Classical to Quantum Transport in Multi-Dimensional Field Effect Transistors

1. Auflage 2025
ISBN: 978-1-032-89579-6
Verlag: Taylor & Francis Ltd

Buch, Englisch, 392 Seiten, Format (B × H): 156 mm x 234 mm

This book covers the recent advancements in the transport models of various cutting-edge technology semiconductor devices for sensing, circuits, in-memory, or neuromorphic computing.

Classical to Quantum Transport in Multi-Dimensional Field Effect Transistors offers a wide range of topics with images and informative explanations. It begins with an exploration of the fundamentals of FET functioning, emphasizing how behavior is governed by classical models. As the semiconductor industry pushes the boundaries of miniaturization and performance, multi-dimensional field effect transistors (MuDFETs) and emerging material platforms are redefining the foundations of modern electronics. This book offers a deep and insightful journey through the evolving landscape of advanced FET architectures—from classical conduction models to quantum and ballistic transport regimes. Authored by experts across academia and research institutions, this book offers in-depth discussions on multi-dimensional and junctionless FETs, 2D materials and TMDCs, nanosheet transistors, and TFET-based biosensors.

Whether exploring the quantum limits of device physics or developing real-world sensing solutions, this collection bridges theory and application in one compelling volume. This book serves as a vital reference for academics, graduate students, and professionals working in nanoelectronics, semiconductor devices, biosensors, and photonic field.

Zielgruppe

Postgraduate and Professional Reference

Autoren/Hrsg.

Dixit, Ankit

Kumar, Naveen

Kumar, Prateek

Singh, Prabhat

Fachgebiete

• Mathematik | Informatik EDV | Informatik Technische Informatik Quantencomputer, DNA-Computing
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik

Inhaltsverzeichnis

Chapter 1- Introduction to Multi-Dimensional Field Effect Transistors (MuDFETs)

Mamataj Khatun and Ekramul Kabir

Chapter 2- Introduction to Multi-Dimensional Field Effect Transistors (FETs)  Piyali Saha

Chapter 3- 2D Material Based Field Effect Transistors (FETs)  Piyali Saha, Soumya Sen, Prabhat Singh and Ashish Raman

Chapter 4- Emerging Transition Metal Dichalcogenides (TMDCs) in Semiconductor Design: A Path to Next-Generation Electronics

Malvika, Ashutosh Srivastava, Jagritee Talukdar, Rajan Singh, Prabhat Singh, Jami Venkata Suman

Chapter 5- From Classical to Quantum: Ballistic Transport in Nanosheet FETs

E.Rajalakshmi, N.B.Balamurugan, M.Hemalatha and M.Suguna

Chapter 6- Classical to Semi-classical Transport in Field Effect Transistors

Sharmistha Shee Kanrar, Shib Sankar Das and Subir Kumar Sarkar

Chapter 7- Scaling Capability Analysis of Junctionless Multi-Gate FETs

R. Ouchen, T. Berghout, F. Djeffal and H. Ferhati

Chapter 8- Nanosheet Transistors: A New Dimension in Charge Transport

Dr. Parul Devi

Chapter 9- Nanosheet Transistors: A New Dimension in Charge Transport

Vratika Verma, Teena Saini, Sakshi Saini and Jagram Meena

Chapter 10- The charge transport of the Breast Cancer Cells on Metal Strip-loaded Extended Source -TFET biosensor

Madhulika Verma and Sachin Agrawal

Chapter 11- Exploring Tunnel Field Effect Transistors (TFETs) as Label-Free Biosensors: Bridging Advances in Biosensing Technology

Basudha Dewan1 and Kamal Kishor Choure

Chapter 12- Field Effect Transistors in Gas Sensing: Advances in Detection and Analysis of Diverse Gases

Ankit Kumar Singh, Sanjeev Rai and Nirmal Roy

Chapter 13- High-Performance Silicon Nitride Waveguides: A Platform for Nonlinear and Quantum Photonics

Chandani Dubey, Prabhat Singh, Priya Kaushal, Dilip Singh, Malvika, Ashutosh Srivastava

Über Autor(innen)

Naveen Kumar received his PhD from the Dr. B. R. Ambedkar National Institute of Technology, Jalandhar, India. Dr. Kumar is a postdoctoral research associate in DMG in the Electronic and Nanoscale Engineering Division, University of Glasgow. His research revolves around different semiconductor devices including ultra-scaled FETs, solar cells, photodiodes, HEMT, quantum dots, and their prospective applications. His main areas of research interest include semiconductor device physics, MEMS/NEMS, and spintronics.

Prateek Kumar received his PhD from the University of Delhi, India. Dr. Kumar is a postdoctoral research associate and the Chair for Electronic Devices and Integrated Circuits, Technical University of Dresden, Germany. His research includes next-generation SiGe HBTs, feedback FETs, and graphene-based transistors with special emphasis on quantum and semi-classical transport. His main areas of research interest include semiconductor device physics, MEMS/NEMS, and spintronics.

Ankit Dixit received his Ph.D. in Electronics and Communication Engineering from the Indian Institute of Information Technology, Design, and Manufacturing, Jabalpur, India. He carried out his research on III-V materials for the application of low-power devices and biosensor applications. Dr. Dixit is working as a research associate in the DeepNano Group, University of Glasgow, Scotland, where he is responsible for conducting research on nanoelectronics device simulations and variability analysis for novel devices.

Prabhat Singh received his PhD from the National Institute of Technology, Hamirpur, Himachal Pradesh, India. Dr. Singh is a postdoctoral research associate in the School of Electrical and Computer Science at IIT Bhubaneswar, Odisha. His research revolves around different semiconductor devices including cryogenic CMOS, ultra-scaled FETs, solar cells, quantum dots, and their prospective applications. His main areas of research interest include semiconductor device physics, solid-state devices, analog complementary metal oxide semiconductor (CMOS) integrated circuits, and nanoscale device design and simulation.