Sonstiges, Englisch, 1036 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Sonstiges, Englisch, 1036 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
ISBN: 978-3-03859-922-7
Verlag: Trans Tech Publications
Volume is indexed by Thomson Reuters CPCI-S (WoS).
Wide-bandgap semiconductors such as SiC, III-V nitrides and related compounds are attracting rapidly increasing attention due to their other, very interesting, physical properties which are often superior in many ways to those of conventional semiconductors. Steady improvements in crystal quality, and improved knowledge concerning their physical properties, are leading to rapid developments in high-power, high-temperature, high-frequency electronics and blue-light emitters.
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Weitere Infos & Material
Properties of Free-Standing 3C-SiC Monocrystals Grown on Undulant-Si(001) SubstrateInvestigation of Mass Transport during SiC PVT Growth Using Digital X-Ray Imaging, 13C Labeling of Source Material and Numerical ModelingStress Analysis of SiC Bulk Single Crystal Growth by Sublimation MethodOn the Early Stages of Sublimation Growth of 4H-SiC Using 8? Off-Oriented SubstratesGrowth of High Quality p-Type 4H-SiC Substrates by HTCVDTowards a Continuous Feeding of the PVT Growth Process: an Experimental InvestigationGrowth of Faceted Free-Spreading SiC Bulk Crystals by SublimationHTCVD Grown Semi-Insulating SiC SubstratesSublimation-Grown Semi-Insulating SiC for High Frequency DevicesDefects in Semi-Insulating SiC SubstratesPreparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal GrowthPVT Growth of p-Type and Semi-Insulating 2-Inch 6H-SiC CrystalsPhotoluminescence and Thermally Stimulated Luminescence in Semi-Insulating SiCGrowth of Phosphorus-Doped 6H-SiC Single Crystals by the Modified Lely MethodEffective Increase of Single-Crystalline Yield during PVT Growth of SiC by Tailoring of Radial Temperature GradientUniformization of Radial Temperature Gradient in Sublimation Growth of SiC Effect of Ambient on 4H-SiC Bulk Crystals Grown by SublimationContinuous Growth of SiC Single Crystal from Ultrafine Particle PrecursorDefect Reduction in SiC Crystals Grown by the Modified Lely MethodA Study of HTCVD Renewing of the SiC Polycrystalline Source during the PVT ProcessProperties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor TransportMorphological Features of Sublimation-Grown 4H-SiC LayersGraphitization of the Seeding Surface during the Heating Stage of SiC PVT Bulk GrowthHeat Transfer Modeling of a New Crystal Growth ProcessOptimization of Chamber Design and Rapid Thermal Processing Regimes for SiC Substrates by Temperature and Thermal Stress DistributionCrystal Interface Shape Simulation during SiC Sublimation GrowthGrowth at High Rates and Characterization of Bulk 3C-SiC MaterialComparison between Ar and N2 for High-Temperature Treatment of 4H-SiC SubstratesSiC Epitaxy on Non-Standard Surfaces4H-SiC Epitaxial Growth for High-Power DevicesPredictions of Nitrogen Doping in SiC Epitaxial LayersExperiment and Modeling of the Large-Area Etching and Growth Rate of Epitaxial SiCChemical Vapor Deposition of n-Type SiC Epitaxial Layers Using Phosphine and Nitrogen as the PrecursorsWide-Area Homoepitaxial Growth of 6H-SiC on Nearly On-Axis (0001) by Chemical Vapor DepositionNitrogen Delta Doping in 4H-SiC EpilayersTemperature Effects in SiC Epitaxial GrowthFast Epitaxial Growth of High-Quality 4H-SiC by Vertical Hot-Wall CVDCharacterization of Homoepitaxial 4H-SiC Layer Grown from Silane/Propane SystemOrigin and Behaviour of Deep Levels in Sublimation Growth of 4H-SiC LayersVacancies in As-Grown and Electron-Irradiated 4H-SiC Epilayers Investigated by Positron AnnihilationComputational Modeling for the Development of CVD SiC Epitaxial Growth ProcessesIs