Nanowire Field Effect Transistors: Principles and Applications

Softcover Nachdruck of the original 1. Auflage 2014
ISBN: 978-1-4939-4572-6
Verlag: Springer

Buch, Englisch, 290 Seiten, Paperback, Format (B × H): 155 mm x 235 mm, Gewicht: 4511 g

“Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET.
During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes.
Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.

Zielgruppe

Professional/practitioner

Autoren/Hrsg.

Jeong, Yoon-Ha

Kim, Dae Mann

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Transistoren

Inhaltsverzeichnis

Quantum Wire and Sub-Bands.- Carrier Concentration and Transport.- P-N Junction Diode: I-V Behavior and Applications.- Silicon Nanowire Field Effect Transistor.- Fabrication of Nanowires and their Applications.- Characterization of Nanowire Devices under Electrostatic Discharge Stress Conditions.- Green Energy Devices.- Nanowire Field Effect Transistors in Optoelectronics.- Nanowire BioFETs: An Overview.- Lab On a Wire: Application of Silicon Nanowires for Nanoscience and Biotechnology.- Nanowire FET Circuit Design – An Overview.