Deleonibus Intelligent Integrated Systems

Devices, Technologies, and Architectures
Erscheinungsjahr 2014
ISBN: 978-981-4411-43-1
Verlag: Pan Stanford Publishing
Format: PDF
Kopierschutz: Adobe DRM (»Systemvoraussetzungen)

E-Book, Englisch, 516 Seiten

Reihe: Pan Stanford Series on Intelligent Nanosystems

This book gives a state-of-the-art overview by internationally recognized researchers of the architectures of breakthrough devices required for future intelligent integrated systems. The first section highlights Advanced Silicon-Based CMOS Technologies. New device and functional architectures are reviewed in chapters on Tunneling Field-Effect Transistors and 3-D monolithic Integration, which the alternative materials could possibly use in the future. The way we can augment silicon technologies is illustrated by the co-integration of new types of devices, such as molecular and resistive spintronics-based memories and smart sensors, using nanoscale features co-integrated with silicon CMOS or above it.

Autoren/Hrsg.

Deleonibus, Simon

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Mikroprozessoren
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Elektronische Baugruppen, Elektronische Materialien
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Transistoren
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik

Inhaltsverzeichnis

Introduction
Intelligent Integrated Systems Forward to Zero Variability and Zero Power! S. Deleonibus

Advanced Silicon-Based CMOS Technologies
From Planar to Trigate and Nanowires Fully Depleted Transistors, Francois Andrieu, Olivier Weber, Marie-Anne Jaud, Thomas Ernst, and Olivier Faynot
Schottky Source/Drain MOSFETs, Emmanuel Dubois, Guilhem Larrieu, Nicolas Reckinger, Xiaohui Tang, Jean-Pierre Raskin, Maud Vinet, and Louis Hutin
Advances in Silicon-On-Diamond Technology, Jean-Paul Mazellier, Julie Widiez, Marc Rabarot, François Andrieu, Samuel Saada, Mathieu Lions, Philippe Bergonzo, and Simon Deleonibus
GeOI, SiGeOI and New Devices Architectures, Cyrille Le Royer, Emmanuel Augendre, Louis Hutin, Frédéric Mayer, William Van den Daele
3D Monolithic Integration, Maud Vinet, Perrine Batude, Shashikanth Bobba
III-V Quantum-Well FETs, Suman Datta
Carbon Integrated Electronics, Hong Li, Yasin Khatami, Deblina Sarkar, Jiahao Kang, Chuan Xu, Wei Liu, and Kaustav Banerjee

New Paths to Augmented Silicon CMOS Technologies
Tunneling Field-Effect Transistors – Challenges and Perspectives, Joachim Knoch
Molecular Memories, Julien Buckley, Tiziana Pro, Venera Aiello, Micaël Charbonneau, and Barbara De Salvo
Resistive Memories, Blanka Magyari-Köpe and Yoshio Nishi
High frequency vibrating nanowire, Laurent Duraffourg and Thomas Ernst
Spintronics, Guillaume Prenat, Ursula Ebels, Gregory Di Pendina, Ricardo Sousa, and Bernard Dieny
Smart Multiphysics Sensors, Masayoshi Esashi
3D Integration and Wafer Level Packaging, Gilles Poupon