Görlich September 16

Nachdruck 2021
ISBN: 978-3-11-247964-3
Verlag: De Gruyter
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Deutsch, Band Volume 115, Number 1, 740 Seiten

Reihe: Physica status solidi / A.

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Zielgruppe

College/higher education;

Autoren/Hrsg.

Görlich

Fachgebiete

• Naturwissenschaften Physik Physik Allgemein

Inhaltsverzeichnis

Frontmatter -- Author Index -- Contents -- Reyiew Article -- Photoelectric Anisotropy of II IV-V2 Ternary Semiconductors -- Original Papers -- The Many Beam Dynamical Theory of Contrast in Electron Microscope Images of Microtwins for the Non-Symmetrical Laue and Non-Column Cases -- Optimisation of the Fourier Components of Potential in Bloch Wave TEM Image Contrast Calculations -- RF Plasma Modification of Heavily Destroyed Ion Implanted Subsurface Silicon Layers -- Electrical Properties of Superionic Silver-Bora te Glasses Doped with Agl -- Substitutional Defects in Sb2Te3 Crystals -- Simulated Quenching of Silicon WSR Monochromators Using WSR Section Topography -- Structural Phase Transition in the Perovskite-Type Layer Compound (C3H7NH3),PbCl4 -- Mechanical Model of the Bamboo Boundary Internal Friction Peak -- Steady-State Creep and Strain Transients for Stress Change Tests in an Al-0.5 w t% Zn Solid Solution Alloy -- Stoichiometric Annealing and Electrical Properties of Hgo.3Cdo.2Te Grown by Solid State Recrystallization -- Application of Thermal Conductivity Measurement by the Relaxation Method to Crystallization Kinetics of Glassy As2Se3 + 1 mol% In -- Structural Phase Transitions of Layer Compounds KFeF4, KTiF4, and KVF4 -- (CuIn)x(AgIn)!(Mn2ZTe2 Alloys: T(z) Phase Diagram and Optical Energy Gap Values -- X-Ray Diffraction and Conductivity Investigations of Lanthanum-Doped Barium Titanate Ceramics -- Determination of the Band Discontinuities of GaSb(n)-Ga0 83Al0.17Sb(p) Heterojunction by Capacitance-Voltage Measurements -- Influence of Annealing Regimes on Phase Transitions in Nitrogen and Carbon Ion Implanted Molybdenum -- Dependence of the Temperature Coefficient of the Strain Coefficients of Resistance of Double-Layer Thin Metallic Films on Thermal Strains -- Characterization of Dielectric Films and Damage Threshold at 1.064 ¡xm -- Investigation of the Structure and Properties of KCl-NaCl Crystals at Elevated Temperatures -- Changes in Structure and Properties of NltaOs Anodic Films Caused by Generating Anion Defects on Their Surface -- Reliability of Tantalum Oxide Film Capacitors -- A Study of UV/Ozone Cleaning Procedure for Silicon Surfaces -- Preparation and Faraday Rotation Spectra of YIG:Pb, Pt Garnet Films -- Structural and Electronic Properties of Evaporated Thin Films of Cadmium Telluride -- ESR Investigation of the Oxygen Vacancy in Pure and Bi203-Doped ZnO Ceramics -- Determination of the Germanium Acceptor Ionisation Energy of ALGai-^As (0 ^ * ^ 0.40) by Hall Effect and Luminescence -- Peculiarities of Galvanomagnetic and Thermoelectric Properties of YBaa-JLaxCuaO?-,' Solid Solutions -- Multi-Gap Model for Tunneling in High-Tc Superconductors -- Columnar Structure and Texture [001] in Co-Ni-W Films -- Bit Analysis of Magnetic Recording Media by Force Microscopy -- Deep Trapping of Injected Carriers in Ferroelectric Polymer -- Dielectric Properties of TbAs04 Single Crystals -- Dielectric Relaxation in Glassy Se and Sei'0_'Te* Alloys2) -- Optical Properties of Uranium in Potassium Alumino-Phosphate Glasses -- Defect Annealing in Pure Cdr2 Crystals -- Mécanismes de thermoluminescence dans des fluorines CaF2 naturelles et de synthèse -- Short Notes