Henisch / Roy Silicon Carbide - 1968

Proceedings of the International Conference on Silicon Carbide, University Park, Pennsylvania, October 20-23, 1968
1. Auflage 2013
ISBN: 978-1-4831-5261-5
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, 378 Seiten, Web PDF

Silicon Carbide - 1968 presents the proceedings of the International Conference on Silicon Carbide held in University Park, Pennsylvania on October 20-23, 1968. The book covers papers about the perspectives on silicon carbide; several problems in the development of silicon carbide semiconductors, such as the control of crystal structure and analysis. The thermal properties of beta-silicon carbide from 20 to 2000 degrees and the influence of impurities on the growth of silicon carbide crystals in chemical reactions and by recrystallization are also discussed. The book then presents papers about silicon carbide single crystal growth using the Norton process; the principles of solution and traveling solvent growth of silicon carbide; the growth of silicon carbide from cobalt-silicon solutions; and the growth of silicon carbide from vapor by the Bridgman-Stockbarger method. Papers about the growth of crystals and epitaxial layers of beta silicon carbide; the heteroepitaxy of beta-silicon carbide employing liquid metals; some aspects of disorder in silicon carbide; and the dependence of physical properties on polytype structure are also considered. The book describes topics about the optical properties of polytypes of silicon carbide as well as the phase stability of silicon carbide against nitrogen. Other papers about the physical and electronic properties of silicon carbide are also discussed in the book. People involved in semiconductor industries will find the book helpful.

Autoren/Hrsg.

Henisch, H. K.

Roy, R.

