Lifetime Spectroscopy

A Method of Defect Characterization in Silicon for Photovoltaic Applications
1. Auflage. Softcover version of original hardcover Auflage 2005
ISBN: 978-3-642-06453-1
Verlag: Springer

Buch, Englisch, 492 Seiten, Previously published in hardcover, Format (B × H): 155 mm x 235 mm, Gewicht: 874 g

Reihe: Springer Series in Materials Science

Lifetime spectroscopy is one of the most sensitive diagnostic tools for the identification and analysis of impurities in semiconductors. Since it is based on the recombination process, it provides insight into precisely those defects that are relevant to semiconductor devices such as solar cells. This book introduces a transparent modeling procedure that allows a detailed theoretical evaluation of the spectroscopic potential of the different lifetime spectroscopic techniques. The various theoretical predictions are verified experimentally with the context of a comprehensive study on different metal impurities. The quality and consistency of the spectroscopic results, as explained here, confirms the excellent performance of lifetime spectroscopy.

Zielgruppe

Research

Autoren/Hrsg.

Rein, Stefan

Fachgebiete

• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Werkstoffprüfung
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Werkstoffkunde, Materialwissenschaft: Forschungsmethoden
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Metallische Werkstoffe
• Naturwissenschaften Physik Physik Allgemein Experimentalphysik
• Technische Wissenschaften Technik Allgemein Physik, Chemie für Ingenieure
• Technische Wissenschaften Verfahrenstechnik | Chemieingenieurwesen | Biotechnologie Metallurgie
• Naturwissenschaften Physik Elektromagnetismus Mikroskopie, Spektroskopie
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Naturwissenschaften Physik Thermodynamik Festkörperphysik, Kondensierte Materie
• Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik

Inhaltsverzeichnis

Theory of carrier lifetime in silicon.- Lifetime measurement techniques.- Theory of lifetime spectroscopy.- Defect characterization on intentionally metal-contaminated silicon samples.- The metastable defect in boron-doped Czochralski silicon.- Summary and further work.- Zusammenfassung und Ausblick.

Über Autor(innen)

10/99 "Gustav-Mie-Preis" awarded for the diploma thesis by the Faculty of Physics at Albert-Ludwigs-University Freiburg

09/99 – 05/04 PhD thesis in physics at Fraunhofer ISE and University of Konstanz:
"Lifetime spectroscopy as a method of defect characterization in silicon for photovoltaic applications" (overall grade: summa cum laude)

08/95 – 01/97 Undergraduate assistant at Fraunhofer ISE in the area of solar cell
characterization

12/98 – 08/99 Research assistant at Fraunhofer ISE
1. in the department of solar cells – materials – technology
2. in the department of thermal optical systems

06/04 – today Research assistant at Fraunhofer ISE