Sonstiges, Englisch, Band Volume 806, 156 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Reihe: Materials Science Forum
Sonstiges, Englisch, Band Volume 806, 156 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Reihe: Materials Science Forum
ISBN: 978-3-03795-990-9
Verlag: Trans Tech Publications
The 25 papers are grouped as follows:
Chapter 1: 3C-SiC ? Epitaxy, Characterization and Devices;
Chapter 2: 4H-SiC and 15R-SiC ? Growth and Characterization;
Chapter 3: Related Materials ? Gallium Nitride, Graphene and Silicon;
Chapter 4: SiC Devices and Device Processing
Autoren/Hrsg.
Fachgebiete
Weitere Infos & Material
3C-SiC: New Interest for MEMS DevicesStrain Evaluation and Fracture Properties of Hetero-Epitaxial Single Crystal 3C-SiC Squared MembraneBuffer Layer Optimization for the Growth of State of the Art 3C-SiC/SiAnalysis on 3C-SiC Layer Grown on Pseudomorphic-Si/Si1-xGex/Si(001) HeterostructuresGe Assisted 3C-SiC Nucleation and Growth by Vapour Phase Epitaxy on On-Axis 4H-SiC SubstrateHeteroepitaxy of P-Doped 3C-SiC on Diamond by VLS TransportSiC NWs Grown on Silicon Substrate Using Fe as CatalystInvestigation of Aluminum Incorporation in 4H-SiC Epitaxial LayersRaman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVDImprovement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS TransportInterface Shape: A Possible Cause of Polytypes Destabilization during Seeded Sublimation Growth of 15R-SiCNondestructive Evaluation of Photoelectrical Properties of a PVT Grown Bulk 15R-SiC CrystalPotentialities of AlGaN/GaN Heterostructures Grown on 2?-Off 4H-SiC SubstratesPolarization Engineering of Al(Ga)N/GaN HEMT Structures for Microwave High Power ApplicationsHigh Quality Graphene Formation on 3C-SiC/4H-AlN/Si HeterostructureSynthesis and Characterization of (3-Aminopropyl)Triethoxysilane-Modified Epitaxial GrapheneOrigin of the Current Transport Anisotropy in Epitaxial Graphene Grown on Vicinal 4H-SiC (0001) SurfacesAnti-Reflective Porous Silicon Features by Substrate Conformal Imprint Lithography for Silicon Photovoltaic ApplicationsImpact of Design on Electrical Characteristics of 3.5 kV 4H-SiC JBS Diode10 MeV Proton Irradiation Effect on 4H-SiC nMOSFET Electrical ParametersImpact of Fabrication Process on Electrical Properties and on Interfacial Density of States in 4H-SiC n-MOSFETs Studied by Hall EffectEffect of Phosphorus Implantation Prior to Oxidation on Electrical Properties of Thermally Grown SiO2/4H-SiC MOS StructuresStable Phosphorus Passivated SiO2/4H-SiC Interface Using Thin OxidesProbing at Nanoscale Underneath the Gate Oxides in 4H-SiC MOS-Based Devices Annealed in N2O and POCl3The Impact of Oxygen Flow Rate on the Oxide Thickness and Interface Trap Density in 4H-SiC MOS Capacitors
