Silicon Nanowire Transistors

Softcover Nachdruck of the original 1. Auflage 2016
ISBN: 978-3-319-80085-1
Verlag: Springer International Publishing

Buch, Englisch, 165 Seiten, Previously published in hardcover, Format (B × H): 155 mm x 235 mm, Gewicht: 283 g

This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI.

Zielgruppe

Research

Autoren/Hrsg.

Hamedi-Hagh, Sotoudeh

Bindal, Ahmet

Fachgebiete

• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Biomaterialien, Nanomaterialien, Kohlenstoff
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Transistoren
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik

Inhaltsverzeichnis

Dual Work Function Silicon Nanowire MOS Transistors.- Single Work Function Silicon Nanowire MOS Transistors.- Spice Modeling For Analog and Digital Applications.- High-Speed Analog Applications.- Radio Frequency (RF) Applications.- SRAM Mega Cell Design for Digital Applications.- Field-Programmable-Gate-Array (FPGA).- Integrate-And-Fire Spiking (IFS) Neuron.- Direct Sequence Spread Spectrum (DSSS) Base-Band Transmitter.-

Über Autor(innen)

Ahmet Bindal received his M.S. and Ph.D. degrees in
Electrical Engineering Department from the University of California, Los
Angeles CA. His doctoral research was the material characterization and
analysis of HEMT GaAs transistors. During his graduate studies, he was a
research associate and technical consultant for Hughes Aircraft Co. In 1988, he
joined the technical staff of IBM Research and Development Center in Fishkill,
NY, where he worked as a device design and characterization engineer. He
developed asymmetrical MOS transistors and ultra thin Silicon-On-Insulator (SOI)
technologies for IBM. In 1993, he transferred to IBM in Rochester, MN, as a
senior circuit design engineer to work on the floating-point unit for AS-400
main frame processor. He continued his circuit design career at Intel
Corporation in Santa Clara, CA, where he designed 16-bit packed multipliers and
adders for the MMX unit for Pentium II processors. In 1996, he joined Philips
Semiconductors in Sunnyvale, CA, where he was involved in the designs of
instruction and data caches, and various SRAM modules for the Trimedia
processor. His involvement with VLSI architecture also started in Philips
Semiconductors and led to the design of the Video-Out unit for the same
processor. In 1998, he joined Cadence Design Systems as a VLSI architect and
directed a team of engineers to design self-timed asynchronous processors.
After approximately 20 years of industry work, he joined the Computer
Engineering faculty at San Jose State University in 2002. His current research
interests range from nano-scale electron devices to nano-scale architectures
and robotics. Dr. Bindal has over 30 refereed scientific publications and 10
invention disclosures with IBM. He currently holds three U.S. patents with IBM
and one with Intel Corporation.
Dr. Hamedi-Hagh received his Ph.D. from the University
of Toronto, Canada in 2004. He joined the Electrical Engineering Department at
San Jose State University (SJSU) in 2005. His areas of research and expertise include
high frequency modeling of semiconductor device structures and design of Radio
Frequency, Analog and Mixed-Signal integrated circuits for wireless and
wireline communication systems. Dr. Hamedi-Hagh has developed the Radio Frequency
Integrated Circuits laboratory and curriculum at both graduate and undergraduate
levels with over $0.5M research funding and through close collaborations with industries.
He has received several California State University (CSU) professional development
grants, CSU Research Funds, Research, Scholarship and Creative Activity (RSCA)
grants, SJSU Planning Council Grants, College of Engineering professional
development grants and Junior Faculty Career Development Grants. He is a
founding member of SJSU Smart Technology and Computing Center for Complex
Systems (STCCS). In 2016, he was appointed as the Mixed-Signal endowed chair of
the Electrical Engineering department. Dr. Hamedi-Hagh has over 30 refereed
scientific journal and conference paper publications in prestigious national
and international Institutes and societies. He received the best paper award at
the Micronet Symposium in Quebec, Canada in 2001 and the IEEE International
Symposium on Personal, Indoor and Mobile Radio Communications in Barcelona,
Spain in 2004. Dr. Hamedi-Hagh has advised several hundred projects on design
of integrated circuits and systems. He holds seven US and world patents on wireless
circuits, systems and cryptography. His latest patent introduces suspendance®
and trajectance® laws as alternatives to Kirchhoff’s laws for
circuit analysis.