High-k Gate Dielectrics for CMOS Technology

1. Auflage 2012
ISBN: 978-3-527-33032-4
Verlag: WILEY-VCH

Buch, Englisch, 558 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 1240 g

A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological
viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these
materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies.

Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections
with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.

Autoren/Hrsg.

He, Gang

Sun, Zhaoqi

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Elektronische Baugruppen, Elektronische Materialien
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik

Inhaltsverzeichnis

- Scaling and Limitation of Si-based CMOS
- Issues in High-k Gate Dielectrics and Its Stack Interfaces
- UV Engineering of High-k Thin Films
- Atomic Layer Deposition Process of Hf-based high-k Gate Dielectric Film on Si Substrate
- Structural and Electrical Characteristics of Alternative High-k Dielectrics for CMOS Applications
- Hygroscopic Tolerance and Permittivity Enhancement of Lanthanum Oxide (La2O3 ) for High-k Gate Insulators
- Characterization of High-k Dielectrics Internal Structure by X-Ray Spectroscopy and Reflectometry
- Rare Earth Oxides as High-k Gate Dielectrics for Advance Device Architectures
- The Interaction Challenges with Novel Materials in Developing High Performance and Low Leakage High-¿ /Metal Gate CMOS Tranistors
- Interfacial Dipole Effects in High-k Gate Stacks
- Metal Gate Electrode for Advanced CMOS Application
- Metal-Gate/High-¿ CMOS Evolution from Si to Ge Platform
- Theoretical Progress on GaAs Surface and GaAs/High-¿ Interface
- III-V MOSFETs with ALD High-k Gate Dielectrics
- High-k Dielectrics in Ferroelectric Gate Field Effect Transistor for Nonvolatile Memory Applications
- Rare Earth Oxides as High-k Gate Dielectrics for Advance Device Architectures
- The Interaction Challenges with Novel Materials in Developing High Performance and Low Leakage High-¿ /Metal Gate CMOS Transistors

PREFACE

PART ONE: Scaling and Challenge of Si-based CMOS

SCALING AND LIMITATION OF SI-BASED CMOS

Introduction

Scaling and Limitation of CMOS
Toward Alternative Gate Stacks Technology
Improvements and Alternative to CMOS Technologies

Potential Technologies Beyond CMOS

Conclusions

PART TWO: High-k Deposition and Materials Characterization

ISSUES IN HIGH-K GATE DIELECTRICS AND ITS STACK INTERFACES

Introduction
High-k Dielectrics

Metal Gates

Integration of High-k Gate Dielectrics with Alternative Channel Materials

Summary

UV ENGINEERING OF HIGH-K THIN FILMS

Introduction

Gas Discharge Generation of UV (Excimer) Radiation

Excimer Lamp Sources Based on Silent Discharges

Predeposition Surface Cleaning for High-k Layers

UV Photon Deposition of Ta2O5 Films
Photoinduced Deposition of Hf1_xSixOy Layers

Summary

ATOMIC LAYER DEPOSITION PROCESS OF HF-BASED HIGH-K GATE DIELECTRIC FILM ON SI SUBSTRATE

Introduction

Precursor Effect on the HfO2 Characteristics

Doped and Mixed High-k

Summary

STRUCTURAL AND ELECTRICAL CHARACTERISTICS OF ALTERNATIVE HIGH-K DIELECTRICS FOR CMOS APPLICATIONS
Introduction

Requirement of High-k Oxide Materials
Rare-Earth Oxide as Alternative Gate Dielectrics

Structural Characteristics of High-k RE Oxide Films

Electrical Characteristics of High-k RE Oxide Films
Conclusions and Perspectives

HYGROSCOPIC TOLERANCE AND PERMITTIVITY ENHANCEMENT OF LANTHANUM OXIDE (LA2O3) FOR HIGH-K GATE INSULATORS

Introduction

Hygroscopic Phenomenon of La2O3 Films

Low Permittivity Phenomenon of La2O3 Films

Hygroscopic Tolerance Enhancement of La2O3 Films
Hygroscopic Tolerance Enhancement of La2O3 Films by Ultraviolet Ozone Treatment

Thermodynamic Analysis of Moisture Absorption Phenomenon in High-k Gate Dielectrics

Permittivity Enhancement of La2O3 Films by Phase Control

Summary

CHARACTERIZATION OF HIGH-K DIELECTRIC INTERNAL STRUCTURE BY X-RAY SPECTROSCOPY AND REFLECTOMETRY: NEW APPROACHES TO INTERLAYER IDENTIFICATION AND ANALYSIS

