Deep Centers in Semiconductors

1. Auflage 1992
ISBN: 978-2-88124-562-6
Verlag: CRC Press

Buch, Englisch, 944 Seiten, Format (B × H): 152 mm x 229 mm, Gewicht: 1442 g

Examines several key semiconductor deep centers, all carefully chosen to illustrate a variety of essential concepts. A deep center is a lattice defect or impurity that causes very localized bound states and energies deep in the band gap. For each deep center chosen, a scientist instrumental in its development discusses the theoretical and experimental techniques used to understand that center. The second edition contains four new sections treating recent developments, including a chapter on hydrogen in crystalline semiconductors.

Zielgruppe

Academic and Postgraduate

Autoren/Hrsg.

Pantelides, Sokrates T.

Fachgebiete

• Naturwissenschaften Physik Thermodynamik Festkörperphysik, Kondensierte Materie
• Naturwissenschaften Physik Elektromagnetismus Elektrizität, Elektrodynamik
• Naturwissenschaften Physik Elektromagnetismus Magnetismus
• Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik

Inhaltsverzeichnis

Perspectives in the Past Present and Future, Chalcogen Impurities in Silicon, The Lattice Vacancy in Silicon, Oxygen and Oxygen Associates in Gallium, The Two Dominant Recombination Centers, The MidGap Donor Level EL2 in Gallium, DX Centers in IIIV Alloys, Iron Impurity Centers in IIIV Semiconductors, Chromium in Gallium Arsenide, The Optoelectronic Properties of Copper, Hydrogen in Crystalline Semiconductors

Über Autor(innen)

Sokrates T. Pantelides (Author)