Fund, and the first batch Chongqing's leading talents in innovation and entrepreneurship. He graduated from Kyushu University in Japan in June 2011 with a PhD in Engineering in Electronics and Materials Applied Science. From 2011 to 2013, he engaged in related research work at National Shizuoka University in Japan and Nanyang Technological University in Singapore. He was selected in Chongqing's "Young Top Talents" program in June 2017; he was a researcher and doctoral supervisor of Chongqing University's "Hundred Talents Plan" from March 2014 to 2018; he was a professor and doctoral supervisor of Chongqing University from 2018 to present. He was selected as a leading talent in Chongqing and a distinguished professor of "Bayu Scholars" in 2019.
 
Qingkai Qian (Associate Professor) received his B.S. and M.S. degrees, both in physics from Tsinghua University, Beijing, China, in 2012 and 2014, respectively. He obtained his Ph.D. degree in electronic and computer engineering from the Hong Kong University of Science and Technology, Hong Kong SAR, China in 2018. He was as a postdoctoral researcher in Department of Electrical Engineering, The Pennsylvania State University from 2019 to 2020. He joined College of Optoelectronic Engineering, Chongqing University in 2021, and currently is an Associate Professor. His research interests are the optoelectronic devices based on perovskites, low-dimensional materials, and their related optical property investigations based on first-principle calculations. He is currently young editorial board member of Rare Metals and Vacuum.