O'Donnell / Dierolf Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications
1. Auflage 2010
ISBN: 978-90-481-2877-8
Verlag: Springer Netherland
Format: PDF
Kopierschutz: 1 - PDF Watermark
E-Book, Englisch, Band 124, 355 Seiten, eBook
Reihe: Topics in Applied Physics
ISBN: 978-90-481-2877-8
Verlag: Springer Netherland
Format: PDF
Kopierschutz: 1 - PDF Watermark
This book summarises recent progress in the science and technology of rare-earth doped nitrides, providing a snapshot of the field at a critical point in its development. It is the first book on rare-earth doped III-Nitrides and semiconductors.
Zielgruppe
Research
Autoren/Hrsg.
Weitere Infos & Material
Theoretical Modelling of Rare Earth Dopants in GaN.- RE Implantation and Annealing of III-Nitrides.- Lattice Location of RE Impurities in IIINitrides.- Electroluminescent Devices Using RE-Doped III-Nitrides.- Er-Doped GaN and InxGa1-xN for Optical Communications.- Rare-Earth-Doped GaN Quantum Dot.- Visible Luminescent RE-doped GaN, AlGaN and AlInN.- Combined Excitation Emission Spectroscopy (CEES) of RE Ions in Gallium Nitride.- Excitation Mechanisms of RE Ions in Semiconductors.- High-Temperature Ferromagnetism in the Super-Dilute Magnetic Semiconductor GaN:Gd.- Summary and Prospects for Future Work.
