Buch, Englisch, 88 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 250 g
ISBN: 978-0-87849-834-5
Verlag: Trans Tech Publications
The addition of supersaturated carbon to silicon or silicon-germanium thin films leads to a new class of semiconducting materials. This new material can alleviate some of the constraints on strained Si1-xGex and may help to open up new fields of device applications for heteroepitaxial Si-based systems. Basic growth problems, as well as the mechanical and electrical properties of Si1-yCy and Si1-x-yGexCy layers grown pseudomorphically onto Si(001), have been reviewed. The incorporation of carbon can be used (i) to enhance SiGe layer properties, (ii) to obtain layers with new properties, or (iii) to control dopant diffusion in microelectronic devices. The phenomenon of suppressed boron diffusion in carbon-rich epitaxial layers can be used to increase the performance of SiGe heterojunction bipolar transistors (HBTs). When compared with SiGe technologies, the addition of carbon offers a significantly greater flexibility in process design and a greater latitude in processing margins.
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Weitere Infos & Material
Preface
Table of Contents
1. Introduction
2.Growth of Epitaxial Si1-yCy and Si1-x-yGexCy.2.1 Basic Considerations
2.2 The Concept of Surface Solubility
2.3 Substitutional versus Interstitial C Incorporation
2.4 Segregation of Carbon-Containg Complexes
3.Mechanical and Structural Properties. 3.1 Strain Manipulation
3.2 Thermal Stability
3.3 Strain-Compensated Ternary Alloys
4.Electrical Properties of C Containing Alloys on Si(001). 4.1 Band Gap Changes and Band Offsets
4.2 Charge Transport
5. Highly Concentrated Pseudomorphic Si1-yCy Layers
5.1 Model Considerations
5.2 Experimental Verification
5.3 Formation of Carbon-Rich Surface in Silicon
6.Application of SiGe:C in Heterojunction Bipolar Transitors
6.1 Suppressed Dopant Diffusion in Carbon-Rich Silicon
6.2 Advanced Heterojunction Bipolar Transistors with SiGe:C
6.3 Conclusion
7.Summary and Outlook
Acknowledgement
References
