Zhang / Guo / Qian Wide Band-Gap Semiconductor Nuclear Radiation Detector

1. Auflage 2025
ISBN: 978-981-960340-4
Verlag: Springer Singapore
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, 284 Seiten

Reihe: Physics and Astronomy (R0)

This book’s purpose and characteristics are not only to introduce the fundamental theoretical knowledge of nuclear radiation detection principles, detector preparation, and detection signal generation, but also provides a comprehensive introduction of the design, optimization, and preparation of semiconductor nuclear radiation detection. Beginning with the current materials and device processes of wide band gap semiconductors, the book focuses on the challenges and essential technologies of detector design, optimization, and preparation. The book also provides theoretical support for device design optimization and device failure analysis through the introduction of detector simulation models that integrate simulation results with experimental data.

Zielgruppe

Research

Autoren/Hrsg.

Zhang, Yuming

Guo, Hui

Zhang, Jinfeng

Qian, Chiwen

Liu, Yapeng

Inhaltsverzeichnis

Introduction.- Detection theory of wide band gap semiconductor nuclear radiation detectors.- Diamond Nuclear Radiation Detectors.- Preparation of sic nuclear radiation detectors.- The investigation of the response of sic nuclear radiation detectors to radiation.- Effect of irradiation damage on radiation response of sic materials.

Über Autor(innen)

Yuming Zhang, male, The Dean of Xidian University's School of Microelectronics, a professor, is presently the Director of the Key Laboratory of Wide-band Gap Semiconductor Technology. He is a senior member of the IEEE International Society ,andthe Chinese Institute of Electronics.and the Vice Chairman of the Shaanxi Branch of the Chinese Society for Computational Physics. He has been researching high performance semiconductor devices for years. In China, he fabricated the first silicon carbide MPS diode and the first silicon carbide MOSFET device, making significant contributions to the development of these devices in China. He has published over 210 papers and holds 21 patents for inventions. The recipient of the fourth "Shaanxi Youth Science and Technology Award," etc. 

Guo Hui, male,professor of Xidian University's School of Microelectronics. His primary research interests include compound semiconductor materials, devices and circuits, and new semiconductordevices.He is a member of IEEE and has participated in numerous scientific research initiatives over the past few years as a key member of the National Key Basic Research Development Program and National Natural Science Foundation of China. He has published over twenty articles in scholarly journals and international conferences, the majority of which have been indexed by SCI and EI. As the primary inventor, he has applied for more than thirty patents and been granted four US patents.

Jinfeng Zhang, female, professor of Xidian University's School of Microelectronics.In recent years, he has presided over numerous national initiatives, such as the National Key Research and Development Program and the Natural Science Foundation, among others. He is the recipient of the First Prize of Technical Invention Award (2018) of the Ministry of Education's Excellent Achievement Award for Scientific Research in Higher Education,  the First Prize of Science and Technology Award of Shaanxi Province (2012)."Nitride Wide Band Gap Semiconductor Materials and Electronic Devices" was the first domestic monograph in the field of nitride semiconductors. The first in China, his research findings on MoO3-dielectric diamond MOSFET devices were published twice in IEEE Electron Device Letters.

Chiwen Qian received the B.E. degree in microelectronics science and engineering from XidianUniversity Xi’an, China, in 2018, , where he is currently pursuing the Ph.D. degree with the School of Microelectronics.His current research interests include modeling, design, and fabrication of the SiC radiation detector and betavoltaic battery.

Yapeng Liu received the B.S. degree in Microelectronics science from Xi’an University of Technology, Xi’an, China, in 2013, and the M.S. degree in Electrical Engineering from Stevens Institute of Technology, New Jersey, USA, in 2013. In 2016, he joined the Beijing Microelectronics Technology Institute, where he worked on integrated circuit design and embedded systems. He is currently pursuing his PhD degree at Xidian University in the field of electrical engineering.  His research interests now include radiation detector design, chip radiation hardening design, SOC system design, and embedded system