Buch, Englisch, 220 Seiten, Paperback, Format (B × H): 148 mm x 210 mm, Gewicht: 342 g
Buch, Englisch, 220 Seiten, Paperback, Format (B × H): 148 mm x 210 mm, Gewicht: 342 g
ISBN: 978-3-95908-028-6
Verlag: TUDpress Verlag der Wissenschaften GmbH
New compact model equations for the transfer current were derived and successfully applied to a large set of different technologies. Hereby, the ”Generalized Integral Charge Control Relation‘‘ was used as a foundation. A physics-based model utilizing small-signal parameters obtained from measurements is derived for modeling the current dependent collector charge. A brief chapter about substrate effects in bipolar transistors comprises the derivation of a compact model for the bias-dependent substrate resistance as well as a proper partitioning of the substrate capacitance.
New extraction methods for compact model parameters are introduced and the application of existing methods to advanced processes is discussed. The derived model equations were applied to a very advanced SiGe HBT process developed by IHP. Highly accurate models for DCand small-signal as well as for large-signal characteristics are presented. The derived model equations were applied to a selected very advanced SiGe HBT process developed by IHP. Highly accurate models for DC and small-signal as well as for large-signal characteristics are presented.