Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect

Softcover Nachdruck of the original 1. Auflage 2018
ISBN: 978-981-13-5585-1
Verlag: Springer Nature Singapore

Buch, Englisch, 137 Seiten, Previously published in hardcover, Format (B × H): 155 mm x 235 mm, Gewicht: 248 g

Reihe: Springer Theses

This thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material. Pursuing a systematic approach to resolve the remaining critical issues in the CMP, it first investigates the tribocorrosion properties and the material removal mechanisms of copper (Cu) and Ru in KIO-based slurry. The thesis subsequently studies Cu/Ru galvanic corrosion from a new micro and in-situ perspective, and on this basis, seeks ways to mitigate corrosion using different slurry additives. The findings presented here constitute a significant advance in fundamental and technical investigations into the CMP, while also laying the groundwork for future research.

Zielgruppe

Research

Autoren/Hrsg.

Cheng, Jie

Fachgebiete

• Technische Wissenschaften Maschinenbau | Werkstoffkunde Produktionstechnik
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Maschinenbau Tribologie
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik

Inhaltsverzeichnis

Introduction.- Material Removal Mechanism of Cu in KIO-based Slurry.- Material Removal Mechanism of Ru in KIO-based Slurry.- Tribocorrosion Investigations of Cu/Ru Interconnect Structure during CMP.- Micro-galvanic Corrosion of Cu/Ru Couple in KIO Solution.- Galvanic Corrosion Inhibitors for Cu/Ru Couple During Chemical Mechanical Polishing of Ru.- Synergetic Effect of Potassium Molybdate and Benzotriazole on the CMP of Ru and Cu in KIO-based Slurry.- Conclusions and Recommendations.