Dyakonov Spin Physics in Semiconductors

1. Auflage 2008
ISBN: 978-3-540-78820-1
Verlag: Springer Berlin Heidelberg
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, Band 157, 442 Seiten

Reihe: Springer Series in Solid-State Sciences

The purpose of this collective book is to present a non-exhaustive survey of sp- related phenomena in semiconductors with a focus on recent research. In some sense it may be regarded as an updated version of theOpticalOrientation book, which was entirely devoted to spin physics in bulk semiconductors. During the 24 years that have elapsed, we have witnessed, on the one hand, an extraordinary development in the wonderful semiconductor physics in two dim- sions with the accompanying revolutionary applications. On the other hand, during the last maybe 15 years there was a strong revival in the interest in spin phen- ena, in particular in low-dimensional semiconductor structures. While in the 1970s and 1980s the entire world population of researchers in the ?eld never exceeded 20 persons, now it can be counted by the hundreds and the number of publications by the thousands. This explosive growth is stimulated, to a large extent, by the hopes that the electron and/or nuclear spins in a semiconductor will help to accomplish the dream of factorizing large numbers by quantum computing and eventually to develop a new spin-based electronics, or 'spintronics'. Whether any of this will happen or not, still remains to be seen. Anyway, these ideas have resulted in a large body of interesting and exciting research, which is a good thing by itself. The ?eld of spin physics in semiconductors is extremely rich and interesting with many spectacular effects in optics and transport.

From 1962 to 1998 M. I. Dyakonov was a researcher at the Ioffe Institute in St. Petersburg. In 1998 he became professor at Université Montpellier II, France. His name is accociated with the Dyakonov-Perel mechanism of spin relaxation in semiconductors, the Dyakonov-Shur plasma instability in two-dimensional electron fluid, and the Dyakonov waves at interfaces of transparent anisotropic materials. In 1971, together with V.I. Perel he has predicted new spin-related transport phenomena, one of which, now called the Spin Hall Effect, has become a subject of extensive experimental and theoretical studies. He was awarded the State Prize of USSR in 1973 and the Ioffe prize of the Russian Academy of Sciences in 1993.

Autoren/Hrsg.

Dyakonov, Mikhail I.

Inhaltsverzeichnis

1;Preface;7
2;Contents;8
3;List of Contributors;16
4;Basics of Semiconductor and Spin Physics;18
4.1;Historical Background;18
4.2;Spin Interactions;19
4.2.1;The Pauli Principle;19
4.2.2;Exchange Interaction;20
4.2.3;Spin-Orbit Interaction;20
4.2.4;Hyperfine Interaction with Nuclear Spins;21
4.2.5;Magnetic Interaction;22
4.3;Basics of Semiconductor Physics;22
4.3.1;Electron Energy Spectrum in a Crystal;22
4.3.2;Effective Masses of Electrons and Holes;22
4.3.3;The Effective Mass Approximation;23
4.3.4;Role of Impurities;24
4.3.5;Excitons;25
4.3.6;The Structure of the Valence Band. Light and Heavy Holes;25
4.3.6.1;Neglecting Spin-Orbit Interaction;25
4.3.6.2;Effects of Spin-Orbit Interaction;26
4.3.6.3;Gapless Semiconductors;27