Inhaltsverzeichnis

1;Front Cover;1
2;Silicon Carbide – 1968;2
3;Copyright Page;3
4;Table of Contens;6
5;OPENING REMARKS;5
6;CHAPTER 1. PERSPECTIVES ON SILICON CARBIDE;8
6.1;Acknowledgements;18
6.2;References;18
7;CHAPTER 2. PROBLEMS IN SILICON CARBIDE DEVICE DEVELOPMENT;20
7.1;Introduction;20
7.2;Crystal Growth;20
7.3;Alpha-Beta Relationship;28
7.4;Analysis;28
7.5;Materials of Construction;29
7.6;References;30
8;CHAPTER 3. THERMAL PROPERTIES OF ß-SILICON CARBIDE FROM 20 TO 2000°C;32
8.1;Introduction;32
8.2;Material Preparation;33
8.3;Mechanical Measurements;34
8.4;Density and Thermal Expansion;35
8.5;Enthalpy and Specific Heat;37
8.6;Thermal Diffusivity and Thermal Conductivity;37
8.7;Acknowledgements;39
8.8;References;39
9;CHAPTER 4. THE INFLUENCE OF IMPURITIES ON THE GROWTH OF SILICON CARBIDE CRYSTALS GROWN BY GAS-PHASE REACTIONS;40
9.1;Introduction;40
9.2;Enhancement of growth, and crystal structure;43
9.3;Vapour-Liquid-Solid Growth (V.L.S.);46
9.4;Acknowledgements;50
9.5;References;50
10;CHAPTER 5. THE INFLUENCE OF IMPURITIES ON THE GROWTH OF SILICON CARBIDE CRYSTALS BY RECRYSTALLIZATION;52
10.1;Introduction;52
10.2;Recrystallization Below 2000°C;53
10.3;The Influence of Nitrogen and of Ambient Pressures Higher than One Atmosphere;54
10.4;The Influence of Aluminium;56
10.5;The Influence of IIIB Elements;59
10.6;References;61
11;CHAPTER 6. SOME OBSERVATIONS ON SILICON CARBIDE SINGLE CRYSTAL GROWTH;64
11.1;Summary;72
11.2;Acknowledgments;72
11.3;References;72
12;CHAPTER 7. PRINCIPLES OF SOLUTION AND TRAVELLING SOLVENT GROWTH OF SILICON CARBIDE;74
12.1;Acknowledgment;78
12.2;References;78
13;CHAPTER 8. GROWTH OF SILICON CARBIDE FROM SOLUTION;80
13.1;Acknowledgements;90
13.2;References;90
14;CHAPTER 9. THE GROWTH OF SiC CRYSTALS FROM VAPOR BY THE BRIDGMAN-STOCKBARGER METHOD;92
14.1;Preparation of the SiC Nutrient;92
14.2;The Changes in Approach;95
14.3;The June 17-19 Sublimation Run;96
14.4;The Results of the June 17-19 Sublimation Run;98
14.5;Acknowledgments;102
14.6;References;102
15;CHAPTER 10. BETA SILICON CARBIDE;104
15.1;Background;104
15.2;Experimentai;105
15.3;Comparison Properties of Alpha and Beta SiC;108
15.4;Discussion;110
15.5;Conclusion;112
15.6;References;112
16;CHAPTER 11. HETEROEPITAXY OF BETA SILICON CARBIDE EMPLOYING LIQUID METALS;114
16.1;Introduction;114
16.2;Experimental Procedure;115
16.3;Discussion and Conclusions;123
16.4;Acknowledgements;124
16.5;References;124
17;CHAPTER 12. SOME ASPECTS OF DISORDER IN SILICON CARBIDE;126
17.1;Experimental Methods;127
17.2;Experimental Results;129
17.3;Discussion;132
17.4;Conclusions;134
17.5;Acknowledgements;135
17.6;References;135
18;CHAPTER 13. DEPENDENCE OF PHYSICAL PROPERTIES ON POLYTYPE STRUCTURE;136
18.1;Introduction;136
18.2;Large Zone Structure;138
18.3;Experimental Results;140
18.4;Correlation with "Percent h";144
18.5;References;145
19;CHAPTER 14. OPTICAL PROPERTIES OF POLYTYPES OF SiC: INTERBAND ABSORPTION, AND LUMINESCENCE OF NITROOEN-EXCITON COMPLEXES;148
19.1;Introduction;148
19.2;Absorption Spectrum;148
19.3;Exciton Recombination Radiation;151
19.4;Conclusions;158
19.5;References;158
20;CHAPTER 15. PHASE STABILITY OF SILICON CARBIDE IN THE TERNARY SYSTEM Si-C-N;160
20.1;Introduction;160
20.2;Nitride-Bonded Silicon Carbide;162
20.3;The Ternary System Si-C-N;163
20.4;Abrasive Power of a- and ß-SiC;171
20.5;References;172
21;CHAPTER 16. ELECTRONIC STRUCTURE AND OPTICAL SPECTRUM OF SILICON CARBIDE;174
21.1;Introduction;174
21.2;Cubic Silicon Carbide;175
21.3;2H Silicon Carbide (Wurtzite Structure);179
21.4;Location of Principal and Subsidiary Band Edges in Various SiC Polytypes;181
21.5;Acknowledgment;183
21.6;References;185
22;CHAPTER 17. FABRICATION OF SILICON CARBIDE LIGHT EMITTING DIODES;186
22.1;Introduction;186
22.2;Silicon Carbide Crystal Growing;186
22.3;Grinding and Polishing of Crystals;187
22.4;Diffusion of Luminescent Layers and p-Layers;188
22.5;Properties of Diffused Crystals;189
22.6;Fabrication of the Diodes from Diffused Crystals;190
22.7;Performance of SiC Diodes;191
22.8;Acknowledgements;192
22.9;References;192
23;CHAPTER 18. THE FABRICATION OF SiC ELECTROLUMINESCENT DISMAYS;194
23.1;Introduction;194
23.2;Solution Growth of p-n Junctions;195
23.3;Device Fabrication;197
23.4;Blectrical Contacts;200