Al-Si a Good Melt for the Low-Temperature LPE of 4H-SiC?Uniformity Improvement in SiC Epitaxial Growth by Horizontal Hot-Wall CVDFeatures of Sublimation Growth on Porous SiC Substrates: Characteristics and Properties of Porous and Epitaxial LayersThe Effect of Thermal Gradients on SiC WafersComplete Micropipe Dissociation in 4H-SiC(03-38) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier DiodesEpitaxial Growth of 6H-SiC by a Vapor Liquid Solid MethodGrowth of p-Type SiC Layer by Sublimation EpitaxyControl of Pendeo Epitaxial Growth of 3C-SiC on Silicon SubstrateCharacterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-EpitaxyGrowth of SiC Hetero-Epitaxial Films by Pulsed-Laser Deposition -Laser Frequency Dependence-Thin Film SiC Epitaxy on Si(111) from Acetylene PrecursorPreparation of SiC/Si(111) Hetero-Epitaxial Junctions by PLD and Crystallographic and l-V CharacterizationHetero-Epitaxial Growth of 3C-SiC on Carbonized Silicon SubstratesHigh-Resolution XRD Investigations of the Strain Reduction in 3C-SiC Thin Films Grown on Si (111) SubstratesSiC Synthesis by Fullerene Free Jets on Si(111) at Low TemperaturesProduction of 8-Inch SiC Wafer by Hybridization of Single and Polycrystalline SiC WafersSynchrotron White Beam X-Ray Topography and High Resolution Triple Axis X-Ray Diffraction Studies of Defects in SiC Substrates, Epilayers and DevicesStacking Fault Formation in Highly Doped 4H-SiC Epilayers during AnnealingLattice Dynamics of 4H-SiC by Inelastic X-Ray ScatteringConditions for Micropipe Dissociation by 4H-SiC CVD GrowthInvestigation of Defects in 4H-SiC by Synchrotron Topography, Raman Spectroscopy Imaging and Photoluminescence Spectroscopy ImagingDoping-Related Strain in n-Doped 4H-SiC CrystalsStacking Faults in 3C-SiC Relax Lattice DeformationCharacteristics of Planar Defects in Shallow Trenches Related to the Presence of MicropipesOrientation-Dependent Defect Formation in Silicon Carbide Epitaxial LayersComparative TEM Investigation of MBE and RTCVD Conversion of Si into SiCHigh-Accuracy Lattice Constant Measurements of Electron-Irradiated 6H-SiC Single CrystalsCharacterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum SublimationDynamics of 4H-SiC PlasticityTime-Resolved Photoluminescence of Deep Centers in Semi-Insulating 4H-SiCIdentification of Dumb-Bell Shaped Interstitials in Electron Irradiated 6H SiC by Photoluminescence SpectroscopyPhotoluminescence Up-Conversion Processes in SiCNew Photoluminescence Features in 4H-SiC Induced by HydrogenationAnalysis of Extended Defects in 6H-SiC Using Photoluminescence and Light Beam Induced Current SpectroscopyDonor-Acceptor Pair Luminescence in 4H-SiC Doped with Nitrogen and AluminumRaman Excitation Profiles of 3C-, 4H-, 6H-, 15R- and 21R-SiCInfrared Optical Properties of 3C, 4H and 6H Silicon CarbideImpact of Compensation on Optical Absorption Bands in the Below-Bandgap Region in n-Type (N) 6H-SiCElectrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk CrystalsDetermination of Exciton Capture Cross-Sections of Neutral Nitrogen Donor on Cubic and Hexagonal Sites in n-Type (N) 6H-SiCDll PL Intensity Dependence on Dose, Implantation Temperature and Implanted Species in 4H- and 6H-SiCApplication of UV Scanning Photoluminescence Spectroscopy for Minority Carrier Lifetime MappingRaman Imaging Analysis of SiC WafersSimple Method for Mapping Optical Defects in Insulating Silicon Carbide WafersNon-Destructive SiC Wafer Evaluation Based on an Optical Stress TechniqueElectrical and Optical Characterization of SiCEvidence for Two Charge States of the S-Center in Ion-Implanted 4H-SiCActivation Study of Implanted N+ in 6H-SiC by Scanning Capacitance MicroscopyMajority Traps Observed in H+- or He+-Implanted Al-Doped 6H-SiC by Admittance and Deep Level Transient SpectroscopyOn the