Jenkins / Jarvis / Ashhurst Basic Principles of Electronics

Volume 2: Semiconductors
1. Auflage 2014
ISBN: 978-1-4831-8667-2
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, 264 Seiten, Web PDF

Basic Principles of Electronics, Volume 2: Semiconductors focuses on the properties, applications, and characteristics of semiconductors. The publication first elaborates on conduction in the solid state, conduction and heat, and semiconductors. Discussions focus on extrinsic or impurity semiconductors, electrons and holes, effect of temperature on the conductivity, mean free path, Joule heating effect, 'vacancies' in crystals, and Drude's theory of metallic conduction. The text then ponders on semiconductor technology and simple devices, transistor, and transistor production and characteristics. Topics include strain gauges, thermistors, thermoelectric semiconductors, crystal preparation, photoconductors, and the Hall effect. The book elaborates on special devices, processes, and uses, common transistor circuitry, and a low-frequency equivalent circuit for common base, including radiation detection, optoelectronics, field effect transistors, sonar amplifier, oscillators, and multi-stage amplifiers. The publication is highly recommended for technical college students and researchers wanting to study semiconductors.

Autoren/Hrsg.

Jenkins, J.

Jarvis, W. H.

Ashhurst, W.

Inhaltsverzeichnis

1;Front Cover;1
2;Semiconductors;4
3;Copyright Page;5
4;Table of Contents;8
5;Dedication;6
6;PREFACE;12
7;CHAPTER 1. CONDUCTION IN THE SOLID STATE;14
7.1;1.1. HISTORICAL;14
7.2;1.2. "VACANCIES" IN CRYSTALS;16
7.3;1.3. DRUDE'S THEORY OF METALLIC CONDUCTION;18
7.4;1.4. THE PARADOX;21
7.5;1.5. MEAN FREE TIME;22
7.6;QUESTIONS;24
8;CHAPTER 2. CONDUCTION AND HEAT;26
8.1;2.1. SOME KINETIC THEORY;27
8.2;2.2. THE MEAN FREE PATH;29
8.3;2.3. THE JOULE HEATING EFFECT;30
8.4;2.4. THE FAILURE OF DRUDE'S THEORY;31
8.5;2.5. THE WORK OF WIEN;32
8.6;2.6. THE MODERN PICTURE OF RESISTIVITY;34
8.7;2.7. THE EFFECT OF TEMPERATURE ON THE CONDUCTIVITY;35
8.8;QUESTIONS;38
9;CHAPTER 3. SEMICONDUCTORS;39
9.1;3.1. HISTORICAL;39
9.2;3.2. CLASSIFICATION OF MATERIALS;41
9.3;3.3. ELECTRONS AND HOLES;43
9.4;3.4. EXTRINSIC OR IMPURITY SEMICONDUCTORS;46
9.5;QUESTIONS;50
10;CHAPTER 4. SEMICONDUCTOR TECHNOLOGY AND SIMPLE DEVICES;52
10.1;4.1. TERMINOLOGY;52
10.2;4.2. CRYSTAL PREPARATION;53
10.3;4.3. THE MATERIALS IN USE;55
10.4;4.4. PHOTOCONDUCTORS;56
10.5;4.5. THE HALL EFFECT: MAGNETOMETERS;58
10.6;4.6. THERMOELECTRIC SEMICONDUCTORS;61
10.7;4.7. THERMISTORS;63
10.8;4.8. STRAIN GAUGES;63