4.3.6.4;Warping of the Iso-energetic Surfaces;27
4.3.6.5;Oddities in the Behavior of Light and Heavy Holes;27
4.3.7;Band Structure of GaAs;28
4.3.8;Photo-generation of Carriers and Luminescence;28
4.3.9;Angular Momentum Conservation in Optical Transitions;29
4.3.10;Low Dimensional Semiconductor Structures;30
4.3.10.1;Energy Spectrum of Electrons and Holes in a Quantum Well;30
4.3.10.2;Quantum Dots;32
4.4;Overview of Spin Physics in Semiconductors;32
4.4.1;Optical Spin Orientation and Detection;32
4.4.2;Spin Relaxation;33
4.4.2.1;Generalities;33
4.4.2.1.1;omegatauc«1 (Most Frequent Case);34
4.4.2.1.2;omegatauc»1;34
4.4.2.2;Spin Relaxation Mechanisms;34
4.4.2.2.1;Elliott-Yafet Mechanism [15, 16];34
4.4.2.2.2;Dyakonov-Perel Mechanism [9, 17];35
4.4.2.2.3;Bir-Aronov-Pikus Mechanism [19];35
4.4.2.2.4;Relaxation via Hyperfine Interaction with Nuclear Spins;36
4.4.2.2.5;Spin Relaxation of Holes in the Valence Band;36
4.4.2.3;Influence of Magnetic Field on Spin Relaxation;36
4.4.2.4;Spin Relaxation of Two-dimensional Electrons and Holes;37
4.4.3;Hanle Effect;38
4.4.4;Mutual Transformations of Spin and Charge Currents;39
4.4.5;Interaction between the Electron and Nuclear Spin Systems;40
4.4.5.1;Hyperfine Interaction between Electron and Nuclear Spins;40
4.4.5.2;Dipole-Dipole Interaction between Nuclear Spins;41
4.4.5.3;Zeeman Interaction of Electron and Nuclear Spins;41
4.5;Overview of the Book Content;42
4.5.1;Time-Resolved Optical Techniques.;42
4.5.2;Spin Dynamics in Quantum Wells and Quantum Dots.;42
4.5.3;Spin Noise Spectroscopy.;42
4.5.4;Coherent Spin Dynamics in Quantum Dots.;42
4.5.5;Spin Properties of Confined Electrons in Silicon.;43
4.5.6;Coupling of Spin and Charge Currents.;43
4.5.7;Spin Injection.;43
4.5.8;Nuclear Spin Effects in Optics and Electron Transport.;43
4.5.9;Spin Dynamics in Diluted Magnetic Semiconductors.;43
4.6;References;43
5;Spin Dynamics of Free Carriers in Quantum Wells;46
5.1;Introduction;46
5.2;Optical Measurements of Spin Dynamics;46
5.3;Mechanisms of Spin Relaxation of Free Electrons;49
5.4;Electron Spin Relaxation in Bulk Semiconductors;52
5.5;Electron Spin Relaxation in [001]-Oriented Quantum Wells;54
5.5.1;Symmetrical [001]-Oriented Quantum Wells;54
5.5.2;Structural Inversion Asymmetry in [001]-Oriented Quantum Wells;57
5.5.3;Natural Interface Asymmetry in Quantum Wells;59
5.5.4;Oscillatory Spin-Dynamics in Two-dimensional Electron Gases;62
5.6;Spin Dynamics of Free Holes in Bulk Material and Quantum Wells;64
5.7;Engineering and Controlling the Spin Dynamics in Quantum Wells;66
5.8;Conclusions;68
5.9;References;69
6;Exciton Spin Dynamics in Semiconductor Quantum Wells;72
6.1;Two-dimensional Exciton Fine Structure;72
6.1.1;Short-Range Electron-Hole Exchange;73
6.1.2;Long-Range Electron-Hole Exchange;74
6.2;Optical Orientation of Exciton Spin in Quantum Wells;75
6.3;Exciton Spin Dynamics in Quantum Wells;77
6.3.1;Exciton Formation in Quantum Wells;77
6.3.2;Spin Relaxation of Exciton-Bound Hole;79
6.3.2.1;Measurement of the Hole Spin Relaxation Time by Monitoring the Total Luminescence Intensity Dynamics;80
6.3.2.2;Measurement of the Hole Spin Relaxation with a Two-photon Excitation Process;81
6.3.3;Spin Relaxation of Exciton-Bound Electron;82
