Sangwal | Additives and Crystallization Processes | Buch | 978-0-470-06153-4 | sack.de

Buch, Englisch, 468 Seiten, Format (B × H): 174 mm x 251 mm, Gewicht: 953 g

Sangwal

Additives and Crystallization Processes


Erscheinungsjahr 2007
ISBN: 978-0-470-06153-4
Verlag: Wiley-Blackwell

Buch, Englisch, 468 Seiten, Format (B × H): 174 mm x 251 mm, Gewicht: 953 g

ISBN: 978-0-470-06153-4
Verlag: Wiley-Blackwell


Crystal growth technology involves processes for the production of crystals essential for microelectronics, communication technologies, lasers and energy producing and energy saving technology. A deliberately added impurity is called an additive and in different industries these affect the process of crystal growth. Thus, understanding of interactions between additives and the crystallizing phases is important in different processes found in the lab, nature and in various industries.

This book presents a generalized description of the mechanisms of action of additives during nucleation, growth and aggregation of crystals during crystallization and has received endorsement from the President of the International Organization for Crystal Growth. It is the first text devoted to the role of additives in different crystallization processes encountered in the lab, nature and in industries as diverse as pharmaceuticals, food and biofuels.

A unique highlight of the book are chapters on the effect of additives on crystal growth processes, since the phenomena discussed is an issue of debate between researchers

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Preface.

1 Complexes in Solutions.

1.1 Structure of Common Solvents.

1.2 Structure of Pure Aqueous Electrolyte Solutions.

1.3 Structure of Aqueous Electrolyte Solutions Containing Additives.

1.4 Polyelectrolytes and Surfactants in Solutions.

1.5 Polydentate Ligands and Molecular Additives.

1.6 Crystal-Additive Interactions.

References.

2 Three-Dimensional Nucleation and Metastable Zone Width.

2.1 Driving Force for Phase Transition.

2.2 Three-Dimensional Nucleation of Crystals.

2.3 Metastable Zone Width.

2.4 Nucleation and Transformation of Metastable Phases.

2.5 Induction Period for Crystallization.

2.6 Effects of Additives.

References.

3 Kinetics and Mechanism of Crystal Growth: An Overview.

3.1 Crystal Growth as a Kinetic Process.

3.2 Types of Crystal-Medium Interfaces.

3.3 Roughening of Steps and Surfaces.

3.4 Growth Kinetics of Rough Faces.

3.5 Growth Kinetics of Perfect Smooth Faces.

3.6 Growth Kinetics of Imperfect Smooth Faces.

3.7 Effect of Foreign Substances on Growth Kinetics.

3.8 Real Crystal Growth Mechanisms.

3.9 Techniques for Studying Growth Kinetics.

References.

4 Effect of Impurities on Crystal Growth Kinetics.

4.1 Mobile and Immobile Impurities.

4.2 Surface Coverage and Adsorption Isotherms.

4.3 Kinetic Models of Impurity Adsorption.

4.4 Confrontation of Impurity Adsorption Mechanisms with Experimental Data.

4.5 Time-Dependent Impurity Adsorption.

4.6 Growth Kinetics in the Presence of Impurities.

4.7 Tapering of KDP-Type Crystals.

4.8 Growth-Promoting Effects of Impurities.

4.9 Impurity Adsorption on Rough Faces.

4.10 Formation of Two-Dimensional Adsorption Layer.

4.11 Interactions Between Additives and Crystal Interface.

4.12 Tailor-Made Additives.

References.

5 Dead Supersaturation Zone and Threshold Supersaturations for Growth.

5.1 Origin of Threshold Supersaturations for Growth.

5.2 Determination of Threshold Supersaturations from v(Ã) and R(Ã) Data.

5.3 Dependence of Threshold Supersaturations on Impurity Concentration: Basic Theoretical Equations and Linear Approximations.

5.4 Confrontation of Theoretical Equations with Experimental Data.

5.5 Impurity Adsorption and Solution Supersaturation.

5.6 Dependence of Ratios Ãd/Ã* and Ã*/Ã** on ci References.

6 Mineralization in Natural and Artificial Systems.

6.1 Biomineralization as a Process.

6.2 Pathological Mineralization.

6.3 Effect of Biologically Active Additives on Crystallization Processes.

6.4 Scale Formation and Salt Weathering.

References.

7 Morphology and Size Distribution of Crystals.

7.1 Growth Morphology of Crystals.

7.2 Ostwald Ripening and Crystal Size Dispersion.

7.3 Crystal Size Distribution.

7.4 Control of Shape and Size of Particles.

7.5 Biological Tissue Engineering.

References.

8 Additives and Crystallization Processes in Industries.

8.1 Pharmaceutical Industry.

8.2 Petroleum Industry.

8.3 Food Industry.

References.

9 Incorporation of Impurities in Crystals.

9.1 Types of Impurity Incorporation and the Segregation Coefficient.

9.2 Equilibrium Segregation Coefficient.

9.3 Effective Segregation Coefficient.

9.4 Relationship Between Effective Segregation Coefficient and Face Growth Rate.

9.5 Threshold Supersaturation for Trapping of Impurities During Growth.

9.6 Effective Segregation Coefficient and Internal Stresses Caused by Impurities.

References.

List of Symbols.

Subject Index.

Author Index.


Professor Keshra Sangwal is Senior Professor of Physics (since 1997) and Head of the Department of Applied Physics and Lublin University of Technology, Poland. He is author or co-author of over 160 publications in the field of elementary processes of growth and dissolution, real structure of crystals, structure and properties of electrolyte solutions, and mechanical properties of crystalline solids, including three books (see Author's Previous Works).

He has served as Guest Editor of several issues of Crystal Research and Technology and is a member of the advisory boards of 'Crystal Research and Technology' (Wiley-VCH),' Journal of Optoelectronics and Advanced Materials', and the 'Indian Journal of Engineering and Materials Science'. He is a member of the Polish Physical Society, Polish Society of Crystal Growth and the Crystallography Committee of the Polish Academy of Sciences. He is a co-founder of the Polish Society of Crystal Growth and served as its President from 1998 - 2001. He has worked as a visiting scientists in the Instituto de Ciencia de Materiales de Barcelona, a UNDP specialist in Anna University (India), and a visiting professor at the University of Barcelona, and Hiroshima University.



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