E-Book, Englisch, 430 Seiten
Arora Nanoelectronics
1. Auflage 2015
ISBN: 978-1-4987-0576-9
Verlag: CRC Press
Format: PDF
Kopierschutz: Adobe DRM (»Systemvoraussetzungen)
Quantum Engineering of Low-Dimensional Nanoensembles
E-Book, Englisch, 430 Seiten
ISBN: 978-1-4987-0576-9
Verlag: CRC Press
Format: PDF
Kopierschutz: Adobe DRM (»Systemvoraussetzungen)
Brings the Band Structure of Carbon-Based Devices into the Limelight
A shift to carbon is positioning biology as a process of synthesis in mainstream engineering. Silicon is quickly being replaced with carbon-based electronics, devices are being reduced down to nanometer scale, and further potential applications are being considered. While traditionally, engineers are trained by way of physics, chemistry, and mathematics, Nanoelectronics: Quantum Engineering of Low-Dimensional Nanoensembles establishes biology as an essential basic science for engineers to explore.
Unifies Science and Engineering: from Quantum Physics to Nanoengineering
Drawing heavily on published papers by the author, this research-driven text offers a complete review of nanoelectronic transport starting from quantum waves, to ohmic and ballistic conduction, and saturation-limited extreme nonequilibrium conditions. In addition, it highlights a new paradigm using non-equilibrium Arora’s Distribution Function (NEADF) and establishes this function as the starting point (from band theory to equilibrium to extreme nonequilibrium carrier statistics). The author focuses on nano-electronic device design and development, including carbon-based devices, and provides you with a vantage point for the global outlook on the future of nanoelectronics devices and ULSI.
Encompassing ten chapters, this illuminating text:
- Converts the electric-field response of drift velocity into current–voltage relationships that are driven by the presence of critical voltage and saturation current arising from the unidirectional drift of carriers
- Applies the effect of these scaled-down dimensions to nano-MOSFET (metal–oxide–semiconductor field-effect transistor)
- Considers specialized applications that can be tried through a number of suggested projects that are all feasible with MATLAB® codes
Nanoelectronics: Quantum Engineering of Low-Dimensional Nanoensembles contains the latest research in nanoelectronics, identifies problems and other factors to consider when it comes to nanolayer design and application, and ponders future trends.
Zielgruppe
Undergraduate/advanced undergraduate students in nanotechnology/nanoelectronics, electrical/electronics engineering, applied physics/physics, as well as researchers interested in device physics, nanoscale modeling.
Autoren/Hrsg.
Weitere Infos & Material
Nanoengineering Overview
Quantum Waves
Nanoengineering Circuits
Bioapplications
Growth and Decay
Scope
Examples
Problems
CAD/CAE Projects
References
Atoms, Bands, and Quantum Wells
Birth of a Quantum Era
Hydrogen-Like Atom
Photon Emission and Absorption
Spherical Hydrogen-Like Atom
Atoms to Crystals—Bands and Bonds
Thermal Band/Bond Tempering
Impurity Band/Bond Tempering
Compound Semiconductors
Bands to Quantum Wells
A Prototype Quantum Well
D (Bulk) Density of States
D Quantum Well
D Quantum Well
Quantum Dots: QOD Systems
Generalized DOS
Ellipsoidal Conduction Band Valleys
Heavy/Light Holes
Electrons in a Magnetic Field
Triangular Quantum Well
QD Electrons in a MOSFET
Carbon Allotropes
Graphene to CNT
Bandgap Engineering of Carbon Allotropes
Tunneling through a Barrier
WKB Approximation
Examples
Problems
CAD/CAE Projects
Appendix A: Derivation of the Density of States Using d-Function
References
Carrier Statistics
Fermi–Dirac Distribution Function
Bulk (D) Carrier Distribution
Bulk (D) ND Approximation
Intrinsic Carrier Concentration
Charge Neutrality Compensation
Strong D (Bulk) Degenerate Limit
Carrier Statistics in Low Dimensions
The Velocity and the Energy Averages
Graphene/CNT Nanostructures
Examples
Problems
CAD/CAE Projects
Appendix A: Distribution Function
Appendix B: Electron Concentration for D and D Nanostructures
Appendix C: Intrinsic Velocity
References
Nonequilibrium Carrier Statistics and Transport
Tilted Band Diagram in an Electric Field
Velocity Response to an Electric Field
Ballistic Mobility
Quantum Emission
High-Field Distribution Function
ND Drift Response
Degenerate Drift Response
Direct and Differential Mobility
Bandgap Narrowing and Carrier Multiplication
Examples
Problems
CAD/CAE Projects
Appendix A: Derivation of Velocity-Field Characteristics
References
Charge Transport
Primer
Ohmic (Linear) Transport
Discovery of Sat Law
Charge Transport in D and D Resistors
Charge Transport in a CNT
Power Consumption
Transit Time Delay
RC Time Delay
L/R Transient Delay
Voltage and Current Division
Examples
Problems
CAD/CAE Projects
Appendix A: Derivation of the L/R Time Constant
References
Nano-MOSFET and Nano-CMOS
Primer
MOS Capacitor
I–V Characteristics of Nano-MOSFET
Long- (LC) and Short-Channel (SC) MOSFET
Model Refinements for Nano-CMOS Application
CMOS Design
Examples
Problems
CAD/CAE Projects
Appendix A: Properties of Airy Function
References
Nanowire Transport
Primer
Ballistic Quantum Conductance
Quantum Emission
Stochastic to Streamlined Unidirectional Velocity
NEADF Application to NW
NW Transistor
CAD/CAE Projects
References
Quantum Transport in Carbon-Based Devices
High-Field Graphene Transport
Application to Experimental Data for Graphene
High-Field Transport in Metallic CNT
High-Field GNR Transport
Ballistic Transport in Graphene, CNT, and GNR
CAD/CAE Projects
References
Magneto- and Quantum-Confined Transport
Classical Theory of MR
Rationale for Density Matrix
Density Matrix
Magnetoresistance
An Application
Other Types of MR
NW Effect in High Electric and Magnetic Fields
Quantum-Confined Transport
CAD/CAE Projects
References
Drift-Diffusion and Multivalley Transport
Primer
Simplified Drift-Diffusion
Einstein Ratio
A Refined Model
Multivalley Transport
CAD/CAE Projects
References
Appendices
Index