E-Book, Englisch, 396 Seiten, eBook
Reihe: Topics in Applied Physics
E-Book, Englisch, 396 Seiten, eBook
Reihe: Topics in Applied Physics
ISBN: 978-94-007-5863-6
Verlag: Springer Netherland
Format: PDF
Kopierschutz: Wasserzeichen (»Systemvoraussetzungen)
Zielgruppe
Research
Autoren/Hrsg.
Weitere Infos & Material
1: Introduction Part A. Progress and prospect of growth of wide-band-gap III-nitrides;
Hiroshi Amano
.- 2: Introduction Part B. Ultra-efficient solid-state lighting: likely characteristics, economic benefits, technological approaches;
Jeff Y. Tsao
,
et al
.- 3: Epitaxy Part A. LEDs Based on Heteroepitaxial GaN on Si Substrates;
Takashi Egawa andOsamu Oda
.- 4: Epitaxy Part B. Epitaxial Growth of GaN on Patterned Sapphire Substrates;
Kazuyuki Tadatomo.-
5: Growth and optical properties of GaN-based non- and semipolar LEDs;
Michael Kneisslet al
.- 6: Active region Part A. Internal Quantum Efficiency in Light Emitting Diodes;
Elison Matioli and Claude Weisbuch
.- 7: Active region Part B. Internal Quantum Efficiency;
Jong-In Shim.-
8: Electrical properties, reliability issues, and ESD robustness of InGaN-based LEDs;
Matteo Meneghini, et al
.- 9: Light extraction efficiency Part A. Ray Tracing for Light Extraction Efficiency (LEE) Modeling in Nitride LEDs;
C. Lalau Keraly,et al
.- 10: Light extraction efficiency Part B. Light Extraction of High Efficient Light-Emitting Diodes;
Ja-Yeon Kim, et al
.- 11: Packaging. Phosphors and white LED packaging;
Rong-Jun Xieand Naoto Hirosaki.-
12: High voltage LED;
Wen-Yung Yeh, et al
.- 13: Color Quality of White LEDs;
Yoshi Ohno.-
14: Emerging System Level Applications for LED Technology;
Robert F. Karlicek, Jr.