MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch

Softcover Nachdruck of the original 1. Auflage 2014
ISBN: 978-3-319-34535-2
Verlag: Springer International Publishing

Buch, Englisch, Band 122, 199 Seiten, Paperback, Format (B × H): 155 mm x 235 mm, Gewicht: 3343 g

Reihe: Analog Circuits and Signal Processing

This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.

Zielgruppe

Professional/practitioner

Autoren/Hrsg.

Singh, Ghanshyam

Srivastava, Viranjay M.

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Transistoren
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Schaltungsentwurf

Inhaltsverzeichnis

Introduction.- Design of Double-Pole Four-Throw RF Switch.- Design of Double-Gate MOSFET.- Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET.- Cylindrical Surrounding Double-Gate RF MOSFET.- Hafnium Dioxide Based Double-Pole Four-Throw Double-Gate RF CMOS Switch.- Testing of MOSFET Surfaces Using Image Acquisition.- Conclusions and Future Scope.

Über Autor(innen)

Dr. Viranjay M. Srivastava is an Assistant Professor at Jaypee University of Information Technology. Dr. Ghanshyam Singh is an Associate Professor at Jaypee University of Information Technology.