Buch, Englisch, 248 Seiten, HC runder Rücken kaschiert, Format (B × H): 160 mm x 241 mm, Gewicht: 1220 g
Buch, Englisch, 248 Seiten, HC runder Rücken kaschiert, Format (B × H): 160 mm x 241 mm, Gewicht: 1220 g
ISBN: 978-3-211-82157-2
Verlag: Springer Vienna
In recent years the mathematical modeling of charge transport in semi conductors has become a thriving area in applied mathematics. The drift diffusion equations, which constitute the most popular model for the simula tion of the electrical behavior of semiconductor devices, are by now mathe matically quite well understood. As a consequence numerical methods have been developed, which allow for reasonably efficient computer simulations in many cases of practical relevance. Nowadays, research on the drift diffu sion model is of a highly specialized nature. It concentrates on the explora tion of possibly more efficient discretization methods (e.g. mixed finite elements, streamline diffusion), on the improvement of the performance of nonlinear iteration and linear equation solvers, and on three dimensional applications. The ongoing miniaturization of semiconductor devices has prompted a shift of the focus of the modeling research lately, since the drift diffusion model does not account well for charge transport in ultra integrated devices. Extensions of the drift diffusion model (so called hydrodynamic models) are under investigation for the modeling of hot electron effects in submicron MOS-transistors, and supercomputer technology has made it possible to employ kinetic models (semiclassical Boltzmann-Poisson and Wigner Poisson equations) for the simulation of certain highly integrated devices.
Zielgruppe
Research
Autoren/Hrsg.
Fachgebiete
- Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Mikroprozessoren
- Technische Wissenschaften Technik Allgemein Computeranwendungen in der Technik
- Naturwissenschaften Physik Physik Allgemein Theoretische Physik, Mathematische Physik, Computerphysik
- Mathematik | Informatik EDV | Informatik Professionelle Anwendung Computer-Aided Design (CAD)
- Mathematik | Informatik EDV | Informatik Angewandte Informatik Computeranwendungen in Wissenschaft & Technologie
- Mathematik | Informatik Mathematik Mathematische Analysis Elementare Analysis und Allgemeine Begriffe
- Technische Wissenschaften Technik Allgemein Mathematik für Ingenieure
- Naturwissenschaften Chemie Chemie Allgemein Chemometrik, Chemoinformatik
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise
- Naturwissenschaften Physik Elektromagnetismus Elektrizität, Elektrodynamik
- Mathematik | Informatik Mathematik Mathematische Analysis Differentialrechnungen und -gleichungen
- Naturwissenschaften Physik Elektromagnetismus Magnetismus
Weitere Infos & Material
1 Kinetic Transport Models for Semiconductors.- 1.1 Introduction.- 1.2 The (Semi-)Classical Liouville Equation.- 1.3 The Boltzmann Equation.- 1.4 The Quantum Liouville Equation.- 1.5 The Quantum Boltzmann Equation.- 1.6 Applications and Extensions.- Problems.- References.- 2 From Kinetic to Fluid Dynamical Models.- 2.1 Introduction.- 2.2 Small Mean Free Path—The Hilbert Expansion.- 2.3 Moment Methods—The Hydrodynamic Model.- 2.4 Heavy Doping Effects—Fermi-Dirac Distributions.- 2.5 High Field Effects—Mobility Models.- 2.6 Recombination-Generation Models.- Problems.- References.- 3 The Drift Diffusion Equations.- 3.1 Introduction.- 3.2 The Stationary Drift Diffusion Equations.- 3.3 Existence and Uniqueness for the Stationary Drift Diffusion Equations.- 3.4 Forward Biased P-N Junctions.- 3.5 Reverse Biased P-N Junctions.- 3.6 Stability and Conditioning for the Stationary Problem.- 3.7 The Transient Problem.- 3.8 The Linearization of the Transient Problem.- 3.9 Existence for the NonlinearProblem.- 3.10 Asymptotic Expansions on the Diffusion Time Scale.- 3.11 Fast Time Scale Expansions.- Problems.- References.- 4 Devices.- 4.1 Introduction.- 4.2 P-N Diode.- 4.3 Bipolar Transistor.- 4.4 PIN-Diode.- 4.5 Thyristor.- 4.6 MIS Diode.- 4.7 MOSFET.- 4.8 Gunn Diode.- Problems.- References.- Physical Constants.- Properties of Si at Room Temperature.
