Buch, Englisch, 91 Seiten, Format (B × H): 155 mm x 235 mm, Gewicht: 191 g
Reihe: Springer Tracts in Electrical and Electronics Engineering
Buch, Englisch, 91 Seiten, Format (B × H): 155 mm x 235 mm, Gewicht: 191 g
Reihe: Springer Tracts in Electrical and Electronics Engineering
ISBN: 978-981-99-0159-3
Verlag: Springer Nature Singapore
This book discusses the evolution of multigate transistors, the design challenges of transistors for high-frequency applications, and the design and modeling of multigate transistors for high-frequency applications. The contents particularly focus on the cut-off frequency and maximum oscillation frequency of different multigate structures. RF stability modeling for multigate transistors is presented, which can help to understand the relation between the small-signal parameter and the physical parameter of the device for optimization. This is a useful reference to those in academia and industry.
Zielgruppe
Research
Autoren/Hrsg.
Fachgebiete
Weitere Infos & Material
1. Introduction.- 2. Rf Transistor and Design Challenges.- 3. Radio Frequency Stability Performance of Dg Mosfet.- 4. Radio Frequency Stability Performance of Dg Tunnel Fet.- 5. Radio Frequency Stability Performance of Finfet.- 6. Radio Frequency Stability Performance Of Silicon Nanowire Transistor.- 7. References.