E-Book, Englisch, 340 Seiten
Colinge FinFETs and Other Multi-Gate Transistors
1. Auflage 2007
ISBN: 978-0-387-71752-4
Verlag: Springer
Format: PDF
Kopierschutz: 1 - PDF Watermark
E-Book, Englisch, 340 Seiten
Reihe: Integrated Circuits and Systems
ISBN: 978-0-387-71752-4
Verlag: Springer
Format: PDF
Kopierschutz: 1 - PDF Watermark
This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.
Autoren/Hrsg.
Weitere Infos & Material
1;Preface;6
2;Table of Content;9
3;Contributors;14
4;1 The SOI MOSFET: from Single Gate to Multigate;15
4.1;1.1 MOSFET Scaling and Moore’s Law;15
4.2;1.2 Short-Channel Effects;16
4.3;1.3 Gate Geometry and Electrostatic Integrity;18
4.4;1.4 A Brief History of Multiple-Gate MOSFETs;22
4.5;1.5 Multigate MOSFET Physics;31
4.6;References;51
5;2 Multigate MOSFET Technology;63
5.1;2.1 Introduction;63
5.2;2.2 Active Area: Fins;66
5.3;2.3 Gate Stack;84
5.4;2.4 Source/Drain Resistance and Capacitance;99
5.5;2.5 Mobility and Strain Engineering;105
5.6;2.6 Contacts to the Fins;112
5.7;Acknowledgments;114
5.8;References;115
6;3 BSIM-CMG: A Compact Model for Multi-Gate Transistors;126
6.1;3.1 Introduction;126
6.2;3.2 Framework for Multigate FET Modeling;127
6.3;3.3 Multigate Models: BSIM-CMG and BSIM-IMG;128
6.4;3.4 BSIM-CMG;130
6.5;3.5 The BSIM-IMG Model;160
6.6;3.6 Summary;164
6.7;References;164
7;4 Physics of the Multigate MOS System;167
7.1;4.1 Device electrostatics;167
7.2;4.2 Double gate MOS system;175
7.3;4.3 Two-dimensional confinement;196
7.4;References;197
8;5 Mobility in Multigate MOSFETs;202
8.1;5.1 Introduction;202
8.2;5.2 Double-Gate MOSFETs and FinFETs;203
8.3;5.3 Silicon multiple-gate nanowires;244
8.4;References;258
9;6 Radiation Effects in Advanced Single- and Multi-Gate SOI MOSFETs;268
9.1;6.1 A brief history of radiation effects in SOI;268
9.2;6.2 Total lonizing dose effects;270
9.3;6.3 Single-event effects;282
9.4;References;298
10;7 Multi-Gate MOSFET Circuit Design;303
10.1;7.1 Introduction;303
10.2;7.2 Digital Circuit Design;304
10.3;7.3 Analog Circuit Design;325
10.4;7.4 SoC Design and Technology Aspects;341
10.5;Acknowledgments;342
10.6;References;343
11;Index;346
