Integrated Lasers on Silicon

Erscheinungsjahr 2016
ISBN: 978-1-78548-062-1
Verlag: ISTE Press Ltd - Elsevier Inc

Buch, Englisch, 178 Seiten, Format (B × H): 151 mm x 195 mm, Gewicht: 426 g

Integrated Lasers on Silicon provides a comprehensive overview of the state-of-the-art use of lasers on silicon for photonic integration. The authors demonstrate the need for efficient laser sources on silicon, motivated by the development of on-board/on-chip optical interconnects and the different integration schemes available. The authors include detailed descriptions of Group IV-based lasers, followed by a presentation of the results obtained through the bonding approach (hybrid III-V lasers). The monolithic integration of III-V semiconductor lasers are explored, concluding with a discussion of the different kinds of cavity geometries benchmarked with respect to their potential integration on silicon in an industrial environment.

Zielgruppe

Scientists and engineers in such areas as metals processing and microelectronics, as well those conducting laser materials processing research in either academia or industry

Autoren/Hrsg.

Léger, Yoan

Robert, Cédric

Fachgebiete

• Technische Wissenschaften Verfahrenstechnik | Chemieingenieurwesen | Biotechnologie Metallurgie
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Produktionstechnik Fertigungstechnik
• Technische Wissenschaften Technik Allgemein Technische Optik, Lasertechnologie
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Metallische Werkstoffe

Inhaltsverzeichnis

1: Laser Integration Challenges

2: Group IV Silicon Lasers

3: III-V Lasers Bonded on Si

4: Monolithic III-V Lasers on Silicon

5: Laser Architectures for On-chip Information Technologies

Über Autor(innen)

Robert, Cédric
Cédric Robert obtained a PhD in physics and optoelectronics at INSA Rennes (France) where he studied nanostructures on GaP for the monolithic integration of a laser structure on silicon. He then moved to the III-V materials and devices group of the Tyndall National Institute (Ireland) where he designed, fabricated and characterized optoelectronics devices based on III-V compounds. In particular, he developed III-V light emitters that are transfer printed onto silicon substrates. He joined the Laboratory of Physics and Chemistry of Nano-objects (LPCNO) in INSA Toulouse to study the optical properties of semiconducting transition metal dichalcogenide monolayers (MoS2, WS2, MoSe2, WSe2, MoTe2). He authored or co-authored 20 papers in top ranked journals.

Léger, Yoan
Yoan Léger received the PhD degree in Physics from Université Joseph Fourier, Grenoble, France, in 2007 for his investigation of the optoelectronic properties of individual II-VI magnetic quantum dots and the demonstration of the optical detection of a single magnetic atom spin in the solid state. He then joined B. Deveaud's group in EPFL (Switzerland) and focused his work on the nonlinear properties of semiconductor microcavities in the strong coupling regime, from polariton multistability and all-optical spin switching to superfluidity. Since 2012, hehas worked as a CNRS researcher in Foton laboratory on the monolithic integration of nonlinear and active photonic micro-resonators on silicon.
Dr. Léger is the co-author of 60 publications, counting more than 1100 citations. He is a reviewer for Nature publishing group, the Optical Society and the American Physical Society.