Epitaxial Growth of III-Nitride Compounds

Computational Approach
Softcover Nachdruck of the original 1. Auflage 2018
ISBN: 978-3-030-09542-0
Verlag: Springer International Publishing

Buch, Englisch, Band 269, 223 Seiten, Previously published in hardcover, Format (B × H): 155 mm x 235 mm, Gewicht: 365 g

Reihe: Springer Series in Materials Science

This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds.

Zielgruppe

Research

Autoren/Hrsg.

Kangawa, Yoshihiro

Matsuoka, Takashi

Fachgebiete

• Naturwissenschaften Physik Physik Allgemein Theoretische Physik, Mathematische Physik, Computerphysik
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
• Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik
• Naturwissenschaften Physik Thermodynamik Festkörperphysik, Kondensierte Materie
• Technische Wissenschaften Verfahrenstechnik | Chemieingenieurwesen | Biotechnologie Technologie der Oberflächenbeschichtung

Inhaltsverzeichnis

1. Introduction

2. Computational methods

2.1 Ab initio calculations

2.2 Empirical interatomic potentials

2.3 Monte Carlo simulations

3. Fundamental properties of III-nitrides

3.1 Crystal structure

3.2 Band structure

3.3 Miscibility (InGaN and etc.)

3.4 Dislocation core structure

4. Growth processes

4.1 GaN

4.1.1 Surface structures

4.1.2 Adsorption-desorption behavior

4.1.3 Fundamental growth processes

4.1.4 Doping

4.1.5 Polarity dependence (nonpolar & semipolar orientations)

4.2 InN

4.2.1 Surface structures

4.2.2 Adsorption-desorption behavior

4.2.3 Fundamental growth processes

4.2.4 Polarity dependence (nonpolar & semipolar orientations)

4.3 AlN

4.3.1 Surface structures

4.3.2 Adsorption-desorption behavior

4.3.3 Fundamental growth processes

4.3.4 Polarity depend

ence (nonpolar & semipolar orientations) 4.4 InGaN

4.4.1 Surface structures

4.4.2 Adsorption-desorption behavior

4.4.3 Fundamental growth processes

4.4.5 Polarity dependence (nonpolar & semipolar orientations)

4.5 Nitridation

5. Novel behaviour of thin films

5.1 Structural metastability (4H-AlN on SiC, c-GaN)

5.2 Segregation (InGaN, GaNAs)

5.3 Dislocation formation

5.4 Epitaxial relationship

6. Summary

Über Autor(innen)

Takashi Matsuoka received his PhD degree in Engineering from Hokkaido University, Sapporo, Japan and has been a Professor at the Institute for Materials Research at Tohoku University, Sendai, Japan since 2005. Having worked at the NTT from 1978 to 2005, he developed a single-longitudinal mode laser diode and proposed the InGaAlN system and the epitaxial growth of a single crystalline InGaN layer for blue LEDs.

Yoshihiro Kangawa has been an Associate Professor at the Research Institute for Applied Mechanics (RIAM) of Kyushu University, Fukuoka, Japan since 2005. He received his Doctor of Engineering from Kyushu University and was a research associate at Gakushuin University, Tokyo, Japan from 2000 to 2002. He subsequently served as a research associate at the Department of Applied Chemistry at Tokyo University of Agriculture and Technology from 2002 to 2004. His research is concerned with theoretical investigation of the crystal growth mechanism, e.g. using ab initio-based approaches and thermodynamic analysis.