Nanoscale Redox Reaction at Metal/Oxide Interface

A Case Study on Schottky Contact and ReRAM
1. Auflage 2020
ISBN: 978-4-431-54849-2
Verlag: Springer-Verlag GmbH

Buch, Englisch, 89 Seiten, Book, Format (B × H): 155 mm x 235 mm, Gewicht: 172 g

Reihe: NIMS Monographs

Oxide materials are good candidates for replacing Si devices, which are increasingly reaching their performance limits, since the former offer a range of unique properties, due to their composition, design and/or doping techniques.  

The author introduces a means of selecting oxide materials according to their functions and explains metal/oxide interface physics. As he demonstrates, material development is the key to matching oxide materials to specific practical applications.

In this book, the investigation and intentional control of metal/oxide interface structure and electrical properties using data obtained with non-destructive methods such as x-ray photoelectron spectroscopy (XPS) and x-ray reflectometry (XRR) are discussed. Further, it shows how oxide materials can be used to support the development of future functional devices with high-k, ferroelectric, magnetic and optical properties. In closing, it explains optical sensors as an application of metal Schottky contact and metal/oxide resistive random access memory structure.

Zielgruppe

Research

Autoren/Hrsg.

Nagata, Takahiro

Fachgebiete

• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Biomaterialien, Nanomaterialien, Kohlenstoff
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Elektronische Baugruppen, Elektronische Materialien

Inhaltsverzeichnis

General introduction.- Changes in Schottky barrier height behavior of Pt-Ru alloy contacts on single-crystal ZnO.- Surface passivation effect on Schottky contact formation of oxide semiconductors.- Bias-induced interfacial redox reaction in oxide-based resistive random access memory structure.- Switching control of oxide-based resistive random access memory by valence state control of oxide.- Combinatorial thin film synthesis for new nanoelectronics materials.- General summary.

Über Autor(innen)

Takahiro Nagata is a Group Leader at the Research Center for Functional Materials, National Institute for Materials Science (NIMS). He received his Ph.D. from Osaka Prefecture University in 2003. He joined NIMS as a Researcher at the Advanced Electric Materials Center in 2006, was appointed a Senior Researcher in the Semiconductor Device Materials Group at MANA in 2011, and has served in his current position since 2018. He was also a Visiting Scientist at the Department of Materials, University of California Santa Barbara in 2008-2009. Currently he is also a Visiting Professor at the Graduate School of Science and Technology, Meiji University. 

His work focuses on developing combinatorial synthesis systems and high-throughput characterization tools for screening candidate materials in the context of materials informatics. Most recently, he has begun expanding his focus to nanoelectronics materials, including wide band-gap semiconductors.