Unusual Nature of a DLTS-Detected Defect in Bulk n-Type 6H-SiCHigh Temperature Deep Level Transient Spectroscopy Investigations of n-Type 4H-SiC Epitaxial LayersModeling of Lattice Heat Conductivity and Thermopower in SiC Considering the Four-Phonon Scattering ProcessesImproved p-Type Conductivity in Heavily Al-Doped SiC by Ion-Beam-Induced Nano-CrystallizationTransport Investigation of Low-Nitrogen-Doped 6H-SiC Ion-Implantation vs. In Situ DopingFrom Transport Measurements to Infrared Reflectance Spectra of n-Type Doped 4H-SiC Layer StacksImpact of Phonon Drag Effect on Seebeck Coefficient in p-6H-SiC: Experiment and SimulationParameters of Electron-Hole Scattering in Silicon CarbideDefect Evolution in Proton-Irradiated 4H SiC Investigated by Deep Level Transient SpectroscopyElectrical Characterization of Ni/Porous SiC/n-SiC StructureCorrelation between Electrical and Optical Mapping of Boron Related Complexes in 4H-SiCInvestigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC RegionMapping on Bulk and Epitaxy Layer 4H-SiCBreakdown Electric Field in 4H-SiC Epitaxial Layer Grown on Various Net-Doping SubstratesElectron-Induced Damage Effects in 4H-SiC Schottky DiodesMeasurement of Hall Mobility in 4H-SiC for Improvement of the Accuracy of the Mobility Model in Device SimulationReal Relationship between Acceptor Density and Hole Concentration in Al-Implanted 4H-SiCElectrical Characteristics of Plasma-Enhanced Chemical Vapor Deposited Silicon Carbide Thin FilmsCorrelation between Defects and Electrical Properties of 4H-SiC Based Schottky DiodesElectrical Characterization of Erbium-Implanted 4H-SiC EpilayersDeep Levels in As-Grown 4H-SiC Epitaxial Layers and their Correlation with CVD ParametersElectrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy IonsIdentification and Annealing of Common Intrinsic Defect CentersPolytype-Dependent Vacancy Annealing Studied by Positron AnnihilationNitrogen-Vacancy Complexes in SiC ? Final Annealing Products of the Silicon Vacancy?A Deep Erbium-Related Bandgap State in 4H Silicon CarbideTheoretical Study of Antisite Aggregation in a-SiCEPR Studies of Interface Defects in n-Type 6H-SiC/SiO2 Using Porous SiCElectrical and Multifrequency EPR Study of Nitrogen and Carbon Antisite-Related Native Defect in n-Type As-Grown 4H-SiCPhosphorus-Related Shallow and Deep Defects in 6H-SiCEPR Study of Electron Irradiation-Induced Defects in Semi-Insulating SiC:VCalculation of Hyperfine Constants of Defects in 4H-SiCA Simple Model of 3d Impurities in Cubic Silicon CarbideEffective Mass of Electrons in Quantum-Well-Like Stacking-Fault Gap States in Silicon CarbideA Shallow Acceptor Complex in 4H-SiC: AlSiNCAlSiElectronic Structure of Twin Boundaries in 3C-SiC, Si and DiamondElectronic Properties of Stacking Faults in 15R-SiCA Cause for SiC/SiO2 Interface States: the Site Selection of Oxygen in SiCAngle-Resolved Studies of SiO2/SiC SamplesPositron Annihilation Studies of Defects at the SiO2/SiC InterfaceA Study of the Shallow Electron Traps at the 4H-SiC/SiO2 InterfaceTraps at the Interface of 3C-SiC/SiO2-MOS-StructuresStudy of the Wet Re-Oxidation Annealing of SiO2/4H-SiC (0001) Interface Properties by AR-XPS MeasurementsStructural Defects at SiO2/SiC Interfaces Detected by Positron AnnihilationReduction of Interface Trapped Density of SiO2/4H-SiC by Oxidation of Atomic OxygenHigh Inversion Channel Mobility of MOSFET Fabricated on 4H-SiC C(000-1) Face Using H2 Post-Oxidation AnnealingCubic SiC Surface Structure Studied by X-Ray DiffractionAdsorption of Toluene on Si(100) from First PrinciplesAtomic Structure of Si-Rich 3C-SiC(001)-(3x2): a Photoelectron Diffraction StudyEffects of Initial Nitridation on the Characteristics of SiC-SiO2 InterfacesAg Growth on 3C-SiC(001) c(2x2) C-Terminated and c(4x2) Si-Terminated SurfacesModelling