Heinrich / Bland Ultrathin Magnetic Structures IV

Applications of Nanomagnetism
1. Auflage 2005
ISBN: 978-3-540-27164-2
Verlag: Springer Berlin Heidelberg
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, 258 Seiten

The ability to understand and control the unique properties of interfaces has created an entirely new field of magnetism which already has a profound impact in technology and is providing the basis for a revolution in electronics. The last decade has seen dramatic progress in the development of magnetic devices for information technology but also in the basic understanding of the physics of magnetic nanostructures. Volume III describes thin film magnetic properties and methods for characterising thin film structure topics that underpin the present 'spintronics' revolution in which devices are based on combined magnetic materials and semiconductors. The present volume (IV) deals with the fundamentals of spintronics: magnetoelectronic materials, spin injection and detection, micromagnetics and the development of magnetic random access memory based on GMR and tunnel junction devices. Together these books provide readers with a comprehensive account of an exciting and rapidly developing field. The treatment is designed to be accessible both to newcomers and to experts already working in this field who would like to get a better understanding of this very diversified area of research.

Bret Heinrich: Professor Physics Department, Simon Fraser University, Director Surface Physics Laboratory , SFU; Fellow of American Physical Society; Associate member of Canadian Institute for Advanced Research CIAR); member of Canadian European Research Initiative on Nanostructures (CERION II); a fellow of Alexander von Humboldt Foundation, member of Advisory Committee, Annual Conference on Magnetism and Magnetic Materials (MMM), American Institute of Physics; member of International Advisory Committee, International Colloquium on Thin Films and Surfaces (ICMFS). Anthony Bland: Professor at the Cavendish Laboratory, Cambridge University, Fellow of the Institute of Physics (UK), and Fellow of Selwyn College has directed the Thin Film Magnetism group at the Cavendish Laboratory since 1989. He frequently serves as an advisory committee member (Rutherford Laboratory, UK and various international conferences) and was awarded the Wohlfarth prize by the Institute of Physics and the Institute of Electrical Engineers in 1999.

Autoren/Hrsg.

Heinrich, Bretislav

Bland, J. A. C.

Inhaltsverzeichnis

1;Preface;5
2;Contents;7
3;Contributors;11
4;Acronyms;13
5;1 Introduction;15
6;2 Magnetoelectronics;18
6.1;2.1 Background;18
6.2;2.2 Commercialized Applications;20
6.3;2.3 Developing Technology;20
6.4;2.4 Future Opportunities;27
6.5;2.5 Conclusion;30
6.6;References;30
7;3 Electrical Spin Injection into Semiconductors;32
7.1;3.1 Introduction;32
7.2;3.2 Device Concepts;33
7.3;3.3 Spin Injection from Semimagnetic Semiconductors;39
7.4;3.4 Spin Injection across an Air-Exposed Semiconductor Interface;42
7.5;3.5 Role of Interface Structure in Spin Injection;45
7.6;3.6 Ferromagnetic Metals as Spin Injecting Contacts;51
7.7;3.7 Characteristics of the Fe/AlGaAs(001) Interface;62
7.8;3.8 Summary;66
7.9;References;68
8;4 Optical Studies of Electron Spin Transmission;72
8.1;4.1 Introduction to Spin Electronics;72
8.2;4.2 Spin Filtering Experiments in Ferromagnet/ Semiconductor Hybrid Structures;83
8.3;4.3 Spin Filtering in Ferromagnet/ Semiconductor Schottky Diodes;88
8.4;4.4 Spin Filtering in Ferromagnet/ Barrier Layer/ Semiconductor Junctions;93
8.5;4.5 Ballistic Spin Transport in Spin Valve Structures;101
8.6;4.6 Summary;109
8.7;References;110
9;5 Introduction to Micromagnetics;114
9.1;5.1 First Spin Around the Track;114
9.2;5.2 One Atom of Iron;115
9.3;5.3 Non-uniform Magnetization;140
9.4;References;161
10;6 Spin Valve Giant Magnetoresistive Sensor Materials for Hard Disk Drives;162
10.1;6.1 Introduction;162
10.2;6.2 The GMR Effect;166
10.3;6.3 A Simple But Powerful Model;167
10.4;6.4 Biasing and Device Physics;171
10.5;6.5 Antiferromagnets in Spin Valves;172
10.6;6.6 Menagerie of Spin Valve Structures;174
10.7;6.7 Future Directions;180
10.8;Appendix: Semiclassical Theory of GMR;183
10.9;References;187
11;7 Magnetic Switching in High-Density MRAM;189
11.1;7.1 Random Access Memories (RAMs);189
11.2;7.2 Magnetoresistive Random Access Memory (MRAM);191
11.3;7.3 MRAM Cell Scaling;201
11.4;7.4 Coherent Rotation of Single-Domain Elements;202
11.5;7.5 Switching of Submicron MRAM Devices;208
11.6;7.6 Micromagnetic Properties of Submicron MRAM Devices;214
11.7;7.7 Issues Related to Magnetic Switching in Future High- Density MRAM;222
11.8;References;227
12;8 Giant Magneto-resistive Random-Access Memories Based on Current- in- Plane Devices;231
12.1;8.1 Introduction;231
12.2;8.2 Magnetic Pseudo-Spin-Valve Device Switching Characteristics, Modeling, and Distributions;234
12.3;8.3 The 1R0T GMRAM Architecture;255
12.4;8.4 Magnetic Spin-Valve Devices for GMRAMs and GMRAM Latch Architectures;258
12.5;8.5 Nonvolatile Memory Comparisons and Potential Applications;260
12.6;8.6 Conclusions;262
12.7;References;263
13;Subject Index;265