Pearton / Ltd Hydrogen in Compound Semiconductors

Erscheinungsjahr 1993
ISBN: 978-3-0357-0482-2
Verlag: Trans Tech Publications
Format: PDF
Kopierschutz: 0 - No protection

E-Book, Englisch, 546 Seiten

State-of-the-art reviews on all the major areas of interest are brought together in this book, namely the role of hydrogen during epitaxial growth, its entry into the material during processing, its subsequent diffusivity and bonding with dopants, other impurities or defects, its effect on device performance and reliability and positive uses for hydrogen in passivating surfaces.

Autoren/Hrsg.

Pearton, S.J.

Ltd, Trans Tech Publications

Inhaltsverzeichnis

Hydrogen in Compound Semiconductors-Introduction
The Role of Hydrogen in UHV Growth of III-V Semiconductors
The Role of Hydrogen in the Growth of III-V Compound Semiconductors by OMVPE
Role of Hydrogen in Semiconductor, Dielectric and Metal Deposition onto InP by Means of Rapid Thermal Low Pressure Metalorganic Chemical Vapor Deposition
Hydrogenation of III-V Semiconductors during Processing
Sources of Hydrogen in III-V Device Processing
Plasma Passivation of III-V Semiconductor Surfaces
Hydrogen Implantation in III-V Compound Semiconductors and its Redistribution with Annealing
Hydrogen Diffusion in Compound Semiconductors
Vibrational Spectroscopy of Dopant-Hydrogen Complexes in III-V Semiconductors

Hydrogen in Crystalline Gallium Phosphide
Hydrogen in Ternary and Quaternary Materials
Shallow Levels Passivation in Implanted and Plasma Hydrogenated Compound Semiconductors
Theoretical and µSR Studies Related to Hydrogen in Compound Semiconductors
Hydrogen in III-V Compound Semiconductors
Spectroscopy of Hydrogen-Related Defects in III-V Semiconductors by Nuclear Techniques
Hydrogen in III-V Device Structures