the Formation of Nano-Sized SiC on SiNanostructure Formation on a Surface of 6H-SiC by Laser RadiationTheoretical Investigation of Adsorption of N-Containing Species at SiC(0001) SurfacesElectrical Activation of Ion-Implanted Nitrogen and Aluminum in 4H-SiC by Excimer Laser AnnealingSurface Properties and Electrical Characteristics of Rapid Thermal Annealed 4H-SiCEffective Normal Field Dependence of Inversion Channel Mobility in 4H-SiC MOSFETs on the (11-20) FaceDamage Relaxation Pre-Activation Anneal in Al-Implanted SiCElectrical Characterization of Ion-Implanted n+/p 6H-SiC DiodesHigh-Sensitivity Ion Beam Analytical Method for Studying Ion-Implanted SiCSiC Delta-Doped-Layer Structures and DACFETAnnealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiCGettering Effect with Al Implanted into 4H-SiC CVD Epitaxial LayersVacancy-Type Defect Distributions of 11B-, 14N- and 27Al-Implanted 4H-SiC Studied by Positron Annihilation Spectroscopy Damage Distributions Induced by Channeling Implantation of Nitrogen into 6H Silicon CarbideFirst-Principles Studies of N and P Dopant Interactions in SiC: Implications for Co-DopingQuantitative Evaluation of Implantation Damage and Damage Recovery after Room Temperature Ion-Implantation of N+ and P+ Ions in 6H-SiCPorous SiC: New Applications through In- and Out- Dopant DiffusionCo-Formation of Gate Electrode and Ohmic Contacts in SiC Power MOSFETsElectrochemical Etching of n-Type 6H-SiC Using Aqueous KOH SolutionsSingle Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical MOSFETsAl/Ti Ohmic Contacts to p-Type Ion-Implanted 6H-SiC: Mono- and Two- Dimensional Analysis of TLM DataLow-Frequency Noise Measurements as a Quality Indicator for Ohmic Contacts to n-GaNThermal Stability of Pd Schottky Contacts to p-Type 6H-SiCSuppression of Leakage Current Increase of 4H-SiC Schottky Barrier Diodes during High-Temperature Annealing by "Face-to-Face" ArrangementThe Effect of Plasma Etching on the Electrical Characteristics of 4H-SiC Schottky DiodesUse of Laser Interferometry and Optical Emission Spectroscopy for Monitoring the Reactive Ion Etching of 6H - and 4H-SiC Diffusion-Welded Al Contacts to p-Type SiCThermal Etching of 6H-SiC (11-20) Substrate SurfaceSchottky Barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal PhotoemissionCharacteristics of Ni Schottky Contacts on Compensated 4H-SiC LayersPd-Based Ohmic Contacts to LPE 4H-SiC with Improved Thermal StabilitySurface Structure of Electrochemically Etched a-SiC SubstratesSchottky-Ohmic Transition in Nickel Silicide/SiC System: Is it Really a Solved Problem?Gate Oxide with High Dielectric Breakdown Strength after Undergoing a Typical Power MOSFET Fabrication ProcessInfluence of Material Properties on Wide-Bandgap Microwave Power Device CharacteristicsA Comparison of MESFETs on Different 4H-Silicon Carbide Semi-Insulating SubstratesPerformance of Silicon Carbide Microwave MESFETs Using a Thin p-Doped Buffer LayerRF Characteristics of Short-Channel SiC MESFETsPassivation Effect on Channel Recessed 4H-SiC MESFETs4H-SiC Lateral RESURF MOSFET with a Buried Channel StructureComparison of 1kV Lateral RESURF MOSFETs in 4H-SiC and 6H-SiCModelling of Radiation Response of p-Channel SiC MOSFETsInfluence of Depletion Region Length on Specific On-Resistance in SiC MOSFET4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial ApplicationsSimulation and Measurement of Switching Characteristics of 4H-SiC Buried-Gate JFETsOptimisation of a 4H-SiC Enhancement Mode Power JFETElectro-Thermal Simulations and Measurement of Silicon Carbide Bipolar TransistorsPower Amplification in UHF Band Using SiC RF Power BJTsDemonstration of Monolithic Darlington Transistors in 4H-SiCHigh-Voltage Modular Switch Based on SiC VJFETs - First Results for a Fast 4.5kV/1.2O ConfigurationDesign and