6.3.4;Exciton Spin Relaxation Mechanism;83
6.3.4.1;Exciton Spin Relaxation Due to Electron-Hole Exchange: The Maille, Andrada e Silva, and Sham Mechanism;83
6.3.4.2;Measurement of the Maille, Andrada e Silva, and Sham Spin Relaxation Time;85
6.3.4.3;Electric Field Dependence of the Exciton Spin Relaxation Time;89
6.4;Exciton Exchange Energy and g-Factor in Quantum Wells;89
6.4.1;Exchange Interaction of Excitons and g-Factor Measured with cw Magneto-Photoluminescence Spectroscopy;90
6.4.1.1;Exciton Exchange Energy;90
6.4.1.2;Exciton g-Factor;93
6.4.2;Exciton Spin Quantum Beats Spectroscopy;93
6.4.2.1;Exciton Spin Quantum Beats in Longitudinal Magnetic Fields;94
6.4.2.2;Exciton Spin Quantum Beats in Transverse Magnetic Fields;95
6.5;Exciton Spin Dynamics in Type II Quantum Wells;98
6.6;Spin Dynamics in Dense Excitonic Systems;100
6.7;References;103
7;Exciton Spin Dynamics in Semiconductor Quantum Dots;107
7.1;Introduction;107
7.2;Electron-Hole Complexes in Quantum Dots;108
7.2.1;Coulomb Corrections to the Single Particle Picture;109
7.2.2;Fine Structure of Neutral Excitons;109
7.3;Exciton Spin Dynamics in Neutral Quantum Dots without Applied Magnetic Fields;111
7.3.1;Exciton Spin Dynamics under Resonant Excitation;111
7.3.2;Exciton Spin Quantum Beats: The Role of Anisotropic Exchange;113
7.4;Exciton Spin Dynamics in Neutral Quantum Dots in External Magnetic Fields;114
7.4.1;Zeeman Effect Versus Anisotropic Exchange Splittings in Single Dot Spectroscopy;114
7.4.1.1;Faraday Configuration;114
7.4.1.2;Voigt Configuration;116
7.4.2;Exciton Spin Quantum Beats in Applied Magnetic Fields;116
7.4.2.1;Faraday Configuration;116
7.4.2.2;Voigt Configuration;117
7.5;Charged Exciton Complexes: Spin Dynamics without Applied Magnetic Fields;117
7.5.1;Formation of Trions: Doped and Charge Tuneable Structures;118
7.5.2;Fine Structure and Polarization of X+ and X- Excitons;119
7.5.3;Spin Dynamics in Negatively Charged Exciton Complexes Xn-;120
7.5.4;Spin Memory of Trapped Electrons;122
7.6;Charged Exciton Complexes: Spin Dynamics in Applied Magnetic Fields;122
7.6.1;Electron Spin Polarization in Positively Charged Excitons in Longitudinal Magnetic Fields;123
7.6.2;Electron Spin Coherence in Positively Charged Excitons in Transverse Magnetic Fields;125
7.7;Conclusions;126
7.8;References;126
8;Time-Resolved Spin Dynamics and Spin Noise Spectroscopy;130
8.1;Introduction;130
8.2;Time- and Polarization-Resolved Photoluminescence;131
8.2.1;Experimental Technique;132
8.2.2;Experimental Example I: Spin Relaxation in (110) Oriented Quantum Wells;134
8.2.3;Experimental Example II: Coherent Dynamics of Coupled Electron and Hole Spins in Semiconductors;137
8.2.4;Photoluminescence and Spin-Optoelectronic Devices;138
8.3;Time-Resolved Faraday/Kerr Rotation;138
8.3.1;Experimental Set-Up;140
8.3.2;Experimental Example: Spin Amplification;142
8.4;Spin Noise Spectroscopy;144
8.4.1;Experimental Realization;144
8.5;Spin Noise Measurements in n-GaAs;146
8.6;Conclusions;147
8.7;References;148
9;Coherent Spin Dynamics of Carriers;150
9.1;Introduction;150
9.1.1;Spin Coherence and Spin Dephasing Times;151
9.1.2;Optical Generation of Spin Coherent Carriers;152
9.1.3;Experimental Technique;153
9.2;Spin Coherence in Quantum Wells;155
