Buch, Englisch, 124 Seiten, Previously published in hardcover, Format (B × H): 155 mm x 235 mm, Gewicht: 224 g
Reihe: Springer Theses
Buch, Englisch, 124 Seiten, Previously published in hardcover, Format (B × H): 155 mm x 235 mm, Gewicht: 224 g
Reihe: Springer Theses
ISBN: 978-981-13-5123-5
Verlag: Springer Nature Singapore
This book introduces a novel Ti-Sb-Te alloy for high-speed and low-power phase-change memory applications, which demonstrates a phase-change mechanism that differs significantly from that of conventional Ge2Sb2Te5 and yields favorable overall performance. Systematic methods, combined with better material characteristics, are used to optimize the material components and device performance. Subsequently, a phase-change memory chip based on the optimized component is successfully fabricated using 40-nm complementary metal-oxide semiconductor technology, which offers a number of advantages in many embedded applications.
Zielgruppe
Research
Autoren/Hrsg.
Fachgebiete
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Elektronische Baugruppen, Elektronische Materialien
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise
- Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
Weitere Infos & Material
Acknowledge.- Abstract.- Introduction.- Component Optimization of Sb-Te in Ti-Sb-Te Phase Change Materials.- Component Optimization of Ti in Ti-SbTe Phase Change Materials.- Optimization Component TiSbTe.- Influence of Temperature on Performance of TiSbTeBased Device.- Phase Change Mechanism of TiSbTeAlloy.- TiSbTeBased Phase Change Memory Chip.- Summary.- References.- Published Papers and Patents.- Bibliography.