10.9;QUESTIONS;68
11;CHAPTER 5. THE p–n JUNCTION;70
11.1;5.1. SEMICONDUCTOR JUNCTIONS;70
11.2;5.2. DIFFUSION IN A SEMICONDUCTOR;72
11.3;5.3. THE POTENTIAL BARRIER;74
11.4;5.4. THE p-n JUNCTION WITH FORWARD AND REVERSE BIAS;76
11.5;5.5. THE RESISTANCE OF A p-n JUNCTION;80
11.6;QUESTIONS;82
12;CHAPTER 6. p–n JUNCTION DEVICES;85
12.1;6.1. PRACTICAL JUNCTIONS;85
12.2;6.2. RECTIFIERS;88
12.3;6.3. DIODES;91
12.4;6.4. COMPARISON OF p-n JUNCTION DIODES WITH THERMIONIC VALVE DIODES;94
12.5;6.5. THE VARACTOR DIODE;95
12.6;6.6. THE ZENER DIODE;96
12.7;6.7. PHOTOCELLS;97
12.8;QUESTIONS;101
13;CHAPTER 7. THE TRANSISTOR;105
13.1;7 1. THE PRINCIPLE OF THE JUNCTION TRANSISTOR;106
13.2;7.2. THE CURRENT GAIN, a;112
13.3;QUESTIONS;115
14;CHAPTER 8. TRANSISTOR PRODUCTION AND CHARACTERISTICS;116
14.1;8.1. TRANSISTOR PRODUCTION;116
14.2;8.2. TRANSISTOR CHARACTERISTICS;129
14.3;QUESTIONS;137
15;CHAPTER 9. THE TRANSISTOR AS A CIRCUIT ELEMENT;139
15.1;9.1. A LOW-FREQUENCY EQUIVALENT CIRCUIT FOR COMMON BASE;139
15.2;9.2. AMPLIFICATION IN COMMON BASE CONNECTION;140
15.3;9.3. A LOW-FREQUENCY EQUIVALENT CIRCUIT FOR COMMON EMITTER;141
15.4;9.4. THE COMMON EMITTER AMPLIFIER;144
15.5;9.5. DETERMINATION OF PARAMETERS FROM TRANSISTOR CHARACTERISTICS;149
15.6;9.6. THE LOAD LINE;155
15.7;9.7. BIAS CIRCUITS;157
15.8;9.8. DESIGN OF A BIAS CIRCUIT;162
15.9;9.9. ALTERNATIVE TRANSISTOR CONFIGURATIONS;166
15.10;QUESTIONS;171
16;CHAPTER 10. COMMON TRANSISTOR CIRCUITRY;173
16.1;10.1. MULTI-STAGE AMPLIFIERS;173
16.2;10.2. POWER OUTPUT STAGES;180
16.3;10.3. TUNED AMPLIFIERS;186
16.4;10.4. OSCILLATORS;189
16.5;10.5. THE TRANSISTOR SWITCH;194
16.6;10.6. D.C. AMPLIFIERS;197
16.7;10.7. INVERTERS;200
16.8;QUESTIONS;204
17;CHAPTER 11. SPECIAL DEVICES, PROCESSES AND USES;208
17.1;11.1. HETEROJUNCTIONS;208
17.2;11.2. SONAR AMPLIFIER;210
17.3;11.3. RADIATION DETECTION;210
17.4;11.4. POWER CONTROL;211
17.5;11.5. MICROWAVE DEVICES;216
17.6;11.6. OPTO-ELECTRONICS;220
17.7;11.7. THE UNIJUNCTION;225
17.8;11.8. FIELD EFFECT TRANSISTORS;227
17.9;11.9. MICROELECTRONICS;232
17.10;QUESTIONS;241
18;APPENDIX I: THE h-PARAMETERS;243
19;APPENDIX II: RELATIONSHIP BETWEEN h AND T PARAMETERS FOR COMMON EMITTER CONFIGURATION;246
20;APPENDIX III: INPUT AND OUTPUT RESISTANCES AND GAINS FOR GROUNDED EMITTER TRANSISTOR, IN TERMS OF h-PARAMETERS;249
21;APPENDIX IV: CLASSIFICATION OF SEMICONDUCTOR TYPES;253
22;APPENDIX V: PRACTICAL PRECAUTIONS WITH TRANSISTORS;255
23;APPENDIX VI: SYMBOLS USED IN THE TEXT;258
24;APPENDIX VII: IMPURITY SEMICONDUCTORS;261
25;BIBLIOGRAPHY;263
26;INDEX TO SECTIONS;264