9.2.1;Samples.;155
9.2.2;Electron Spin Coherence;156
9.2.2.1;Optical Spectra of the CdTe/CdMgTe Quantum Well;156
9.2.2.2;Long-Lived Electron Spin Coherence;157
9.2.2.3;Generation Mechanism: Model Considerations;159
9.2.2.3.1;Resonant Excitation of Trions;160
9.2.2.3.2;Resonant Excitation of Excitons in a Diluted 2DEG;162
9.2.2.3.3;Detection Aspects;162
9.2.2.4;Two-Color Pump-Probe Experiments;163
9.2.2.4.1;Pump Power Dependence of the Kerr Rotation Amplitude;165
9.2.3;Hole Spin Coherence;166
9.3;Spin Coherence in Singly Charged Quantum Dots;168
9.3.1;Samples.;169
9.3.2;Exciton and Electron Spin Beats Probed by Faraday Rotation;170
9.3.2.1;Experiment.;170
9.3.2.2;Spectral Dependence of the Electron g-Factor;172
9.3.2.3;Anisotropy of Electron g-Factor in Quantum Dot Plane;172
9.3.3;Generation of Electron Spin Coherence;172
9.3.4;Mode Locking of Spin Coherence in an Ensemble of Quantum Dots;175
9.3.4.1;Spin Coherence Time of an Individual Electron;175
9.3.4.2;Mechanism of Spin Synchronization;176
9.3.4.3;Control of Ensemble Spin Precession;179
9.3.4.3.1;Two Pump Pulse Excitation Protocol;179
9.3.4.3.2;Signal Shaping by Changing Delay between Pump Pulses;181
9.3.4.3.3;Polarization Control of Signal Phase;182
9.3.4.3.4;Stability Against Temperature Increase and Magnetic Field Variation;183
9.3.4.3.5;Requirements for Quantum Dot Ensemble;183
9.3.5;Nuclei Induced Frequency Focusing of Spin Coherence;184
9.4;Conclusions;189
9.5;References;190
10;Spin Properties of Confined Electrons in Si;193
10.1;Introduction;193
10.2;Spin-Orbit Effects in Si Quantum Wells;196
10.2.1;The Bychkov-Rashba Field;196
10.2.1.1;Thermal Distribution of the Bychkov-Rashba Field;197
10.2.1.2;g-Factor Anisotropy-Bychkov-Rashba Field in Si/SiGe Structures;198
10.3;Spin Relaxation of Conduction Electrons in Si/SiGe Quantum Wells;200
10.3.1;Mechanisms of Spin Relaxation of Conduction Electrons;200
10.3.2;Linewidth and the Longitudinal Relaxation Time of the Two-dimensional Electron Gas in Si/SiGe;201
10.3.3;Dephasing and Longitudinal Spin Relaxation;205
10.3.3.1;Transverse and Longitudinal Relaxation Originating from the Classical Dyakonov-Perel Relaxation;205
10.3.3.2;Angular Dependence of the Dyakonov-Perel Spin Relaxation;207
10.3.4;Comparison with Experiment;208
10.4;Current Induced Spin-Orbit Field;209
10.5;ESR Excited by an ac Current;211
10.5.1;Electric Dipole vs. Magnetic Dipole Spin Excitation;211
10.5.2;The ESR Signal Strength in Two-dimensional Si/SiGe Structures-Experimental Results;212
10.5.2.1;Sensitivity of ESR in Two-dimensional Si/SiGe;212
10.5.2.2;Temperature Dependence;212
10.5.2.3;Power Dependence of the Line Shape and Amplitude;213
10.5.2.4;Angular Dependence of the Amplitudes of ESR Signals;213
10.5.3;Modeling the Current Induced Excitation and Detection of ESR;213
10.5.4;Power Absorption, Line Shape;215
10.6;Spin Relaxation under Lateral Confinement;215
10.6.1;Shallow Donors;216
10.6.1.1;Hyperfine Interaction in Shallow Donors;216
10.6.1.2;Longitudinal Spin Relaxation in Donors;218
10.6.2;From the Two-dimensional Electron Gas to Quantum Dots;218
10.6.3;Spin Relaxation and Dephasing in Si Quantum Dots;219
10.7;Conclusions;220
10.8;References;221
11;Spin Hall Effect;224
