Buch, Englisch, Band 52, 269 Seiten, HC runder Rücken kaschiert, Format (B × H): 160 mm x 241 mm, Gewicht: 6083 g
Characterization Methods, Process and Materials Impact, DC and AC Modeling
Buch, Englisch, Band 52, 269 Seiten, HC runder Rücken kaschiert, Format (B × H): 160 mm x 241 mm, Gewicht: 6083 g
Reihe: Springer Series in Advanced Microelectronics
ISBN: 978-81-322-2507-2
Verlag: Springer India
Zielgruppe
Research
Autoren/Hrsg.
Weitere Infos & Material
Introduction: Bias Temperature Instability (BTI) in N and P Channel MOSFETs.- Characterization Methods for BTI Degradation and Associated Gate Insulator Defects.- Physical Mechanism of BTI Degradation – Direct Estimation of Trap Generation and Trapping.- Physical Mechanism of BTI Degradation –Modeling of Process and Material Dependence.- Reaction-Diffusion Model.- Modeling of DC and AC NBTI Degradation and Recovery for SiON and HKMG MOSFETs.- Index.