Introduction

Chemical Bonding and Crystalline Structure of Transition Metal Dielectrics

NEXAFS Investigation of Internal Structure

Studying the Internal Structure of High-K Dielectric Films by Hard X-Ray Photoelectron Spectroscopy and TEM

Studying the Internal Structure of High-K Dielectric Films by X-ray Reflectometry

HIGH-K INSULATING FILMS ON SEMICONDUCTORS AND METALS: GENERAL TRENDS IN ELECTRON BAND ALIGNMENT
Introduction

Band Offsets and IPE Spectroscopy

Silicon/Insulator Band Offsets

Band Alignment at Interfaces of High-Mobility Semiconductors

Metal/Insulator Barriers

Conclusions

PART THREE: Challenge in Interface Engineering and Electrode

INTERFACE ENGINEERING IN THE HIGH-K DIELECTRIC GATE STACKS

Introduction

High-k Oxide/Si Interfaces
Metal Gate/High-k Dielectric Interfaces

Chemical Tuning of Band Alignments for Metal Gate/High-k Oxide Interfaces

Summary and Discussion

INTERFACIAL DIPOLE EFFECTS ON HIGH-K GATE STACKS

Introduction

Metal Gate Consideration

Interfacial Dipole Effects in High-k Gate Stacks

Observation of the Interfacial Dipole in High-k Stacks

Summary

METAL GATE ELECTRODE FOR ADVANCED CMOS APPLICATION

The Scaling and Improved Performance of MOSFET Devices

Urgent Issues about MOS Gate Materials for Sub-0.1 mm Device Gate Stack

New Requirements of MOS Gate Materials for Sub-0.1 mm Device Gate Stack

Summary

PART FOUR: Development in non-Si-based CMOS technology

METAL GATE/HIGH-K CMOS EVOLUTION FROM SI TO GE PLATFORM
Introduction
High-k/Si CMOSFETs

High-k/Ge CMOSFETs

Ge Platform
Conclusions

THEORETICAL PROGRESS ONGAAS (001)SURFACE ANDGAAS/HIGH-K INTERFACE

Introduction
Computational Method
GaAs Surface Oxidation and Passivation

Origin of Gap States at the High-k/GaAs Interface and Interface Passivation

Conclusions

III - V MOSFETS WITH ALD HIGH-K GATE DIELECTRICS
Introduction
Buried Channel InGaAs MOSFETs

Summary

PART FIVE: High-k Application in Novel Devices

HIGH-K DIELECTRICS IN FERROELECTRIC GATE FIELD EFFECT TRANSISTORS FOR NONVOLATILE MEMORY APPLICATIONS

Introduction

Overview of High-k Dielectric Studies for FeFET Applications

Developing of HfTaO Buffer Layers for FeFET Applications

Summary

RARE-EARTH OXIDES AS HIGH-K GATE DIELECTRICS FOR ADVANCED DEVICE ARCHITECTURES

Introduction

Key Challenges for High-k Dielectrics

Rare-Earth Oxides as High-k Dielectrics

High-k Dielectrics in Advanced Device Architecture

PART SIX: Challenge and Future Directions

THE INTERACTION CHALLENGES WITH NOVEL MATERIALS IN DEVELOPING HIGH-PERFORMANCE AND LOW-LEAKAGE HIGH-K/METAL GATE CMOS TRANSISTORS

Introduction

Traditional CMOS Integration Processes

High-k/Metal Gate Integration Processes
Mobility

Metal Electrodes and Effective Work Function

Tinv Scaling and Impacts on Gate Leakage and Effective Work Function

Ambients and Oxygen Vacancy-Induced Modulation of Threshold Voltage

Reliability
Conclusions

Über Autor(innen)

Gang He is Professor at the School of Physics and Materials Science of the Anhui University, China. He obtained his academic degrees from the Institute of Solid State Physics of the Chinese Academy of Sciences. His research interests and efforts cover the areas of the preparation,
characterization, fundamental understanding and associated applications of high-k gate dielectric thin films in novel devices. Due to his outstanding performance in research work, Professor Gang He won a scholarship award from the Chinese Academy of Sciences in 2005 and a grant of the Japanese Society for the Promotion of Science in 2006.

Zhaoqi Sun is the President of the School of Physics and Materials Science at the Anhui University. He graduated from Sichuan University and obtained his academic degrees from the University of Science and Technology of China. His research is focused on functional thin film materials for applications in microelectronics and solar cells. Professor Zhaoqi Sun has authored more than 140 scientific publications
and has received numerous scientific awards, including the Science and Technology Award of the AnhuiProvince and an Outstanding Teacher Award.