Buch, Englisch, 208 Seiten, Format (B × H): 161 mm x 240 mm, Gewicht: 476 g
Magnetic, Resistive, and Phase Change
Buch, Englisch, 208 Seiten, Format (B × H): 161 mm x 240 mm, Gewicht: 476 g
ISBN: 978-1-4398-0745-3
Verlag: CRC Press
The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.
Zielgruppe
Senior undergraduate students/graduate students in electrical engineering, VLSI, microelectronic, semiconductor and materials; engineers working with nonvolatile memory products, design house/foundry that supplies nonvolatile memory IP, or working at a microprocessor/microcontroller that has on-chip embedded (nonvolatile) memory; researchers working on nonvolatile storage devices.
Autoren/Hrsg.
Fachgebiete
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Schaltungsentwurf
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
- Mathematik | Informatik EDV | Informatik Technische Informatik Hardware: Grundlagen und Allgemeines
Weitere Infos & Material
Introduction to Semiconductor Memories. Phase Change Memory (PCM). Toggle-Mode MRAM (TM-MRAM). Spin-Torque Transfer RAM (STT -RAM). Resistive RAM (R-RAM). Memresistor. The Future of Nonvolatile Memory.
