Microwave Semiconductor Devices

Physics and Application
1. Auflage 2026
ISBN: 978-1-4987-3909-2
Verlag: Taylor & Francis Inc

Buch, Englisch, 432 Seiten, Format (B × H): 156 mm x 234 mm

This book makes an attempt to introduce the physical concept behind the operation of microwave and millimeter wave semiconductor devices in detail. It is written for undergraduates and postgraduates of Physics, Electronics, Electrical and Electronics Engineering.

Autoren/Hrsg.

Bandyopadhyay, Jyoti P.

Banerjee, Suranjana

Fachgebiete

• Technische Wissenschaften Technik Allgemein Technische Optik, Lasertechnologie
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Mikrowellentechnik
• Naturwissenschaften Physik Physik Allgemein
• Technische Wissenschaften Sonstige Technologien | Angewandte Technik Lasertechnologie, Holographie

Inhaltsverzeichnis

Fundamentals. Transferred Electron Devices. Impact Avalanche Transit Time (IMPATT) Diode. Other Transit Time Devices. Other Two Terminal Microwave Devices. Microwave Transistors. Heterojunction Microwave Devices. Terahertz Semiconductor Devices.

Über Autor(innen)

Prof (Dr) Jyoti Prasad Bandyopadhyay is presently an Emeritus Professor in the Institute of Radio Physics and Electronics, University of Calcutta. He is the former Director of the Centre of Millimeter wave Semiconductor Devices and Systems (CMSDS), University of Calcutta. He has a long and successful teaching and research career of about four decades in the Institute of Radio Physics and Electronics, University of Calcutta. His research interest covers Semiconductor Microwave and Terahertz devices, Photonic and Quantum effect devices. He has published more than 180 research articles in peer reviewed journals, several of which are highly cited. He has handled several R&D projects funded by DRDO, MIT, DOE, Government of India in the field of design, fabrication and characterization of microwave and millimetre wave semiconductor devices in the University of Calcutta.He has supervised the PhD theses of a number of students of Calcutta University for their doctoral degrees. Dr Bandyopadhyay is also the recipient of Indian National Science Academy Fellowship, Griffith Memorial prize of Calcutta University etc. He is the Fellow of IETE, New Delhi and life member of many scientific organizations.
Dr Suranjana Banerjee received her B.Tech. and M.Tech. degrees from the Institute of Radio Physics and Electronics, University of Calcutta, Kolkata, West Bengal, India in the years 2005 and 2008 respectively. She topped the list of Electronics Honours graduates of Calcutta University in 2002. Presently, she is working as an Assistant Professor in the Department of Electronics and Communication Engineering, “Academy of Technology”, Adisaptagram, Hooghly 712121, affiliated to “West Bengal University of Technology”, Kolkata, India. She has taught the subject “Microwave Engineering” to the undergraduate students for the last six years. Her research interest is in the area of Heterojunction millimeter-wave Avalanche Transit Time (ATT) devices. She has authored about 15 research papers in referred International journals. She has presented several research papers in International conferences held in India in the area of Microwave IMPATT devices and published these papers in the conference proceedings.