Noise Coupling in System-On-Chip

1. Auflage 2017
ISBN: 978-1-4987-9677-4
Verlag: CRC Press

Buch, Englisch, 518 Seiten, Format (B × H): 243 mm x 164 mm, Gewicht: 1120 g

Reihe: Devices, Circuits, and Systems

Noise Coupling is the root-cause of the majority of Systems on Chip (SoC) product fails. The book discusses a breakthrough substrate coupling analysis flow and modelling toolset, addressing the needs of the design community. The flow provides capability to analyze noise components, propagating through the substrate, the parasitic interconnects and the package. Using this book, the reader can analyze and avoid complex noise coupling that degrades RF and mixed signal design performance, while reducing the need for conservative design practices. With chapters written by leading international experts in the field, novel methodologies are provided to identify noise coupling in silicon. It additionally features case studies that can be found in any modern CMOS SoC product for mobile communications, automotive applications and readout front ends.

Autoren/Hrsg.

Noulis, Thomas

Fachgebiete

• Technische Wissenschaften Energietechnik | Elektrotechnik Elektrotechnik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise

Inhaltsverzeichnis

System on Chip Substrate Crosstalk Modeling and Simulation Flow. Substrate Induced Signal Integrity in 2D and 3D Ics. TSV-to-Substrate Noise Coupling in 3-D Systems. 3-D Interconnects with IC’s Stack Global Electrical Context Consideration. Modeling of On-Chip Power Distribution Network. Printed Circuit Board Integration of SoC Packages and Signal Integrity Issues at Board Level. Modeling and Characterization of TSV-Induced Noise Coupling. Layout strategies for substrate crosstalk reduction in low cost CMOS processes. Wireless Communications System on Chip substrate noise real time sensing. System-on-Chip Substrate Crosstalk Measurement Techniques. IC Floorplanning Based on Thermal Interactions. A Unified Method for Calculating Parasitic Capacitive and Resistive Coupling in VLSI Circuits. Coupling through substrate for millimeter wave frequencies. Paradigm Shift of On-Chip Interconnects from Electrical to Optical. Electro-Thermal Considerations dedicated to 3-D Integration; Noise Coupling.

Über Autor(innen)

Thomas Noulis is an Assistant Professor in the Physics Department at Aristotle University, in the Electronics Laboratory. From 2012 to 2015, he worked with INTEL Corp., as a Staff RFMS Engineer, in the Mobile & Communications Group in Munich-Germany, where he specialized on 14nm & 28nm design, modeling/characterization, crosstalk and in SoC product active area minimization & migration. Before joining INTEL, from May 2008 to March 2012, Dr. Noulis was with HELIC Inc, initially as Analog/RF IC designer and then as an R&D Engineer specializing in substrate coupling, signal and noise integrity and analog/RFIC design. Thomas Noulis holds a B.Sc. Degree in Physics (2003), a M.Sc. Degree in Electronics Engineering (2005), and a Ph.D in the "Design of signal processing integrated circuits" (2009) from Aristotle Univ. of Thessaloniki, Greece and in collaboration with LAAS (Toulouse-France). From 2004 to 2009, he participated as a principal researcher in multiple European and National research projects related to Space Application and Nuclear Spectroscopy IC design; simultaneously, from 2004 to 2010, he also collaborated as a Visiting/Adjunct Professor with Universities and Technical Institutes. Dr. Noulis is the main author of more than 40 publications, in journals, conferences and scientific book chapters. He holds one French and World patent. His work received more than 50 citations. He is an active reviewer of multiple international journals and has given multiple invited presentations in European Research Institutes on crosstalk and Rad-IC design. Dr. Noulis has been awarded for his research activity by conferences and research organizations and can be reached at [e-mail].