11.1;Background: Magnetotransport in Molecular Gases;224
11.2;Phenomenology (with Inversion Symmetry);226
11.2.1;Preliminaries;226
11.2.2;Spin and Charge Current Coupling;226
11.2.3;Phenomenological Equations;227
11.2.4;Physical Consequences of Spin-Charge Coupling;228
11.2.4.1;Anomalous Hall Effect;228
11.2.4.2;Electric Current Induced by curlP;228
11.2.4.3;Current-Induced Spin Accumulation, or Spin Hall Effect;229
11.2.4.4;The Degree of Polarization in the Spin Layer;230
11.2.5;Related Problems;231
11.2.5.1;The Validity of the Approach Based on the Diffusion Equation;231
11.2.5.2;How the Spin Current Should Be Defined;231
11.2.5.3;Additional Terms in (8.6);232
11.2.6;Electrical Effects of Second Order in Spin-Orbit Interaction;232
11.2.6.1;Bulk Effects;233
11.2.6.2;Surface Effects;234
11.3;Phenomenology (without Inversion Symmetry);235
11.4;Microscopic Mechanisms;236
11.4.1;Spin Asymmetry in Electron Scattering;236
11.4.1.1;Electron Spin Rotates;237
11.4.1.2;The Scattering Angle Depends on Spin;237
11.4.1.3;Spin Rotation is Correlated with Scattering;238
11.4.1.4;The Value of gamma for Skew Scattering;238
11.4.2;The Side Jump Mechanism;239
11.4.2.1;Classical Mechanics of a Spinning Particle;240
11.4.2.2;Reflection from a Flat Wall;241
11.4.2.3;Scattering by a Hard Sphere;242
11.4.2.4;Side Jump versus Skew Scattering;243
11.4.3;Intrinsic Mechanism;244
11.4.3.1;Spin Current of Bulk J=3/2 Holes;244
11.4.3.2;Intrinsic Mechanism for 2D Electrons and Holes;246
11.4.3.3;Spin Accumulation in the Ballistic Regime;246
11.5;Experiments;248
11.5.1;First Observation of the Spin Hall Effect;248
11.5.2;Spin Hall Effect for 2D Holes;249
11.5.3;Spin Hall Effect for 2D Electrons;250
11.5.4;Observation of the Inverse Spin Hall Effect in Metals;250
11.5.5;Room Temperature Spin Hall Effect in Semiconductors;251
11.6;Conclusion;252
11.7;The Generalized Kinetic Equation;252
11.8;References;254
12;Spin-Photogalvanics;257
12.1;Introduction. Phenomenological Description;257
12.1.1;Circular Photogalvanic Effect;257
12.1.2;Spin-Galvanic and Inverse Spin-Galvanic Effects;258
12.1.3;Pure Spin Photocurrents;259
12.1.4;Magneto-Photogalvanic Effects;259
12.2;Circular Photogalvanic Effect;259
12.2.1;Historical Background;259
12.2.2;Basic Experiments;260
12.2.3;Microscopic Model for Inter-Sub-Band Transitions;263
12.2.4;Relation to k-Linear Terms;263
12.2.5;Circular PGE Due to Inter-Sub-Band Transitions;263
12.2.6;Interband Optical Transitions;265
12.2.7;Spin-Sensitive Bleaching;266
12.3;Spin-Galvanic Effect;268
12.3.1;Microscopic Mechanisms;269
12.3.2;Spin-Galvanic Photocurrent Induced by the Hanle Effect;271
12.3.3;Spin-Galvanic Effect at Zero Magnetic Field;273
12.3.4;Determination of the Rashba/Dresselhaus Spin Splitting Ratio;274
12.4;Inverse Spin-Galvanic Effect;275
12.4.1;Spin-Flip Mediated Current-Induced Polarization;276
12.4.2;Precessional Mechanism;277
12.4.3;Current Induced Spin Faraday Rotation;278
12.4.4;Current Induced Polarization of Photoluminescence;279
12.5;Pure Spin Currents;280
12.5.1;Pure Spin Current Injected by a Linearly Polarized Beam;281
12.5.2;Pure Spin Currents Due to Spin-Dependent Scattering;283
12.5.2.1;Magneto-Gyrotropic Effects;285
12.6;Concluding Remarks;286
12.7;References;286
