E-Book, Englisch, 217 Seiten, eBook
ISBN: 978-3-319-31653-6
Verlag: Springer International Publishing
Format: PDF
Kopierschutz: Wasserzeichen (»Systemvoraussetzungen)
This book provides a single-source reference to the state-of-the art in
tunneling field effect transistors (TFETs). Readers will learn the TFETs
physics from advanced atomistic simulations, the TFETs fabrication process and
the important roles that TFETs will play in enabling integrated circuit designs
for power efficiency.
Zhang / Chan
Tunneling Field Effect Transistor Technology jetzt bestellen!
tunneling field effect transistors (TFETs). Readers will learn the TFETs
physics from advanced atomistic simulations, the TFETs fabrication process and
the important roles that TFETs will play in enabling integrated circuit designs
for power efficiency.
Zielgruppe
Research
Autoren/Hrsg.
Weitere Infos & Material
Steep
Slope Devices and TFETs.- Tunnel-FET
Fabrication and Characterization.- Compact Models of TFETs.- Challenges and Designs of TFET for Digital
Applications.- Atomistic Simulations of Tunneling FETs.- Quantum Transport
Simulation of III-V TFETs with Reduced-Order
k
·
p
Method.- Carbon Nanotube TFETs: Structure
Optimization with Numerical Simulation.
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