Agarwala / Ltd Special Defects in Semiconducting Materials
Erscheinungsjahr 1999
ISBN: 978-3-0357-0687-1
Verlag: Trans Tech Publications
Format: PDF
Kopierschutz: 0 - No protection
E-Book, Englisch, 284 Seiten
ISBN: 978-3-0357-0687-1
Verlag: Trans Tech Publications
Format: PDF
Kopierschutz: 0 - No protection
With the continuing evolution of fabrication techniques and new structures for semiconducting materials, the list of new defect phenomena has also increased apace. The present book discusses point defects, defect-assisted diffusion, metal impurity additions, metastable defects, magnetic hyperfine interaction of deep donors in compound semiconductors, and oxygen and hydrogen impurity defects.
Autoren/Hrsg.
Weitere Infos & Material
Preface
Intrinsic Point Defects and Grown-in Defects in Silicon
Point Defect Assisted Diffusion in Semiconductors
Diffusion and Electrical Properties of 3d Transition-Metal Impurities in Silicon
Metastable Defects in Compound Semiconductors
Electronic Structure and Hyperfine Structure of Deep Donors in Si and in Some Compound Semiconductors
Role of Oxygen in Metal Silicide Formation and Properties
The Effects of Implanted Arsenic on Ti-Silicide Formation
The Interaction of Hydrogen with Deep Level Defects in Silicon
Role of Metal Impurity 'Bi' in Amorphous Chalcogenide Semiconductors




