Fisher / Ltd Defects and Diffusion in Semiconductors V
Erscheinungsjahr 2002
ISBN: 978-3-0357-0715-1
Verlag: Trans Tech Publications
Format: PDF
Kopierschutz: 0 - No protection
E-Book, Englisch, 458 Seiten
ISBN: 978-3-0357-0715-1
Verlag: Trans Tech Publications
Format: PDF
Kopierschutz: 0 - No protection
This fifth volume in the series covering the latest results in the field includes abstracts of papers which appeared within the approximate period of mid-2001 to mid-2002. The scope of this coverage again includes, in addition to traditional semiconductors, the increasingly important carbide, nitride and silicide semiconductors. Semiconducting oxides are not covered, as information on these can be found in the "Defects and Diffusion in Ceramics" series. However, the invited papers this time deal exclusively with staple semiconducting materials: including work on interstitial clusters, intrinsic point defects, and {113} defects in silicon; defect states in InAs quantum dots and defect generation at ZnSe/GaAs interfaces. There are also papers treating a wide range of general themes: such as tracer diffusion in a concentrated lattice gas, defect luminescence in layered chalcogenide semiconductors, defect formation after laser thermal processing, redistribution of point defects in an inhomogeneous temperature field, and very general mathematical techniques for determining basic diffusion parameters.
Autoren/Hrsg.
Fachgebiete
Weitere Infos & Material
Metastablility of Interstitial Clusters in Ion-Damaged Silicon Studied by Isothermal Capacitance Transient Spectroscopy
Optimization of Off-Oriented Ge Substrates for MOVPE-Grown GaAs Solar Cells
On the Role of Bulk Recombination of Intrinsic Point Defects in Si and their Interaction with the Surface in the Course of {113} Defect Growth: a Kinetic Study by in situ HVEM Irradiation
Cavity Formation in Helium-Implanted Silicon - Temperature Dependence
Shear Moduli of Silicon and Germanium in Semiconducting and Metallic Phases
Tracer Diffusion in the Concentrated Lattice Gas with Self-Excitation
Defect Luminescence in Some Layered Binary Chalcogenide Semiconductors
Teh Effect of Boron Concentration upon Defect Formation after Laser Thermal Processing using Molecular Dynamics
Defect States in InAs Quantum Dots Characterized by Photo-Induced Current Transient Spectroscopy
Redistribution of Point Defects in the Crystalline Lattice of a Semiconductor in an Inhomogeneous Temperature Field
Monte Carlo Theoretical Study of Defect Generation at Heterovalent ZnSe/GaAs Epitaxial Interfaces
A Simple Method for Determining the Bascie Diffusion Parameters of Dopants using an Analytical Form of the Concentration Profile
An Exact Formula for the Effective Diffusion Coefficient of Dopants in Semiconductors