13;Spin Injection;290
13.1;Introduction;290
13.1.1;History;290
13.2;Theoretical Models of Spin Injection and Spin Accumulation;292
13.2.1;Heuristic Introduction;292
13.2.2;Microscopic Transport Model;296
13.2.3;Thermodynamic Theory of Spin Transport;297
13.2.3.1;Thermodynamic Equations of Motion;297
13.2.3.2;Boundary Conditions for Charge and Spin Diffusion;299
13.2.3.3;Detailed Model of an F / N Interface;299
13.2.3.4;Resistance Mismatch at an F / N Interface;302
13.2.4;Hanle Effect;303
13.3;Spin Injection Experiments in Metals;303
13.4;Spin Injection in Semiconductors;306
13.4.1;Optical Experiments;308
13.4.1.1;Spin Injection;308
13.4.1.2;Spin Dynamics and Lifetimes;311
13.4.2;Transport Experiments;312
13.4.2.1;Large Spin-Orbit Effects;312
13.4.2.2;Experimental Progress;313
13.5;Related Topics;316
13.6;References;317
14;Dynamic Nuclear Polarization and Nuclear Fields;319
14.1;Electron-Nuclear Spin System of the Semiconductor: Characteristic Values of Effective Fields and Spin Precession Frequencies;320
14.1.1;Zeeman Splitting of Spin Levels;320
14.1.2;Quadrupole Interaction;321
14.1.3;Hyperfine Interaction;321
14.1.3.1;Overhauser Field;322
14.1.3.2;The Field of Nuclear Spin Fluctuation;322
14.1.3.3;Knight Field;322
14.1.4;Nuclear Dipole-Dipole Interaction;323
14.2;Electron Spin Relaxation by Nuclei: from Short to Long Correlation Time;324
14.3;Dynamic Polarization of Nuclear Spins;326
14.3.1;Electron Spin Splitting in the Overhauser Field;327
14.3.2;Stationary States of the Electron-Nuclear Spin System in Faraday Geometry;329
14.3.3;Dynamic Polarization by Localized Electrons;330
14.3.4;Cooling of the Nuclear Spin System;332
14.3.5;Polarization of Nuclei by Excitons in Neutral Quantum Dots;334
14.3.6;Current-Induced Dynamic Polarization in Tunnel-Coupled Quantum Dots;335
14.3.7;Self-Polarization of Nuclear Spins;335
14.4;Dynamic Nuclear Polarization in Oblique Magnetic Field;336
14.4.1;Larmor Electron Spin Precession;337
14.4.2;Polarization of Electron-Nuclear Spin-System in an Oblique Magnetic Field;339
14.4.3;Bistability of the Electron-Nuclear Spin System in Structures with Anisotropic Electron g-Factor and Spin Relaxation Time;341
14.4.3.1;Bistability of Electron-Nuclear Spin System Induced by Anisotropy of Electron g-Factor;342
14.4.3.2;Bistability of the Electron-Nuclear Spin System, Induced by Anisotropy of Electron Spin Relaxation;342
14.5;Optically Detected and Optically Induced Nuclear Magnetic Resonances;343
14.5.1;Optically Detected Nuclear Magnetic Resonance;343
14.5.2;Multispin and Multiquantum NMR;343
14.5.2.1;Multispin resonances;343
14.5.3;Optically Induced NMR;345
14.6;Spin Conservation in the Electron-Nuclear Spin System of a Quantum Dot;347
14.6.1;Time Scales for Preservation of Spin Direction and Spin Temperature;347
14.6.2;A Guide to Interpretation of Experiments on ``Spin Memory'';348
14.7;Conclusions;352
14.8;References;353
15;Nuclear-Electron Spin Interactions in the Quantum Hall Regime;357
15.1;Introduction;358
15.1.1;The Quantum Hall Effects in a Nutshell;358
15.1.2;Electron Spin Phenomena in the Quantum Hall Effects;363
15.1.3;Nuclear Spins in GaAs-Based 2D Electron Systems;366
15.1.3.1;Hyperfine Coupling;367
15.1.3.2;Nuclear Spin Relaxation in High Magnetic Fields;369
