Compact Modeling

Principles, Techniques and Applications
2010
ISBN: 978-94-007-9324-8
Verlag: Springer Netherlands

Buch, Englisch, 527 Seiten, Previously published in hardcover, Format (B × H): 155 mm x 235 mm, Gewicht: 820 g

Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.

Zielgruppe

Research

Autoren/Hrsg.

Gildenblat, Gennady

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise
• Naturwissenschaften Chemie Analytische Chemie Instrumentelle Analytik, Chromatographie

Inhaltsverzeichnis

Compact Models of MOS Transistors.- Surface-Potential-Based Compact Model of Bulk MOSFET.- PSP-SOI: A Surface-Potential-Based Compact Model of SOI MOSFETs.- Benchmark Tests for MOSFET Compact Models.- High-Voltage MOSFET Modeling.- Physics of Noise Performance of Nanoscale Bulk MOS Transistors.- Compact Models of Bipolar Junction Transistors.- to Bipolar Transistor Modeling.- Mextram.- The HiCuM Bipolar Transistor Model.- Compact Models of Passive Devices.- Integrated Resistor Modeling.- The JUNCAP2 Model for Junction Diodes.- Surface-Potential-Based MOS Varactor Model.- Modeling of On-chip RF Passive Components.- Modeling of Multiple Gate MOSFETs.- Multi-Gate MOSFET Compact Model BSIM-MG.- Compact Modeling of Double-Gate and Nanowire MOSFETs.- Statistical Modeling.- Modeling of MOS Matching.- Statistical Modeling Using Backward Propagation of Variance (BPV).