Bias Temperature Instability for Devices and Circuits

Softcover Nachdruck of the original 1. Auflage 2014
ISBN: 978-1-4939-5529-9
Verlag: Springer

Buch, Englisch, 810 Seiten, Previously published in hardcover, Format (B × H): 155 mm x 235 mm, Gewicht: 13719 g

This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.

Zielgruppe

Professional/practitioner

Autoren/Hrsg.

Grasser, Tibor

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise

Inhaltsverzeichnis

Introduction.- Characterization, Experimental Challenges.- Advanced Characterization.- Characterization of Nanoscale Devices.- Statistical Properties/Variability.- Theoretical Understanding.- Possible Defects: Experimental.- Possible Defects: First Principles.- Modeling.- Technological Impact.- Silicon dioxides/SiON.- High-k oxides.- Alternative technologies.- Circuits.