15.1.3.3;Nuclear Spin Diffusion;370
15.2;Experimental Techniques;370
15.3;Nuclear Spin Phenomena in the Quantum Hall Regime;372
15.3.1;The Role of Disorder;372
15.3.2;Edge Channel Scattering;374
15.3.3;Skyrmions;377
15.3.4;Nuclear-Electron Spin Interactions at nu=2/3;379
15.3.4.1;Ising Ferromagnetism and Domains;379
15.3.5;Resistively Detected NMR at nu= 2/3;382
15.3.5.1;Current Induced Nuclear Spin Polarization;382
15.3.5.2;Storage Capability of Nuclear Spins;383
15.3.5.3;Nuclear Magnetometry Based on the nu2/3 Spin Transition;384
15.3.5.3.1;Example 1: Filling Factor Dependence of the Nuclear Spin Relaxation Rate;384
15.3.5.3.2;Example 2: Suppression of Skyrmion Enhanced Nuclear Spin Relaxation;385
15.3.5.3.3;Example 3: The Filling Factor Dependence of the Nuclear Spin Polarization;387
15.3.5.3.4;Other Examples;388
15.3.6;Composite Fermion Fermi Sea at nu=1/2;389
15.3.6.1;Spin Polarization of the Composite Fermion Fermi Sea;389
15.3.6.2;Nuclear Spin Relaxation at nu=1/2;391
15.3.7;Other Cases;392
15.3.7.1;The Breakdown Regime of the Quantum Hall Effect;392
15.3.7.2;The Wigner Crystal Phase of the 2D Electron System;392
15.3.7.3;Two Sub-Band Systems;393
15.3.7.4;Bilayer Systems;393
15.4;Summary and Outlook;394
15.5;References;394
16;Diluted Magnetic Semiconductors: Basic Physics and Optical Properties;399
16.1;Introduction;399
16.2;Band Structure of II-VI and III-V DMS;400
16.3;Exchange Interactions in DMS;402
16.3.1;s,p-d Exchange Interaction;402
16.3.1.1;s-d Exchange Interaction;402
16.3.1.2;p-d Exchange Interaction;403
16.3.1.3;Deviations from Local Exchange;403
16.3.2;d-d Exchange Interactions;404
16.3.2.1;Superexchange;404
16.3.2.2;Double Exchange;405
16.3.2.3;RKKY;405
16.4;Magnetic Properties;406
16.4.1;Undoped DMS;406
16.4.1.1;Paramagnetism and the Brillouin Function;406
16.4.1.2;Antiferromagnetism and the Modified Brillouin Function;407
16.4.2;Carrier-Induced Ferromagnetism;409
16.4.2.1;Zener Model;409
16.4.2.2;Role of the Valence Band;411
16.4.2.3;Disorder;411
16.5;Basic Optical Properties;412
16.5.1;Giant Zeeman Effect;412
16.5.1.1;Linear Approximation for the Spin-Carrier Interaction;412
16.5.1.2;Determination of Exchange Integrals;414
16.5.1.3;Deviations from the Simple Model;414
16.5.1.4;Other Magneto-Optical Spectroscopic Techniques;417
16.5.2;Optically Detected Ferromagnetism in II-VI DMS;418
16.5.3;Quantum Dots;420
16.5.4;Spin-Light Emitting Diodes;422
16.5.5;III-V Diluted Magnetic Semiconductors;422
16.6;Spin Dynamics;424
16.6.1;Electron Spin Relaxation Induced by s-d Exchange;425
16.6.2;Mn Spin Relaxation;425
16.6.2.1;Spin-Lattice Relaxation of Isolated Mn Spins;426
16.6.2.2;Spin-Lattice Relaxation via Mn Spin Clusters;426
16.6.2.3;Spin-Spin Relaxation;427
16.6.2.4;Spin Relaxation Assisted by Carriers;428
16.6.3;Collective Spin Excitations in CdMnTe Quantum Wells;429
16.6.3.1;Soft Precession Mode in p-Doped Quantum Wells;430
16.6.3.2;Mixed Modes in n-Doped Quantum Wells;431
16.7;Advanced Time-Resolved Optical Experiments;432
16.7.1;Carrier Spin Dynamics;433
16.7.2;Magnetization Dynamics;434
16.7.2.1;Magnetization Precession Induced by an Exchange Field;434
16.7.2.2;Demagnetization by Hot Carriers;435
16.8;References;437
17;Index;442