Technology Considerations for a RF BJT in SiCAnalysis of Unipolar and Bipolar Cascoded Switches with MOS GateSiC Power Devices: How to be Competitive towards Si-Based Solutions?SiC Power Devices on QUASIC and SiCOI Smart-Cut? Substrates: First DemonstrationsLow Power Dissipation SiC Schottky Rectifiers with a Dual-Metal Planar StructureCharacterisation of the High Temperature Performance of 4H-SiC Schottky Barrier DiodesComparison between Different Schottky Diode Edge Termination Structures: Simulations and Experimental ResultsOptimum Design of a SiC Schottky Barrier Diode Considering Reverse Leakage Current due to a Tunneling ProcessCharacterization of the Forward Conduction of 4H-SiC Planar Junction DiodeThe Electrothermal Behavior of 4H-SiC Schottky Diodes at Forward Bias Considering Single Pulse and Pulsed Current Operation1kV 4H-SiC JBS Rectifiers Fabricated Using an AlN Capped AnnealSimulations of High-Voltage 4H-SiC p+nn+ Diodes Using a Transient Model for the Deep Boron LevelOptical Switch-On of Silicon Carbide ThyristorReverse Current Recovery in 4H-SiC Diodes with n- and p-BaseSiC Lateral Super-Junction Diodes Fabricated by Epitaxial GrowthOBIC Measurements of 1.3kV 6H-SiC Bipolar Diodes Protected by Junction Termination Extension4H-SiC pn Diode Grown by LPE Method for High-Power ApplicationsCharacterization of a 4H-SiC High Power Density Controlled Current LimiterForward Dynamic IV Characteristics in Epitaxial and Implanted SiC PiN Power DiodesFabrication and Simulation of 4H-SiC PiN Diodes Having Mesa Guard Ring Edge TerminationFabrication and Characterisation of High-Voltage SiC-ThyristorsSiC Device Limitation Breakthrough with Novel Floating Junction Structure on 4H-SiCNovel Buried Field Rings Edge Termination for 4H-SiC High-Voltage DevicesTo Be ''Snappy'' or Not - a Comparison of the Transient Behaviours of Bipolar SiC-DiodesDegradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiCInsight into the Degradation Phenomenon in SiC Devices from Ab Initio Calculations of the Electronic Structure of Single and Multiple Stacking Faults Properties of Different Stacking Faults that Cause Degradation in SiC PiN Diodes Impact of SiC Structural Defects on the Degradation Phenomenon of Bipolar SiC DevicesStacking Fault ? Stacking Fault Interactions and Cubic Inclusions in 6H-SiC: an Ab Initio Study Influence of Stacking Faults on the I-V Characteristics of 4H-SiC Schottky Barrier Diodes Fabricated on the (11-20) FaceReliability of 4H-SiC p-n Diodes on LPE Grown LayersIn Situ Studies of Structural Instability in Operating 4H-SiC PiN DiodesSEM Visibility of Stacking Faults in 4H-Silicon Carbide Epitaxial and Implanted LayersSiC X-Ray Detectors for Spectroscopy and Imaging over a Wide Temperature RangeEffects of Nitrogen Radical Irradiation on Performance of SiC MOSFETsNew Tunnel Schottky SiC Devices Using Mixed Conduction CeramicsMISiCFET Chemical Sensors for Applications in Exhaust Gases and Flue GasesRadiation Hardness of Silicon CarbideNO Gas Detection at High Temperature Using Thin-Pt 4H-SiC and 6H-SiC Schottky DiodesImproved Understanding and Optimization of SiC Nearly Solar Blind UV Photodiodesp-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization RadiationEffect of Tantalum in Sublimation Growth of Aluminum NitrideGrowth of AlN Bulk Crystals by Sublimation Sandwich MethodSeeded PVT Growth of Aluminum Nitride on Silicon CarbideGrowth and Characterization of Epitaxial Wurtzite Al1-xInxN Thin Films Deposited by UHV Reactive Dual DC Magnetron SputteringImplementation of Hot-Wall MOCVD to the Growth of High-Quality GaN on SiCProperties of AlN Layers Grown by Sublimation EpitaxyMicrostructure of GaN Layers Grown onto (001) and (111) GaAs Substrates by Molecular Beam EpitaxyStructural Study of GaN Layers Grown on Carbonized Si(111) Substrates
