Mos (Metal Oxide Semiconductor) Physics and Technology

1. Auflage 2002
ISBN: 978-0-471-43079-7
Verlag: Wiley

Buch, Englisch, 928 Seiten, Format (B × H): 162 mm x 233 mm, Gewicht: 1284 g

Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance and stability.

Autoren/Hrsg.

Nicollian, Edward H

Nicollian, E. H.

Brews, John R

Brews, J. R.

Fachgebiete

• Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Naturwissenschaften Physik Thermodynamik Festkörperphysik, Kondensierte Materie

Inhaltsverzeichnis

Introduction.

Field Effect.

Metal Oxide Silicon Capacitor at Low Frequencies.

Metal Oxide Silicon Capacitor at Intermediate and High Frequencies.

Extraction of Interface Trap Properties from the Conductance.

Interfacial Nonuniformities.

Experimental Evidence for Interface Trap Properties.

Extraction of Interface Trap Properties from the Capacitance.

Measurement of Silicon Properties.

Charges, Barrier Heights, and Flatband Voltage.

Charge Trapping in the Oxide.

Instrumentation for Measuring Capacitor Characteristics.

Oxidation of Silicon--Oxidation Kinetics.

Oxidation of Silicon--Technology.

Control of Oxide Charges.

Models of the Interface.

Appendices.

Subject Index.

Symbol Index.

Über Autor(innen)

E. H. Nicollian (deceased) was a?researcher at AT&T Bell Laboratories, Murray Hill, NJ.

John R. Brews, currently Professor of Electrical Engineering, University of Arizona, Tucson AZ, was a researcher at AT&T Bell Laboratories, Murray Hill, NJ.