23.5;Device Characteristics;202
23.6;Acknowledgements;204
23.7;References;204
24;CHAPTER 19. THE ETCHING OF SILICON CARBIDE;206
24.1;Introduction;206
24.2;Structure of SiC;207
24.3;Mechanical Treatment;207
24.4;Chemical Etching;208
24.5;Electrolytic Etching;213
24.6;Alloy Etching;214
24.7;Cathodic Bombardment;214
24.8;Surface Cleanness;214
24.9;Dislocations;215
24.10;Conclusions;216
24.11;References;217
25;CHAPTER 20. ELECTRICAL PROPERTIES OF SiC DEVICES;218
25.1;Single Crystal Semiconductor SiC;218
25.2;Growth of Single Crystal SiC;218
25.3;Dopant Diffusion in SiC;219
25.4;Fabrication Techniques;220
25.5;Silicon Carbide Power Diodes;222
25.6;SiC p-n Junction Detectors;224
25.7;Conclusions;227
25.8;Acknowledgement;228
25.9;References;228
26;CHAPTER 21. PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE IN ALPHA SILICON CARBIDE;230
26.1;Introduction;230
26.2;Photoluminescence;231
26.3;SiC Light-emitting Diodes;232
26.4;Acknowledgments;237
26.5;References;237
27;CHAPTER 22. LUMINESCENCE OF SILICON CARBIDE WITH DIFFERENT IMPURITIES;238
27.1;Introduction;238
27.2;Crystal Doping Methods;239
27.3;SiC(B) Luminescence;241
27.4;SiC (Be) Luminescence;244
27.5;Conclusion;247
27.6;References;248
28;CHAPTER 23. THE TEMPERATURE DEPENDENCE OF PHOTOELECTRIC EFFECTS IN SILICON CARBIDE;250
28.1;Introduction;250
28.2;Photo-emf;250
28.3;Photoconductivity;251
28.4;Acknowledgment;254
28.5;References;254
29;CHAPTER 24. THE E.S.R. PROPERTIES OF ELECTRON IRRADIATED HEXAGONAL AND CUBIC SILICON CARBIDE;256
29.1;Introduction;256
29.2;Experimental Procedure;258
29.3;Experimental Results;259
29.4;Discussion of Results;262
29.5;Acknowledgment;265
29.6;References;265
30;CHAPTER 25. MAGNETIC RESONANCE IN 6H SiC;268
30.1;Introduction;268
30.2;Nitrogen doped silicon carbide;269
30.3;Boron-doped 6H SiC;274
30.4;Acknowledgement;279
30.5;References;279
31;CHAPTER 26. ACTIVATION ANALYSIS OF THE IMPURITIES IN SILICON CARBIDE;280
31.1;Introduction;280
31.2;Activation Analysis of Siliconcarbide;282
31.3;Activation with Thermal Neutrons (T.N.A.A.);282
31.4;Activation with charged particles (C.P.A.A.);282
31.5;Decomposition and Chemical Treatment;285
31.6;Other Methods of Analysis;286
31.7;Experimental;287
31.8;Results and Discussion;289
31.9;Acknowledgement;289
31.10;References;289
32;CHAPTER 27. THE EPITAXIAL GROWTH OF BETA SILICON CARBIDE;292
32.1;Introduction;292
32.2;Experimental Procedure;293
32.3;Results And Discussion;293
32.4;Conclusion;297
32.5;Acknowledgement;298
32.6;References;298
33;CHAPTER 28. THE PROPERTIES OF SOME SiC ELECTROLUMINESCENT DIODES;300
33.1;Introduction;300
33.2;Preparation of SiC Lamps;300
33.3;Experimental Procedure;301
33.4;Results;302
33.5;Discussion of Results;306
33.6;Conclusions;309
33.7;Acknowledgement;309
33.8;References;309
34;CHAPTER 29. SILICON CARBIDE COED CATHODES;310
34.1;Introduction;310
34.2;Fabrication of Cathodes;311
34.3;Cathode Characteristics;312
34.4;Advantages and Potential Applications;317
34.5;Acknowledgement;317
34.6;References;317
35;CHAPTER 30. FORMATION OF CRISTOBALITE FROM SILICON CARBIDE;318
35.1;Introduction;318
35.2;Literature;318
35.3;Experimental;320
35.4;Testing Methods;321
35.5;Results;321
35.6;Final Remarks;326
35.7;References;326
36;CHAPTER 31. EQUILIBRIUM COMPUTATIONS ON THE C-Cl-H-Si SYSTEM;328
36.1;Acknowledgements;336
36.2;References;337
37;CHAPTER 32. SILICON CARBIDE AS A FISSION PRODUCT BARRIER IN NUCLEAR FUELS;338
37.1;Silicon Carbide and the Design of Fuel Particles;338
37.2;The Deposition of the Silicon Carbide Layer;341
37.3;Conclusion;345
37.4;References;346
38;CHAPTER 33. EPITAXIAL GROWTH OF ß-SILICON CARBIDE;348
38.1;Introduction;348
38.2;Apparatus and Procedure;349
38.3;Experimental Results;350
38.4;1. Hydrogen Etch Rates;350
38.5;2. Structure and Morphology of Vapor Deposited ß-SiC;352
38.6;3. Vapor Growth Kinetics;355
38.7;4. p/n Junction Growth by Vapor Deposition;358
38.8;5. Diode Characteristics and Electroluminescence;358
38.9;Acknowledgment;359
38.10;References;360
39;CHAPTER 34. ELECTRONIC PROPERTIES OF N-TYPE ß-SILICON CARBIDE CRYSTALS GROWN FROM SOLUTION;362
39.1;Introduction;362
39.2;Experimental;362
39.3;Results;365
39.4;Discussion;366
39.5;Summary;369
39.6;Acknowledgments;369
39.7;References;370
40;NUMERICAL DATA;372
41;AUTHOR INDEX;378